PZT3904 STMICROELECTRONICS | Alldatasheet

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Technical content

SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA ■ SILICON EPITAXIAL PLANAR NPN TRANSISTOR ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPE IS PZT3906

APPLICATIONS

■ WELL SUITABLE FOR SMD MOTHER BOARD ASSEMBLY ■ SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM June 2002 SOT-223 Type Marking PZT3904 3904 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) 60 V V CEO Collector-Emitter Voltage (IB = 0) 40 V V EBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 200 mA P tot Total Dissipation at TC = 25 oC1 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC

R thj-amb • Thermal Resistance Junction-Ambient Max 125 oC/W

  • Device mounted on a PCB area of 1 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEX Collector Cut-off Current (VBE = -3 V) V CE = 30 V 50 nA IBEX Base Cut-off Current (VBE = -3 V) V CE = 30 V 50 nA V (BR)CEO ∗ Collector-Emitter Breakdown Voltage B = 0) IC = 1 mA 40 V V (BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 10 µ A 60 V V (BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 µ A 6V V CE(sat)∗ Collector-Emitter Saturation Voltage IC = 10 mA IB = 1 mA IC = 50 mA IB = 5 mA 0.2 0.2 V V V BE(sat)∗ Base-Emitter Saturation Voltage IC = 10 mA IB = 1 mA IC = 50 mA IB = 5 mA 0.65 0.85 0.95 V V hFE ∗ DC Current Gain I C = 0.1 mA VCE = 1 V IC = 1 mA VCE = 1 V IC = 10 mA VCE = 1 V IC = 50 mA VCE = 1 V IC = 100 mA VCE = 1 V 100 300 fT Transition Frequency I C = 10 mA VCE = 20 V f = 100 MHz 250 270 MHz C CBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 4 pF C EBO Emitter-Base Capacitance IC = 0 VEB = 0.5 V f = 1 MHz 18 pF NF Noise Figure V CE = 5 V IC = 0.1 mA f = 10 Hz to 15.7 KHz RG = 1 KΩ 5d B td tr Delay Time Rise Time IC = 10 mA IB = 1 mA V CC = 30 V ns ns ts tf Storage Time Fall Time IC = 10 mA IB1 = -IB2 = 1 mA V CC = 30 V 200 ns ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % PZT3904

DIM. mm inch A 1.80 0.071 e 2.30 0.090 e1 4.60 0.181 V1 0 o 10o A1 0.02 P008B SOT-223 MECHANICAL DATA PZT3904

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com PZT3904