Q1NK80ZR

STQ1NK80ZR-AP STMICROELECTRONICS | Alldatasheet

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STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 640 Table 4: Thermal Data (#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu Table 5: Avalanche Characteristics Table 6: GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit TO-92 SOT-223 DPAK/IPAK VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 800 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 0.3 0.25 1.0 A ID Drain Current (continuous) at TC = 100°C 0.19 0.16 0.63 A IDM (/circle6 ) Drain Current (pulsed) 5 A PTOT Total Dissipation at TC = 25°C 3 2.5 45 W Derating Factor 0.025 0.02 0.36 W /°C VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5KΩ) 1000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C TO-92 SOT-223 DPAK/IPAK Unit Rthj-case Thermal Resistance Junction-case Max -- -- 2.78 °C/W Rthj-amb(#) Thermal Resistance Junction-ambient Max 120 50 100 °C/W Rthj-lead Thermal Resistance Junction-lead Max 40 -- -- °C/W Tl Maximum Lead Temperature For Soldering Purpose 260 -- 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 50 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BV GSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On/Off Table 8: Dynamic Table 9: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 800 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 50 µA 3 3.75 4.5 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A 13 16 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 0.5 A 0.8 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 160 6.7 pF pF pF C oss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 640V 9.5 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 400 V, ID = 0.5 A R G = 4.7Ω VGS = 10 V (see Figure 21) ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640V, ID = 1.0 A, VGS = 10V (see Figure 24) 7.7 1.4 4.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 1.0 A A VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see Figure 22) 365 802 4.4 ns nC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see Figure 22) 388 802.7 4.6 ns nC A

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at:

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 TAPE AND REEL SHIPMENT DPAK FOOTPRINT DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimeters

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DIM. mm. inch A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V5 ° 5 ° TO-92 MECHANICAL DATA

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DIM. mm inch A 1.80 0.071 e 2.30 0.090 e1 4.60 0.181 V1 0 o 10o A1 0.02 P008B SOT-223 MECHANICAL DATA

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Table 10: Revision History Date Revision Description of Changes 08-Jun-2005 1 First Release 06-Sep-2005 2 Inserted Ecopack indication 16-Jan-2006 3 Corrected value on Table 3

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2006 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America