Q10N5

Q4010N5RP LITTELFUSE | Alldatasheet

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Technical content

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.

10 Amp Standard & Alternistor (High Communitation) Triacs

Qxx10xx & Qxx10xHx Series Qxx10xx & Qxx10xHx Series Main Features

Description

10 Amp bi-directional solid state switch series is designed

for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from AC line. Symbol Value Unit IT(RMS) 10 A VDRM/VRRM 400 to 1000 V IGT (Q1) 25 to 50 mA Features & Benefits

• RoHS Compliant
• Glass – passivated junctions
• Voltage capability up to 1000 V
• Surge capability up to 120 A
• Electrically isolated package “L - Package” and UL recognized for 2500Vrms
• Solid-state switching eliminates arcing or contact bounce that create voltage transients
• No contacts to wear out from reaction of switching events
• Restricted (or limited) RFI generation, depending on activation point sine wave

Applications

Alternistor type devices are used in applications requiring high commutation performance such as controlling inductive loads. Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip. Schematic Symbol MT2 MT1 G Agency Approval Agency Agency File Number ® L Package: E71639

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Absolute Maximum Ratings — Standard T riac Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Qxx10Ry/ Qxx10Ny TC = 95°C 10 A Qxx10Ly TC = 90°C ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hz t = 20 ms 100 A f = 60 Hz t = 16.7 ms 120 I2t I2t Value for fusing tp = 8.3 ms 60 A2s di/dt Critical rate of rise of on-state current IG = 200mA with ≤ 0.1μs rise time f = 120 Hz TJ = 125°C 70 A/μs IGTM Peak gate trigger current tp ≤ 10 μs IGT ≤ IGTM TJ = 125°C 1. 8 A PG(AV) Average gate power dissipation TJ = 125°C 0.5 W Tstg Storage temperature range -40 to 150 °C TJ Operating junction temperature range -40 to 125 °C Absolute Maximum Ratings — Alternistor T riac (3 Quadrants) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Qxx10LHy TC = 90°C

10 AQxx10RHy/

Qxx10NHy TC = 95°C ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hz t = 20 ms 110 A f = 60 Hz t = 16.7 ms 120 I2t I2t Value for fusing tp = 8.3 ms 60 A2s di/dt Critical rate of rise of on-state current f = 120 Hz TJ = 125°C 70 A/μs IGTM Peak gate trigger current tp ≤ 10 μs IGT ≤ IGTM TJ = 125°C 2.0 A PG(AV) Average gate power dissipation TJ = 125°C 0.5 W Tstg Storage temperature range -40 to 150 °C TJ Operating junction temperature range -40 to 125 °C Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Standard T riac Symbol Test Conditions Quadrant Qxx10x4 Qxx10x5 Unit IGT VD = 12V RL = 60 Ω I – II – III IV MAX. 25 75 (TYP) mA VGT I – II – III MAX. 1. 3 V VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C ALL MIN. 0.2 V IH IT = 200mA MAX. 35 50 mA dv/dt VD = VDRM Gate Open TJ = 125°C 400V MIN. 150 225 V/μs 600V 100 200 800V 75 175 VD = VDRM Gate Open TJ = 100°C 1000V 50 150 (dv/dt)c (di/dt)c = 5.4 A/ms TJ = 125°C TYP . 2 4 V/μs tgt IG = 2 x IGT PW = 15µs IT = 14.1 A(pk) TYP . 3.0 3.0 μs Note: xx = voltage, x = package, y = sensitivity

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor T riac (3 Quadrants) Symbol Test Conditions Quadrant Value Unit IGT VD = 12V RL = 60 Ω I – II – III MAX. 50 mA VGT I – II – III MAX. 1. 3 V VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C I – II – III MIN. 0.2 V IH IT = 100mA MAX. 50 mA dv/dt VD = VDRM Gate Open TJ = 125°C 400V MIN. 750 V/μs 600V 650 800V 500 VD = VDRM Gate Open TJ = 100°C 1000V 300 (dv/dt)c (di/dt)c = 5.4 A/ms TJ = 125°C TYP . 30 V/μs tgt IG = 2 x IGT PW = 15µs IT = 14.1 A(pk) TYP . 4.0 μs Static Characteristics Symbol Test Conditions Value Unit VTM ITM = 14.1A tp = 380 µs MAX. 1 .60 V IDRM IRRM VDRM = VRRM TJ = 25°C 400 - 600V MAX. 10 μA TJ = 125°C 400 - 800V 2 mA TJ = 100°C 1000V 3 Thermal Resistances Symbol Parameter Value Unit Rθ(J-C) Junction to case (AC) Qxx10Ryy/ Qxx10Nyy 1. 3 °C/W Qxx10Lyy 2.6 Rθ(J-A) Junction to ambient (AC) Qxx10Ryy 45 °C/W Qxx10Lyy 50 Note: xx = voltage, x = package, y = sensitivity, yy = type & sensitivity

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Figure 2: Normalized DC Gate T rigger Current for All Quadrants vs. Junction T emperature +125 0.0 1.0 2.0 3.0 4.0 -65 -40 -15 10 35 60 85 110 Junction Temperature (TJ) - ºC Ratio of IGT/ IGT (TJ = 25ºC) MT2 POSITIVE (Positi ve Half Cycle) MT2 NEGATIVE (Negative Half Cycle) MT1 MT2 + IGT REF QII MT1 IGT GATE MT2 REF MT1 MT2 REF MT1 MT2 REF QI QIV QIII ALL POLARITIES ARE REFERENCED TO MT1 (-) IGT GATE (+) IGT - IGT GATE (-) IGT GATE (+) Figure 1: Definition of Quadrants Note: Alternistors will not operate in QIV 0 2 4 6 8 10 12 RMS On-State Current [IT(RMS)] - AMPS Average On-State Power Dissipation o [PD (AV) ] - Watts CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 Figure 5: Power Dissipation (T ypical) vs. RMS On-State Current Figure 6: Maximum Allowable Case T emperature vs. On-State Current Qxx10Ryy Qxx10Nyy Qxx10Lyy 100 110 120 130 0 2 4 6 8 10 12 14 Max Allowable Case Temperature (TC) - C RMS On-State Current [IT(RMS)] - AMPS Figure 3: Normalized DC Holding Current vs. Junction T emperature Figure 4: Normalized DC Gate T rigger Voltage for All Quadrants vs. Junction T emperature +125 0.0 1.0 2.0 3.0 4.0 -65 -40 -15 10 35 60 85 110 Junction Temperature (TJ) - ºC Ratio of IH/ IH (TJ = 25ºC) +125 0.0 0.5 1.0 1.5 2.0 -65 -40 -15 10 35 60 85 110 Junction Temperature (TJ) - ºC Ratio of V GT / VGT (TJ = 25ºC)

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Figure 7: Maximum Allowable Ambient T emperature vs. On-State Current Figure 8: On-State Current vs. On-State Voltage (T ypical) TC = 25 ºC Positive or Negative Instantaneous On-State Voltage (VT) - Volts Positive or Negative Instantaneous On-State Current (IT) - AMPS Qxx10Ly Qxx10Ry Qxx10LHy Qxx10RHy 100 110 120 RMS On-State Current [I T(RMS)] - AMPS Max Allowable Ambient Temperature CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360º FREE AIR RATING - NO HEATSINK (TA) - ºC Figure 9: Surge Peak On-State Current vs. Number of Cycles 100 1000 1000100101 Surge Current Duration - Full Cycles Peak Surge (Non-Repetitive) On-State Current (ITSM) - AMPS SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [IT(RMS)]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value.

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Soldering Parameters Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Physical Specifications Environmental Specifications Test Specifications and Conditions AC Blocking MIL -STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours T emperature Cycling MIL -STD-750, M-1051, 100 cycles; -40°C to +150°C, 15-min dwell-time T emperature/ Humidity EIA/JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity High T emp Storage MIL -STD-750, M-1031, 1008 hours; 150°C Low-T emp Storage 1008 hours; -40°C Thermal Shock MIL -STD-750, M-1056 10 cycles; 0°C to 100°C; 5-min dwell time at each temperature; 10 sec (max) transfer time between temperature Autoclave EIA/JEDEC, JESD22-A102 168 hours (121°C at 2 ATMs) and 100% R/H Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3 Test A Lead Bend MIL -STD-750, M-2036 Cond E T erminal Finish 100% Matte Tin-plated Body Material UL recognized epoxy meeting flammabilty classification 94V-0. T erminal Material Copper Alloy Design Considerations Careful selection of the correct device for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Dimensions — TO-220AB (R-Package) — Non-Isolated Mounting T ab Common with Center Lead Dimension Inches Millimeters Min Max Min Max A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.67 2.92 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1 .52 1 .91 M 0.085 0.095 2.16 2.41 N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1. 14 1 .52 R 0.038 0.048 0.965 1 .22 K J A H G B F Ø E C D L R TC MEASURING POINT MT2 MT2 O P N M MT1 .276 7.01 .526 13.36 .320 8.13 GATE NOTCH IN GATE LEAD TO ID. NON-ISOLATED TAB AREA (REF.) 0.17 in2 Dimensions — TO-220AB (L-Package) — Isolated Mounting T ab Dimension Inches Millimeters Min Max Min Max A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.67 2.92 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1 .52 1 .91 M 0.085 0.095 2.16 2.41 N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1. 14 1 .52 R 0.038 0.048 0.965 1 .22 K J A H G B F Ø E C D L R TC MEASURING POINT MT2 O P N M MT1 GATE AREA (REF.) 0.17 in2 .320 8.13 .526 13.36 .276 7.01 Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm).

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Dimensions — TO-263AA (N-Package) — D2-PAK Surface Mount Dimension Inches Millimeters Min Max Min Max A 0.360 0.370 9.14 9.40 B 0.380 0.420 9.65 10.67 C 0.178 0.188 4.52 4.78 D 0.025 0.035 0.64 0.89 E 0.045 0.060 1. 14 1 .52 F 0.060 0.075 1 .52 1 .91 G 0.095 0.105 2.41 2.67 H 0.092 0.102 2.34 2.59 J 0.018 0.024 0.46 0.61 K 0.090 0.110 2.29 2.79 S 0.590 0.625 14.99 15.88 V 0.035 0.045 0.89 1. 14 U 0.002 0.010 0.05 0.25 W 0.040 0.070 1. 016 1 .78 G B A W V S MT1 MT2 TC MEASURING POINT C E K H J U .320 8.13 .276 7.01 .331 8.41 GATE .460 11.68 .665 16.89 .260 6.60 .150 3.81 .080 2.03 .085 2.16 .055 1.40 .350 8.89 .276 7.01 .276 7.01 AREA: 0.11 IN2 D F Product Selector Part Number Voltage (xx) Gate Sensitivity Quadrants Type Package 400V 600V 800V 1000V I – II – III IV Qxx10L4 X X X X 25 mA 50 mA Standard Triac TO-220L Qxx10R4 X X X X 25 mA 50 mA Standard Triac TO-220R Qxx10N4 X X X X 25 mA 50 mA Standard Triac TO-263 D²-PAK Qxx10L5 X X X X 50 mA Standard Triac TO-220L Qxx10R5 X X X X 50 mA Standard Triac TO-220R Qxx10N5 X X X X 50 mA Standard Triac TO-263 D²-PAK Qxx10LH5 X X X X 50 mA Alternistor Triac TO-220L Qxx10RH5 X X X X 50 mA Alternistor Triac TO-220R Qxx10NH5 X X X X 50 mA Alternistor Triac TO-263 D²-PAK Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx10L/Ryy Qxx10L/Ryy 2.2 g Bulk 500 Qxx10L/RyyTP Qxx10L/Ryy 2.2 g Tube Pack 500 (50 per tube) Qxx10NyyTP Qxx10Nyy 1 .6 g Tube 500 (50 per tube) Qxx10NyyRP Qxx10Nyy 1 .6 g Embossed Carrier 500 Note: xx = voltage, yy = type & sensitivity

Revised: November 1, 2010 05:04 PM ©2010 Littelfuse, Inc T eccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Qxx10xx & Qxx10xHx Series Gate MT1 MT2 0.512 (13.0) Arbor Hole Dia. 0.945 (24.0) 0.63 (16.0) 1.01 (25.7) 12.99 (330.0) 0.827 (21.0) 0.157 (4.0) Direction of Feed Dimensions are in inches (and millimeters). * Cover tape 0.059 DIA(1.5) TO-263 Embossed Carrier Reel Pack (RP) Specifications Meets all EIA-481-2 Standards Part Numbering System Q 60 10 L H5 56 DEVICE TYPE Q: Triac or Alternistor VOLTAGE RATING 40: 400V 60: 600V 80: 800V K0: 1000V CURRENT RATING 10: 10A SENSITIVITY Standard Triac: 4: 25 mA (QI, II, III) 50 mA (QIV) 5: 50 mA (QI, II, III) Alternistor Triac: H5: 50mA (QI, II, III) PACKAGE TYPE L: TO-220 Isolated R: TO-220 Non-Isolated N: TO-263 (D2 Pak) LEAD FORM DIMENSIONS xx: Lead Form Option Part Marking System TO-202 Type 1 (F Package) Q6010F51 yxxxx MY MY Q6010R5 Q6010L5