PZT2907A DGNJDZ | Alldatasheet

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Technical content

RANSISTOR (PNP)

FEATURES

y Epitaxial planar die construction y Complementary PNP Type available(PZT2222A) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) S ymbol Parameter Value Unit VCBO Collector-Ba se Voltage -60 V VCEO Collector-Emitter V oltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Cur rent -Continuous -0.6 A PC Collector Power Dissip ation 1 W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO IC=-1 0μA,IE= 0 -60 V Co llector-emitter breakdown voltage V(B R)CEO IC= -10mA,IB= 0 -60 V Emitter-b ase breakdown voltage V( BR)EBO IE=-1 0μA,IC=0 -5 V Co llector cut-off current ICB O V CB= -50V,IE= 0 -10 nA Emitter cut-off current IEBO V EB=-5 V,IC= 0 -50 nA hFE(1) V CE= -10V,IC= -0.1mA 75 hFE(2) V CE= -10V,IC= -1mA 100 hFE(3) V CE= -10V,IC= -10mA 100 hFE(4) V CE= -10V,IC= -150mA 100 300 DC cu rrent gain hFE(5) V CE= -10V,IC= -500mA 50 VCE (sat) I C= -150mA,IB=- 15mA -0.4 V Co llector-emitter saturation voltage VCE (sat) I C= -500mA,IB=- 50mA -1.6 V VBE( sat) I C= -150mA,IB=- 15mA -1.3 V Bas e-emitter saturation voltage VBE( sat) I C= -500mA,IB=- 50mA -2.6 V T ransition frequency fT V CE= -20V,IC= -50mA,f=100MHz 200 MHz Co llector capacitance Cc V CB= -10V,IE=0 ,f=1MHz 8 pF Emitter cap acitance CE V EB=-2 V,IC= 0,f=1MHz 30 pF Dela y time td 12 ns Rise time tr 30 ns S torage time tS 300 ns Fall time tf I C= -150mA I B1=- IB2= - 15mA 65 n s SOT -223 BASE 2. COLLECTOR 3. EMITTER MARKING: S OT-223 Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/4 www.dgnjdz.com

-200 - 400 -600 -800 -1000 -100 -200 -300 -400 -500 -600 -0.1 -1 -1 100 -0 -20 -4 0 -60 -80 -100 100 200 300 400 500 -10 - 100 100 1000 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -1 -10 -1 -200 -400 -600 -800 -1000 -1 -10 -1 -200 -400 -600 -800 -0 -2 -50 -100 -150 -200 -250 -300 -350 -400 VCE=-10V Ta=25℃ Ta=100 o C BASE-EM ITTER VOLTAGE VBE(mV) COLLECTOR CURRENT IC (mA IC —— VBE -20 f=1MHz IE=0 / IC=0 Ta=25 o C REVERSE VOLT AGE V (V) CAPACITANCE C ( pF) VCB / VEBCob / Cib —— Cib Cob TRANS ITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=-10V Ta=25 o C IC fT —— -600-6 VCE= -10V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE —— -60 COLLECT OR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta COLLECTOR CURRENT IC (mA) BASE-EMIT TER SATURATION VOLTAGE VBEsa t (mV) Ta=25℃ Ta=100℃ β=10 ICVBE sat —— Ta=25℃ Ta=100℃ β=10 VCE sat —— IC COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURRENT IC (mA) CO MMON EMITTER Ta=25℃ -2mA -1.8 mA -1.6 mA -1.4 mA -1.2 mA -1mA -0.8 mA -0.6 mA -0.4 mA IB=-0.2m A COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) St atic Characteristic Ty pical Characteristics Dongguan Nanjing Electronics Ltd. 2/4 www.dgnjdz.com

n. Max. Min. Max.Sy mbol Dimensions In Millimeters Dimensions In Inches SO SO T-223 Suggested Pad Layout Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com