PZT3019 SECOS | Alldatasheet
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Technical content
Any changing of specification will not be informed individual PZT3019 NPN Transistor Epitaxial Planar Transistor R o H S C o m p l i a n t P r o d u c t http://www.SeCoSGmbH.com Elektronische Bauelemente The PZT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. 3 0 1 9 Date Code B C E
Description
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO - - V IC=100mA IC=30mA IE=100 mA VCB= 90V VEB= IC= VCE= V, IC= VCE= V, IC= 50mA, VCB= 10 , f=1MHz,IE=0 f=100MHz BVCEO 80 - - V BVEBO - - V ICBO - - 50 nA IEBO - - nA VCE(sat) - VBE(sat) V hFE1 - hFE2 300 fT - MH Cob - 12 pF z Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance t 140 100 0.2 1.1 V 150mA,IB=15mA IC=150mA,IB=15mA 10 0.1mA VCE= 50m V C 100 o hFE3 hFE4 hFE5 - - V, IC= 10 10mA VCE= V, IC= 10 150mA VCE= V, IC= 10 500mA VCE= V, IC= 10 1000mA MAXIMUM RATINGS Symbol Parameter Value Collector Current 55~+150 140 IC TstgTJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage V A W Storage Temperature C O VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V Units ABSOLUTE Ta=25 C o 5 1.40 1.80 Millimeter Millimeter SOT-223 01-Jun-2002 Rev. A Page1 of 1 A 6.70 7.30 B 13CTYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0C 10C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70