Q4010L4TP ISC | Alldatasheet
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Technical content
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FEATURES
- WithTO-220 insulatedpackage
- Blocking Voltageto400 V
- UniformGateTriggerCurrents inThree Quadrants
- MinimizesSnubberNetworksforProtection ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM RepetitivePeakOff-stateVoltage 400 V VRRM RepetitivePeakOff-stateVoltage 400 V IT(RMS) NonRepetitiveSurgePeakOn-stateCurrent(fullcycle,TJ initial=25°C) 10 A ITSM Non-repetitivePeakOn-stateCurrent@f=50Hz,tp=20ms 100 A I2t I2tValueforFusing(t=8.3ms) 60 A2S PG(AV) AverageGatePowerDissipationTJ =125°C 0.5 W TJ OperatingJunctionTemperature 125 ℃ Tstg StorageTemperature -40~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.6 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitivepeakreversecurrent VR=VRRM,TJ=25℃ 10 uA IDRM Repetitivepeakoff-statecurrent VD=VDRM,TJ=25℃ 10 uA IGT Gatetriggercurrent VD=12V,RL =60Ω mA Ⅱ 25 Ⅲ 25 IV 50 IH Holdingcurrent IGT=200mA 35 mA VGT Gatetriggervoltageallquadrant VD=12V,RL =100Ω 1.3 V VTM On-statevoltage IT=14.1A 1.6 V PACKAGEOUTLINE Dimensionsinmm
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