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Silicon Planar Medium Power Transistor Elektronische Bauelemente 31-May-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector B C E RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. MARKING MAXIMUM RATINGS (TA=25 °C, unless otherwise specified) Parameter Symbol Value Unit Collector to Base Voltage V CBO -60 V Collector to Emitter Voltage V CEO -60 V Emitter to Base Voltage V EBO -5 V Collector Current I C -600 mA Total Power Dissipation P D 1.5 W Junction, Storage Temperature T J, TSTG +150, -55 ~ +150 ℃ ELECTRICALCHARACTERISTICS (TA=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector - Base Breakdown Voltage V (BR)CBO -60 - - V I C = -10uA Collector - Emitter Breakdown Voltage V(BR)CEO -60 - - V I C = -10mA Emitter - Base Breakdown Voltage V (BR)EBO -5 - - V I C = -10uA Collector Cut - Off Current I CBO - - -10 nA V CB = -50V Emitter Cut - Off Current I CEX - - -50 nA V CE= -30V, VBE = -0.5V Collector - Emitter Saturation Voltage VCE(sat)1 - -0.2 -0.4 V I C = -150mA, IB = -15mA VCE(sat)2 - -0.5 -1.6 V I C = -500mA, IB = -50mA Base - Emitter Voltage VBE(sat) - - -1.3 V I C = -150mA, IB = -15mA VBE(sat) - - -2.6 V I C = -500mA, IB = -50mA DC Current Gain hFE1 75 - - V CE = -10V, IC = -100 uA hFE2 100 - - V CE = -10V, IC = -1mA hFE3 100 - - V CE = -10V, IC = -10mA hFE4 100 180 300 V CE = -10V, IC = -150mA hFE5 50 - - V CE = -10V, IC = -500mA Transition Frequency f T 200 - - MHz VCB = -20V, IC = -50mA, f =100 MHz Collector Output Capacitance C OB - - 8 pF V CB = -10 V, f = 1 MHz *Pulse Test：Pulse width ≦ 380 us, Duty cycle ≦ 2 % REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.30 6.70 G 0.02 0.10 B 6.70 7.30 H 1.50 2.00 C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K 0.85 1.05 E 4.60 REF. L 2.30 REF. F 0.60 0.80 M 2.90 3.10 I 0.02 0.10 N 13 TYP. O 0° 10 ° SOT-223 2907A
Silicon Planar Medium Power Transistor Elektronische Bauelemente 31-May-2010 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES