Q6016RH4TP ISC | Alldatasheet
Document overview
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Technical content
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FEATURES
- Nocontactstowearout fromreaction ofswitchingevents
- Restricted(orlimited) RFIgeneration,dependingon activation point insinewave
- Requiresonly asmall gateactivation pulse ineachhalf-cycle
APPLICATIONS
- Internallyconstructed isolatedpackages areofferedforease ofheat sinking with highestisolationvoltage.
- AlternistorTriacs (nosnubberrequired)are usedin applications with extremely inductiveloads requiring highestcommutationperformance. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDRM RepetitivePeakOff-stateVoltage 600 V VRRM RepetitivePeakOff-stateVoltage 600 V IT(RMS) NonRepetitiveSurgePeakOn-stateCurrent(TC =90°C) 16 A ITSM Non-repetitivePeakOn-stateCurrent f=50Hz,t=20ms 167 A f=60Hz,t=16.7ms 200 I2t I2tValueforFusing tp=8.3ms 166 A2S PG(AV) AverageGatePowerDissipation 0.5 W TJ OperatingJunctionTemperature -40~125 ℃ Tstg StorageTemperature -40~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.7 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MAX UNIT IDRM IRRM Repetitivepeakoff-statecurrent VD=VDRM,TJ=25℃ 5 uA IGT Gatetriggercurrent VD=12V,RL =60Ω mAⅡ 35 Ⅲ 35 VGT Gatetriggervoltageallquadrant VD=12V,RL =60Ω 1.3 V VTM On-statevoltage IT=22.6A,tp=380μs 1.6 V PACKAGEOUTLINE Dimensionsinmm
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