PZT2222A SECOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Any changing of specification will not be informed individual PZT2222A NPN Silicon General Purpose Transistor R o H S C o m p l i a n t P r o d u c t http://www.SeCoSGmbH.com Elektronische Bauelemente

FEATURES

P CM :1 W ˄Tamb=25ć˅ Collector current I CM :0 . 6 A Collector-base voltage V(BR)CBO :7 5 V Operating and storage junction temperature range TJˈTstg: -55ć to +150 ć ELECTRICAL CHARACTERISTICS ˄Tamb=25ć unless otherwise specified ˅ P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 10­Aˈ I E=0 75 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mAˈ I B=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10­Aˈ I C=0 6 V Collector cut-off current I CBO V CB=60V , I E=0 0. 01 ­A Emitter cut-off current I EBO V EB= 3V , I C=0 0. 01 ­A h FE(1) V CE=10V, I C= 0.1mA 35 h FE(2) V CE=10V, I C= 1mA 50 h FE(3) V CE=10V, I C= 10mA 75 h FE(4) V CE=10V, I C= 150mA 100 300 h FE(5) V CE=1V, I C= 150mA 50 DC current gain h FE(6) V CE=10V, I C= 500mA 40 VCE(sat) I C=500 mA, IB= 50mA 1 V Collector-emitter saturation voltage VCE(sat) I C=150 mA, IB= 15mA 0.3 V VBE(sat) I C=500 mA, IB= 50mA 2.0 V Base-emitter saturation voltage VBE(sat) I C=150 mA, IB=15mA 0.6 1.2 V Transition frequency f T VCE=20V, I C= 20mA f=100MHz

300 MHz

VCB=10V, I E= 0 f=1MHz 8 pF Delay time t d 10 nS Rise time t r VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 25 nS Storage time t S 225 nS Fall time t f VCC=30V, IC=150mA IB1= IB2= 15mA 60 nS U n i t : m m SOT-223 1. BASE 2. COLLECTOR 3. EMITTER f f f f e efe fee f fe 1 2 3 B C E C 01-Jun-2002 Rev. A Page 1 of 4 0D[