Q6012LH2 LITTELFUSE | Alldatasheet

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Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.

12 Amp Alternistor (High Communitation) Triacs

Description

12 Amp bi-directional solid state switch series is designed

for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Alternistor type devices only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability.Main Features Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 400 to 1000 V IGT (Q1) 10 to 50 mA Features & Benefits

  • RoHS Compliant
  • Glass – passivated junctions
  • Voltage capability up to 1000 V
  • Surge capability up to 120 A
  • Electrically isolated “L-Package” is UL recognized for 2500Vrms
  • Solid-state switching eliminates arcing or contact bounce that create voltage transients
  • No contacts to wear out from reaction of switching events
  • Restricted (or limited) RFI generation, depending on activation point sine wave
  • Requires only a small gate activation pulse in each half-cycle Schematic Symbol

Applications

Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are AC solid-state switches, light dimmers, power tools, lawn care equipment, home/brown goods and white goods appliances. Alternistor Triacs (no snubber required) are used in applications with extremely inductive loads requiring highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. MT2 MT1 G Agency Approval Agency Agency File Number ® L Package: E71639

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor T riac (3 Quadrants) Symbol Test Conditions Quadrant Qxx12xH2 Qxx12xH5 Unit IGT VD = 12V RL = 60 Ω I – II – III MAX. 10 50 mA VGT I – II – III MAX. 1. 3 1. 3 V VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C I – II – III MIN. 0.2 0.2 V IH IT = 100mA MAX. 15 50 mA dv/dt VD = VDRM Gate Open TJ = 125°C 400V MIN. 300 750 V/μs 600V 200 650 800V 150 500 VD = VDRM Gate Open TJ = 100°C 1000V 150 300 (dv/dt)c (di/dt)c = 6.5 A/ms TJ = 125°C MIN. 2 30 V/μs tgt IG = 2 x IGT PW = 15μs IT = 17 .0 A(pk) TYP . 4 4 μs Absolute Maximum Ratings — Alternistor (3 Quadrants) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Qxx12LHy TC = 90°C

12 AQxx12RHy

Qxx12NHy TC = 105°C ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hz t = 20 ms 110 A f = 60 Hz t = 16.7 ms 120 I2t I2t Value for fusing tp = 8.3 ms 60 A2s di/dt Critical rate of rise of on-state current f = 120 Hz TJ = 125°C 70 A/μs IGTM Peak gate trigger current tp ≤ 10 μs; IGT ≤ IGTM TJ = 125°C 2.0 A PG(AV) Average gate power dissipation TJ = 125°C 0.5 W Tstg Storage temperature range -40 to 150 °C TJ Operating junction temperature range -40 to 125 °C Note: xx = voltage, y = sensitivity Static Characteristics Symbol Test Conditions Value Unit VTM ITM = 17 .0A tp = 380 µs MAX. 1 .60 V IDRM IRRM VD = VDRM / VRRM TJ = 25°C 400-1000V MAX. 10 μA TJ = 125°C 400-800V 2 mA TJ = 100°C 1000V 3 Thermal Resistances Symbol Parameter Value Unit Rθ(J-C) Junction to case (AC) Qxx12RHy Qxx12NHy 1. 2 °C/W Qxx12LHy 2.3 Rθ(J-A) Junction to ambient (AC) Qxx12RHy 45 °C/WQxx12LHy 90 Note: xx = voltage, y = sensitivity

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Figure 2: Normalized DC Gate T rigger Current for All Quadrants vs. Junction T emperature 0.0 1.0 2.0 3.0 4.0 Junction Temperature (TJ) - C Ratio of IGT / IGT (TJ = 25 ºC) -65 -40 -15 10 35 60 85 110 125 Figure 1: Definition of Quadrants Note: Alternistors will not operate in QIV MT2 POSITIVE (Positive Half Cycle) MT2 NEGATIVE (Negative Half Cycle) MT1 MT2 + I GT REF QII MT1 I GT GATE MT2 REF MT1 MT2 REF MT1 MT2 REF QI QIV QIII ALL POLARITIES ARE REFERENCED TO MT1 (-) I GT GATE (+) I GT - I GT GATE (-) I GT GATE (+) Figure 3: Normalized DC Holding Current vs. Junction T emperature +1250.0 1.0 2.0 3.0 4.0 -65 -40 -15 10 35 60 85 110 Junction Temperature (TJ) - ºC Ratio of IH / IH (TJ = 25ºC) Figure 4: Normalized DC Gate T rigger Voltage for All Quadrants vs. Junction T emperature +1250.0 0.5 1.0 1.5 2.0 -65 -40 -15 10 35 60 85 110 Junction Temperature (T J) - ºC Ratio of V GT / VGT(TJ = 25ºC) 02 46 81 01 21 4 RMS On-State Current [IT(RMS)] -- Amps Average On-State Power Dissipation [PD(AV)] -- Watts CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360° Figure 5: Power Dissipation (T ypical) vs. RMS On-State Current Figure 6: Maximum Allowable Case T emperature vs. On-State Current 100 110 120 130 0 246 81 01 21 4 RMS On-State Current [IT(RMS)] - Amps Maximum Allowable Case Temperature (TC) - °C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360° Qxx12RH5 Qxx12NH5 Qxx12LH5

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Figure 8: On-State Current vs. On-State Voltage (T ypical) Positive or Negative Instantaneous On-State Voltage (VT) - Volts Positive or Negative Instantaneous On-State Current (IT) - AMPS TC = 25ºC Figure 7: Maximum Allowable Ambient T emperature vs. On-State Current 100 110 120 RMS On-State Current [IT(RMS)] - AMPS Max Allowable Ambient Temperature (TA) - ºC CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING - No HEAT SINK Qxx12LH5 Qxx12RH5 100 1000 1000101 Surge Current Duration - Full Cycles Peak Surge (Non-Repetitive On-State Current (ITSM) - AMPS 100 Figure 9: Surge Peak On-State Current vs. Number of Cycles Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [I T(RMS) : Maximum] Rated Value at Specific Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value.

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Time (min to max) (ts) 60 – 150 seconds Peak Temperature (TP) 260+0/5°C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Environmental Specifications Test Specifications and Conditions AC Blocking MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours T emperature Cycling MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell time T emperature/ Humidity EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity High T emp Storage MIL-STD-750, M-1031, 1008 hours; 150°C Low-T emp Storage 1008 hours; -40°C Thermal Shock MIL-STD-750, M-1056 10 cycles; 0°C to 100°C; 5-min dwell time at each temperature; 10 sec (max) transfer time between temperature Autoclave EIA / JEDEC, JESD22-A102 168 hours (121°C at 2 ATMs) and 100% R/H Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E Physical Specifications T erminal Finish 100% Matte Tin-plated Body Material UL recognized epoxy meeting flammability classification 94V-0 T erminal Material Copper Alloy Design Considerations Careful selection of the correct device for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.67 2.92 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1 .52 1 .91 M 0.085 0.095 2.16 2.41 N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1 .14 1 .52 R 0.038 0.048 0.97 1 .22 Dimensions — TO-220AB (R-Package) — Non-Isolated Mounting T ab Common with Center Lead Dimensions — TO-220AB (L-Package) — Isolated Mounting T ab Dimension Inches Millimeters Min Max Min Max A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.67 2.92 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1 .52 1 .91 M 0.085 0.095 2.16 2.41 N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1 .14 1 .52 R 0.038 0.048 0.97 1 .22 K J A H G B F Ø E C D L R TC MEASURING POINT MT2 MT2 O P N M MT1 .276 7.01 .526 13.36 .320 8.13 GATE AREA (REF.) 0.17 IN2 NOTCH IN GATE LEAD TO ID. NON-ISOLATED TAB K J A H G B F Ø E C D L R TC MEASURING POINTA REA (REF.) 0.17 IN2 MT2 O P N M MT1 GATE .320 8.13 .526 13.36 .276 7.01 Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Voltage Gate Sensitivity Quadrants Type Package 400V 600V 800V 1000V I – II – III Qxx12LH2 X X X 10 mA Alternistor Triac TO-220L Qxx12RH2 X X X 10 mA Alternistor Triac TO-220R Qxx12NH2 X X X 10 mA Alternistor Triac TO-263 D²-PAK Qxx12LH5 X X X X 50 mA Alternistor Triac TO-220L Qxx12RH5 X X X X 50 mA Alternistor Triac TO-220R Qxx12NH5 X X X X 50 mA Alternistor Triac TO-263 D²-PAK Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx12L/RHy Qxx12L/RHy 2.2 g Bulk 500 Qxx12L/RHyTP Qxx12L/RHy 2.2 g Tube Pack 500 (50 per tube) Qxx12NHyTP Qxx12NHy 1 .6 g Tube 500 (50 per tube) Qxx12NHyRP Qxx12NHy 1 .6 g Embossed Carrier 500 Note: xx = Voltage; y = Sensitivity Dimension Inches Millimeters Min Max Min Max A 0.360 0.370 9.14 9.40 B 0.380 0.420 9.65 10.67 C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.64 0.89 E 0.045 0.060 1 .14 1 .52 F 0.060 0.075 1 .52 1 .91 G 0.095 0.105 2.41 2.67 H 0.092 0.102 2.34 2.59 J 0.018 0.024 0.46 0.61 K 0.090 0.110 2.29 2.79 S 0.590 0.625 14.99 15.88 V 0.035 0.045 0.89 1 .14 U 0.002 0.010 0.05 0.25 W 0.040 0.070 1 .02 1 .78 Dimensions — TO-263AB (N-Package) — D2Pak Surface Mount G B A W D F V S MT1 MT2 C E K H J U .320 8.13 .276 7.01 .331 8.41 GATE .460 .665 16.89 .260 6.60 .150 3.81 .080 2.03 .085 .055 1.40 .350 8.89 .276 7.01 AREA: 0.11 TC MEASURING POINT IN2 1168 2.16 7.01 .276

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Part Marking SystemPart Numbering System Q 60 12 L H5 56 DEVICE TYPE Q: Alternistor 40: 400V 60: 600V 80: 800V K0: 1000V 12: 12A H2: 10mA (QI, II, III) H5: 50mA (QI, II, III) L : TO-220 Isolated R : TO-220 Non-Isolated xx: Lead Form Option VOLTAGE RATING CURRENT RATING LEAD FORM DIMENSIONS SENSITIVITY & TYPE PACKAGE TYPE N : TO-263 (D2Pak) MY MY Q6012LH5 Q6012RH5 Gate MT1 MT2 0.512 (13.0) Arbor Hole Dia. 0.945 (24.0) 0.63 (16.0) 1.01 (25.7) 12.99 (330.0) 0.827 (21.0) 0.157 (4.0) Direction of Feed Dimensions are in inches (and millimeters). *Cover tape 0.059 DIA(1.5) TO-263 Embossed Carrier Reel Pack (RP) Meets all EIA-481-2 Standards