PZT2907A-C SECOS | Alldatasheet
Document overview
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Technical content
Silicon Planar Medium Power Transistor Elektronische Bauelemente 25-Oct-2017 Rev. E Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Epitaxial Planar Die Construction MARKING
PACKAGE INFORMATION
(T A=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage V CBO -60 V Collector-Emitter Voltage V CEO -60 V Emitter-Base Voltage V EBO -5 V Collector Current IC -600 mA Collector Power Dissipation P C 1 W Junction and Storage Temperature T J, T STG 150, -55~150 ° C
ELECTRICAL CHARACTERISTICS
(TA=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V (BR)CBO -60 - - V I C = -10 µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 - - V I C = -10mA, IB=0 Emitter-Base Breakdown Voltage V (BR)EBO -5 - - V I C =0, IE= -10 µA Collector Cut-Off Current I CBO - - -10 nA V CB = -50V, IE=0 Emitter Cut-Off Current I EBO - - -50 nA V EB = -5V, IC =0 Collector-Emitter Saturation Voltage VCE(sat) - - -0.4 V IC = -150mA, I B= -15mA Base-Emitter Voltage V BE(sat) - - -1.3 V IC = -150mA, I B= -15mA DC Current Gain h FE 75 - - VCE = -10V, I C = -0.1mA 100 - - V CE = -10V, I C = -1mA 100 - - V CE = -10V, I C = -10mA 100 - 300 V CE = -10V, I C = -150mA 50 - - V CE = -10V, I C = -500mA Transition Frequency f T - 200 - MHz VCE = -20V, I C = -50mA, f=100MHz Collector Capacitance C C - 8 - pF V CB = -10V, IE=0, f=1MHz Emitter Capacitance C E - 30 - pF V EB = -2V, I C =0, f=1MHz Delay Time T d - 12 - nS I C = -150mA, IB1= -IB2= -15mA Rise Time T r - 30 - Storage Time T s - 300 - Fall Time T f - 65 - Package MPQ Leader Size SOT-223 2.5K 13 inch Part Number Type PZT2907A-C Lead (Pb)-free and Halogen-free SOT-223 ZT2907A Top View A M B D LK F G H J E C REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20
Silicon Planar Medium Power Transistor Elektronische Bauelemente 25-Oct-2017 Rev. E Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES