PZT2907A

PZT2907 DIOTEC | Alldatasheet

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PNP Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage PNP Version 2006-05-09 Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Power dissipation Verlustleistung 1.3 W Plastic case Kunststoffgehäuse SOT-223 Weight approx. Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) PZT2907 PZT2907A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open - VCEO 40 V 60 V Collector-Base-volt. - Kollektor-Basis-Spannung B open - VCBO 60 V 60 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5 V Power dissipation – Verlustleistung Ptot 1.3 W 1) Collector current – Kollektorstrom (dc) - IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-cutoff current – Kollektor-Reststrom IE = 0, - VCB = 50 V PZT2907 PZT2907A - ICBO - ICBO 20 nA 10 nA IE = 0, - VCB = 50 V, Tj = 150°C PZT2907 PZT2907A - ICBO - ICBO 20 µA 10 µA Emitter-cutoff current – Emitter-Reststrom IC = 0, - VEB = 3 V - IEBO – –- 10 nA Collector saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCEsat - VCEsat 0.4 V 1.6 V Base saturation voltage – Basis-Sättigungsspannung 2) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA PZT2907 PZT2907A - VBEsat - VBEsat 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 3.5±0.2 1.65 7±0.3 2.3 3.25 0.7 6.5±0.2 3±0.1 1 2 3 Type Code

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - IC = 0.1 mA, - VCE = 10 V PZT2907 PZT2907A hFE hFE - IC = 1 mA, - VCE = 10 V PZT2907 PZT2907A hFE hFE 100 - IC = 10 mA, - VCE = 10 V PZT2907 PZT2907A hFE hFE 100 - IC = 150 mA, - VCE = 10 V PZT2907 PZT2907A hFE hFE 100 100 300 300 - IC = 500 mA, - VCE = 10 V PZT2907 PZT2907A hFE hFE Gain-Bandwidth Product – Transitfrequenz - IC = 20 mA, - VCE = 20 V, f = 100 MHz fT 200 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf Switching times – Schaltzeiten delay time rise time - VCC = 30 V, - IC = 150 mA, - IB1 = 15 mA td – – 10 tr – – 40 storage time fall time - VCC = 6 V, - IC = 150 mA, - IB1 = - IB2 = 15 mA ts – – 80 tf – – 30 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 93 K/W 1) Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpad RthS < 27 K/W Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren PZT2222, PZT2222A 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG