Q2X8E3 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • RoHS Compliant * Electrically-isolated packages * Glass-passivated junctions * Voltage capability — up to 1000 V * Surge capability — up to 200 A Compak Package * Surface mount package — 0,8 A and 1 A series * New small profile three-leaded Compak package * Packaged in embossed carrier tape with 2,500 devices per reel * Can replace SOT-223 Triacs (0.8 A to 35 A) 'T(RMS) '.-».! MAX 0.8 A 1 A Part Number J I..U1 ! MI2 TO-92 MT1 TC Isoi MT2 -220 ited MTI^^J^ MT2 CompaK rjon -isolated my MT1 ° MT2 TO-202 MT2 MT2 TO-220 f.1TI TO-252 Q-PaK MT2 MT1 L* MT2 TO-251 V-PaK TO-263 D:PaK See "Package Dimensions" section for variations (11) Q2XBE3 Q4X8E3 Q6X8E3 Q2X8E4 Q4X8E4 Q6X8E4 Q201EO Q401E3 Q601E3 Q201E4 Q401E4 Q601E4 Q2004L3 Q4004L3 QB004L3 Q2004L4 Q4004L4 OS004L4 Q8004L4 QK004L4 Q2006L4 Q4006L4 Q6006L5 Q8006L5 QK006L5 Q2008L4 O4006L4 Q6008L5 Q8006L5 QK008L5 Q2X3 04X3 06X3 Q2X4 O4X4 Q6X4 Q2N3 Q4N3 Q6N3 Q2N4 Q4N4 Q6N4 Q2004F31 Q4004F31 Q6004F31 O2004F41 Q4004F41 Q6004F41 Q2006F41 Q4006F41 Q6006F51 Q2008F41 Q4008F41 QGOOBFS1 Q2006R4 Q4006R4 Q6006R5 Q8006R5 QK006R5 Q2008R4 O4008R4 Q6008R5 Q8008R5 QK008R5 Q2004D3 Q4004D3 O6004D3 Q2004D4 Q4004D4 Q6004D4 Q8004D4 QK004D4 Q2004V3 Q4004V3 Q6004V3 Q2004V4 Q4004V4 QS004V4 Q8004V4 QK004V4 Q2006N4 Q40C6N4 Q6006N5 Q8006NS QK006N5 Q2008N4 O4008N4 Q6008N5 Q8006N5 QK008N5 VDRM (1) Volts MIN 200 ^ 400 600 200 400 600 200 400 600 200 400 600 200 400 600 200 400 600 800 1000 I 200 400 600 800 1000 200 400 600 no 1000 IGT (3) (7)05 1 mAmps Ql | Qli am QIV MAX SO SO SO SO aiv TYP See 'General Notes^on page E2 - 4 and ''Electrical Specification Notes" on page E2 - 5 Semi-Conductor s

'DRM (i.H'S) mAmps T,- = 25 ':C T,- = io6'-c T,- = 125;C MAX 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 O.OS 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 O.OS 0.05 0.05 0.05 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 VTM (1 ) (5) Volts T- = 25 '-C MAX 1.6 1.6 1.8 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 VGT (2) (6) <15)(18) (19) Volts T,- - 25%C MAX 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 IH OM&) (12) mAmps MAX

  • GTM (14) Amps 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.6 1.6 1.6 1.6 1.6 1.8 1.8 1.8 1.8 1.8 PGM (14) Watts PG(AV) Watts 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 ~~l 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 'TSM 0) (13-) Amps 60/50 Hz 10/8.3 10/8.3 10/8.3 10/6.3 10/8.3 10/8.3 20/16.7 20/16.7 2W16.7 20/16.7 20/16.7 20/16.7 SO/65
  • 100/83 dv/dt(c) (1}(4)(1.3; VoltS'(JSec TYP dv/dt (1) Volts/asec T-- 100'-C Tr = 125 °C MIN 100 100 200

4 I 200

(10) pSec TYP 2.5 2.5 2.5 2.5 2.5 I 2.5 2.5 2.5 2.5 I2t Amp2Sec 041 041 0X1 041 041 1.6 1.6 1.6 1.6 1.6 1.6 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 26.5 26.5 26.5 26.5 26.5 di/dt Amps/pSec SO See "General Notes' on page E2 - 4 and "Electrical Specification Notes' on page E2 - 5

  • " i .' C i Volts T- = 25'C MAX 1,6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.8 1.8 1.8 1.8 1.8 1.4 1.4 1.5 1.6 VGT (2K6H-5! (1SM'91 Volts Tc = 25 °C MAX 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.75 2,75 2.75 2.75 ("J (8|(12: mAmps MAX 100 100 100 100 100 'GTM (14) Amps 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 PGM i.14l Watts PGIAVJ Watts 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 'TSM (sir 3) Amps 60/50 Hz 35W300 dv/dt(c| (')(4}f3; Voits/MSec TYP dv/dt ("•i Vcits/DSec TiTT-ir:

100 CC | 125 °C

M.IH 150 150 100 350 350 300 250 150 400 400 350 300 200 400 400 350 300 200 550 450 550 450 225 225 200 175 275 275 229 200 275 275 225 200 475 400 475 400 «gt (10) (17) uSec TYP A Amps' Sec 166 166 166 166 166 166 166 166 166 166 260 260 508 SOB di/dt Amps/uSec 100 100 100 100 100 100 100 100 100 100 100 100 100 100 Electrical Specification Notes (1 j For either polarity of MT2 with reference to MT1 terminal (2) For either polarity of gate voltage (VeTj with reference to MT1 terminal i3i See Gate Characteristics and Definition of Quadrants i,4j See Figure E2 1 through Figure E27 for current rating at specific operating temperature (5) See Figure E2 8 through Figure E2.10 for k versus v- ;6i See Figure E2 12 for Vc- versus Tc ;7i See Figure E2 11 for I6- versus Tc tSi See Figure E2 14 for IM versusT- (9t See Figure E2 13 for surge rating with specific durations (10i See Figure E2.15 for t3l versus IOT t'11 i See package outlines for lead form configurations When ordering special lead forming add type number as suffix to part number (12) Initial on-state current = 200 mAdcfor 0 8 A to10 A devices 400 mA dc for 15 A to 35 A devices (13) See Figure E2 1 through Figure E2 6 for maximum allowable case temperature at maximum rated current (14) Pulse width slOus, IOT£|(JTH (15) RL = 600 for 0 8 AtolO Atnacs, RL = 30 Q for 15 A to 35Atnacs (16) Tc = Tj for test conditions in off state (17) !(_,. = 300 mAfor 25 A and 35 A devices (18) Quadrants I, II. Ill only 09) Minimum non-trigger V^ at 125 :C is 0 2 Vfor all except 50 mA MAX QIV devices which are 02 V at 110 "C Gate Characteristics Teccor tnacs may be turned on between gate and MT1 terminals in the following ways:

  • In-phase signals (witn standard AC tine) using Quadrants I and III Application of unipolar pulses (gate always positive or nega- tive), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses However, due to higher gate requirements for Quadrant IV. it is recommended that only negative pulses be applied. If pos- itive pulses are required, see 'Sensitive Tnacs section of this catalog or contact the factory. Also, see Figure AN1002.8. 'Amplified Gate'1 Thynstor Circuit.

In all cases, if maximum surge capability is required pulses should be a minimum of one magnitude above IGT rating with a steep rising waveform (<1 us nse time) ALL POLARITIES ARE REFERENCED TO MT1 MT2 POSITIVE MT-, (Positive Half Cyc e) m ' - + M I z GATE _^f »MT1 REF I - Q" MT2 Ql" GATE J^ (t) o T ; GATE ,4_y f MT1 REF-i,T QIV CT MT2 GATE ^f

  • < »MT1 REF MT2 NEGATIVE REF (Negative Half Cycle) Definition of Quadrants Thermal Resistance (Steady State) RnJC PnJ/J (TYP.)rjfflW Package Code Type 0.8 A 1 A 6 A 10 A 15A 25 A 35 A P TO-3 Fastpak 1.6 1.5 E I I f TO -92 60 [135] 50 [95] c CompaK 60* 40" F B TO-202 Type 1 3.5 [45] 3.8 3.3 3,5 Jl TO-202 Type 2 epo] L TO-220 isolated 3.6 [50] 3.3 2.8 2.6 2.1 R TO-220 f Jon -isolated 1.8 [45] 1.6 1.3 1.1 0.89 D TO-252 D-PaK 3.5 V TO-251 V-Pak 6.0 [70] N TO-263 D2Pak 1.8 1.5 1.3 1.1 0.89 ' Mounted on 1 cm' copper foil surface two-ounce copper foil

'T(RMS) .:4H16) MAX 10A 15A 25 A 35 A Part Number isolated MM ,.MT2 Gate TO-3 FastpaK Q6025P5 Q802SP5 Q6036P5 Q8035P5 P MT1 I • • G MT2 TO-220 Non-isolated MT2 fi J ' MT1 ° MT2 TO-202 MT2 MT2 TO-220 MT1 TO-263 3'Pak See "Package Dimensions' section for variations (ii 1 Q2010L4 Q4010L4 O6010L4 Q8010L4 QK010L4 Q2010L5 O4010L5 Q6010L5 Q8010L5 QK010L5 Q2015L5 Q4015L5 0601 5L5 Q8015L5 QK015L5 Q2010F51 O4010F51

0601 OF51

0401 OR4

0801 OR4

0601 OR5

0801 ON4

0201 ON5

(1) Volts MIN 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 600 aoo $00 800 IGT (3) (7) (15) mAmps Qll am QIV MAX SO L_25_ SO QIV TYP 120 120 120 120 'ORM 0)06) mAmps T,- = Tr = 25" <C j 100°C Tc = 125 °C MAX 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0,09 0.05 0.1 0.1 0.1 0.1 0.1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Specific Test Conditions di/dt — Maximum rate-of-change of on-state current, 1^ = 200 mAwith <0 1 MS rise time dv/dt — Critical rate-of-rise of off-state voltage at rated VCRM gate open dvfdt(c) — Critical rate-of-rise of commutation voltage at rated VCRI,, and l-.pj,ie commutattng di'dt = 0.54 rated lT,RM5/ms, gate unenergzed I2t— RMS surge (non-repetitive} on-state current for period of 8 3 ms for fusing 'DRM — Peak off-state current gate open, VCRH = maximum rated value IGT — DC gate trigger current in specific operating quadrants, Vr = l2Vdc 'GTM — Peak gate trigger current IH — Holding current (DC) gate open 'TIRMSI — R'^s on-state current conduction angle of 360' ITSM — Peak one-cycle surge PG(AV) — Average gate power dissipation PGM — Peak gate power dissipation, \\- < ieTM tgt —Gate controlled turn-on time, \\- - 200 mAwith 0.1 MS rise time W)RM — Repetitive peak blocking vottage VGT — DC gate trigger voltage, Vc = 12 V dc; RL = 60 0 VTM — Peal<; on-state voltage at maximum rated RMS current General Notes All measuranents are made at 60 Hz with a resistrve load at an ambient temperature of +25 cC unless specified otherwise Operating temperature range (Tj) is -65 :C to +125 FJC for TO-92, -25 'C to +125 'C for Fastpak, and -40 r£ to +125 r£ for all other devices Storage temperature range {TEj is -65 CC to +150 CC for TO-92, -40 CCto +150 [C for TO-202, and -40 CC to+125 DC for alt other devices Lead solder temperature is a maximum of 230 cC for 10 seconds. maximum, sl;16" (1 59 mm) from case The case temperature OYi >s measured as shown on the dimen- sional outline drawings See "Package Dmensions' section of this catalog