PZT2907A KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Tran sistors PNP Transistors PZT2907A (KZT2907A) ■ Features
- Epitaxial planar die construction
- Complementary to PZT2222A 1.80 (max) 0.02 ~ 0.1 0.70±0.1 4.60 (typ) 10b 7.0±0.3 3.50±0.2 6.50±0.2 3.00±0.1 2.30 (typ) SOT-223 Unit:mm 1.Base 2.Collector 3.Emitter 4.Collector 1 2 3 0.250 Gauge Plane ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -600 mA Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V
www.kexin.com.cn2 Transistors PNP Transistors PZT2907A (KZT2907A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE= 0 -60 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB= 0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC= 0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE= 0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 IC=-150 mA, IB=-15mA -0.4 IC= -500 mA, IB= -50mA -1.6 IC=-150 mA, IB=-15mA -1.3 IC= -500 mA, IB= -50mA -2.6 hFE(1) VCE= -10V, IC=- 0.1mA 75 hFE(2) VCE= -10V, IC= -1mA 100 hFE(3) VCE= -10V, IC=- 10mA 100 hFE(4) VCE= -10V, IC= -150mA 100 300 hFE(5) VCE= -10V, IC= -500mA 50 Delay time td 12 Rise time tr 30 Storage time ts 300 Fall time tf 65 Emitter input capacitance Cib VEB= -2V, IC= 0,f=1MHz 30 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 8 Transition frequency fT VCE= -20V, IC= -50mA,f=100MHz 200 MHz V nA Collector-emitter saturation voltage VCE(sat) pF VBE(sat) Base - emitter saturation voltage V DC current gain nS IC=-150mA, IB1=IB2=-15mA