Q6025R5 ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors Q6025R5
DESCRIPTION
- WithTO-220 packaging
- Operatingin 3quadrants
- Highcommutationcapability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Solid staterelays;heating and cooking appliances
- Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peakoff-state voltage 600 V VRRM Repetitive peakreverse voltage 600 V IT(RSM) Average on-statecurrent @Tc=110℃ 25 A ITSM Surge non-repetitiveon-state current 50HZ 60HZ 167 200 A PG(AV) Average gatepower dissipation (overany 20 msperiod ) 0.5 W Tj Operating junctiontemperature -40~150 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakreverse current VR=VRRM Rated; VD=VDRM Rated; Tj=25℃ Tj=100℃ Tj=125℃ 0.1 1.0 3.0 mA IDRM Repetitive peakoff-state current VTM On-state voltage IT=25A 1.8 V IGT Gate-triggercurrent VD =12V;RG=330Ω; RL=6Ω Ⅰ 50 mAⅡ 50 Ⅲ 50 VGT Gate-triggervoltage VD =12V;RG=330Ω;RL=6Ω 2.5 V Rth (j-c) Junctiontocase Halfcycle 0.89 ℃/W