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2N3904 FAIRCHILD | Alldatasheet

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C B E B C C SOT-223 E NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C  2001 Fairchild Semiconductor Corporation Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N3904 *MMBT3904 **PZT3904 PD Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 1,000 8.0 mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 2N3904 MMBT3904 SOT-23 Mark: 1A PZT3904 2N3904 / MMBT3904 / PZT3904 2N3904/MMBT3904/PZT3904, Rev A

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V IBL Base Cutoff Current V CE = 30 V, VEB = 3V 50 nA ICEX Collector Cutoff Current V CE = 30 V, VEB = 3V 50 nA OFF CHARACTERISTICS ON CHARACTERISTICS* SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Itf=.4 Vtf=4 Xtf=2 Rb=10) Spice Model fT Current Gain - Bandwidth Product I C = 10 mA, VCE = 20 V, f = 100 MHz

300 MHz

Cobo Output Capacitance V CB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Cibo Input Capacitance V EB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF NF Noise Figure IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ ,f=10 Hz to 15.7kHz 5.0 dB td Delay Time V CC = 3.0 V, VBE = 0.5 V, 35 ns tr Rise Time I C = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time V CC = 3.0 V, IC = 10mA 200 ns tf Fall Time I B1 = IB2 = 1.0 mA 50 ns hFE DC Current Gain I C = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 100 300 VCE(sat) Collector-Emitter Saturation Voltage I C = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.2 0.3 V V VBE(sat) Base-Emitter Saturation Voltage I C = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier (continued)

2N3904 / MMBT3904 / PZT3904 Typical Characteristics Base-Emitter ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER ON VOLTAGE (V)BE(ON) C V = 5VCE 25 °C 125 °C - 40 °C NPN General Purpose Amplifier (continued) Base-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA) V - BASE-EMITTER VOLTAGE (V) BESAT C β = 10 25 °C 125 °C - 40 °C Collector-Emitter Saturation Voltage vs Collector Current 0.1 1 10 100 0.05 0.1 0.15 I - COLLECTOR CURRENT (mA) V - COLLECTOR-EMITTER VOLTAGE (V)CESAT 25 °C C β = 10 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 100 500 T - AMBIENT TEMPERATURE ( C) I - COLLECTOR CURRENT (nA) A V = 30VCB CBO Capacitance vs Reverse Bias Voltage 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C obo C ibo f = 1.0 MHz Typical Pulsed Current Gain vs Collector Current 0. 1 1 10 1 00 10 0 20 0 30 0 40 0 50 0 I - COL LECTOR C URR ENT (mA ) h - TYPI CAL PULSED CURRENT GAIN FE - 40 °C 25 °C C V = 5VCE 125 °C

0.25 0.5 0.75 TEMPERATURE ( C) P - POWER DISSIPA TION (W) D o SOT-223 SOT-23 TO-92 Typical Characteristics (continued) Noise Figure vs Frequency 0.1 1 10 100 f - FREQUENCY (kHz) NF - NOISE FIGURE (dB) V = 5.0VCE I = 100 µA, R = 500 ΩC S I = 1.0 mA R = 200Ω C S I = 50 µA R = 1.0 kΩ C S I = 0.5 mA R = 200Ω C S kΩ Noise Figure vs Source Resistance 0.1 1 10 100 R - SOURCE RESISTANCE ( ) NF - NOISE FIGURE (dB) I = 100 µAC I = 1.0 mAC S I = 50 µAC I = 5.0 mAC θ - DEGREES 100 120 140 160 180 Current Gain and Phase Angle vs Frequency 1 10 100 1000 f - FREQUENCY (MHz) h - CURRENT GAIN (dB) θ V = 40VCE I = 10 mAC h fe fe Turn-On Time vs Collector Current 11 0 1 0 0 100 500 I - COLLECTOR CURRENT (mA) TIME (nS) I = I = B1 C Ic 40V 15V 2.0V t @ V = 0VCBd t @ V = 3.0VCCr Rise Time vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) t - RISE TIME (ns) I = I = B1 C Ic T = 125°C T = 25°CJ V = 40VCC r J 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier (continued)

2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) t - STORAGE TIME (ns) I = I = B1 C Ic S T = 125°C T = 25°CJ J Fall Time vs Collector Current 1 10 100 100 500 I - COLLECTOR CURRENT (mA) t - FALL TIME (ns) I = I = B1 C Ic V = 40VCC f T = 125°C T = 25°CJ J Current Gain 0.1 1 10 100 500 I - COLLECTOR CURRENT (mA) h - CURRENT GAIN V = 10 VCE C fe f = 1.0 kHz T = 25 CA o Output Admittance 0.1 1 10 100 I - COLLECTOR CURRENT (mA) h - OUTPUT ADMITTANCE ( mhos) V = 10 VCE C oe f = 1.0 kHz T = 25 CA oµ Input Impedance 0.1 1 10 0.1 100 I - COLLECTOR CURRENT (mA) h - INPUT IMPEDANCE (k ) V = 10 VCE C ie f = 1.0 kHz T = 25 CA oΩ Voltage Feedback Ratio 0.1 1 10 I - COLLECTOR CURRENT (mA) h - VOLTAGE FEEDBACK RATIO (x10 ) V = 10 VCE C re f = 1.0 kHz T = 25 CA o

10 KΩΩΩΩΩ

3.0 V 275 ΩΩΩΩΩ Duty Cycle ===== 2% Duty Cycle ===== 2% - 0.5 V 300 ns 10.6 V 10.9 V - 9.1 V 3.0 V 275 ΩΩΩΩΩ 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit FIGURE 1: Delay and Rise Time Equivalent Test Circuit 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier (continued)

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Rev. G ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST SyncFET™ TinyLogic™ UHC™ VCX™

Product Information

PZT3904 specifications and overview.

Summary

NPN General Purpose Amplifier

Description

This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.

Source title PZT3904 Datasheet(PDF) - Fairchild Semiconductor

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