Q6008DH4 ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors Q6008DH4
DESCRIPTION
- WithTO-252(DPAK)uninsulated packaging
- Highcommutationcapability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications
- Phasecontrol
- Staticswitchingon inductiveorresistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitivepeak off-state voltage 600 V VRRM Repetitivepeak reversevoltage 600 V IT(RSM) Averageon-statecurrent 8 A ITSM Surgenon-repetitive on-statecurrent 60HZ 50HZ 80 A PG(AV) Averagegate powerdissipation 0.5 W Tj Operatingjunction temperature -40~125 ℃ Tstg Storagetemperature -40~125 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitivepeak reversecurrent VR=VRRM Rated; VD=VDRM Rated; Tj=25℃ Tj=100℃ Tj=125℃ 0.01 0.5 mAIDRM Repetitivepeak off-state current VTM On-state voltage IT=8A 1.6 V IGT Gate-triggercurrent VD =12V;IT=0.1A; Ⅰ 35 mAⅡ 35 Ⅲ 35 VGT Gate-triggervoltage VD =12V;IT=0.1A; 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.