Q6016NH4 ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors Q6016NH4
DESCRIPTION
- WithTO-263(D2PAK)packaging
- Operatingin 3quadrants
- Highcommutationcapability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications
- Phasecontrol
- Staticswitchingon inductiveorresistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitivepeak off-state voltage 600 V VRRM Repetitivepeak reversevoltage 600 V IT(RSM) Averageon-state current 16 A ITSM Surge non-repetitiveon-state current 50HZ 60HZ 200 167 A PG(AV) Averagegate power dissipation(overany 20msperiod ) 0.5 W Tj Operatingjunction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakreverse current VR=VRRM Rated; VD=VDRM Rated; Tj=25℃ Tj=100℃ Tj=125℃ 0.05 0.5 mA IDRM Repetitive peakoff-state current VTM On-state voltage IT=12A 2.0 V IGT Gate-triggercurrent VD =12V;RL=20Ω Ⅰ 35 mAⅡ 35 Ⅲ 35 VGT Gate-triggervoltage VD =12V;RL=20Ω 1.5 V Rth (j-mb) Junctiontomounting base Halfcycle 1.2 ℃/W