PZT2222A DGNJDZ | Alldatasheet

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TRANSISTOR (NPN)

FEATURES

z Epitaxial planar die construction z Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (Ta=25 unl ess otherwise noted) Symbol Parameter Value Unit VCBO Collector-Ba se Voltage 75 V VCEO Collector-Emitter V oltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Cur rent -Continuous 600 mA PC Collector Power Dissip ation 1 W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~ +150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Max Unit Co llector-base breakdown voltage V(B R)CBO I C= 1 0μ A,IE= 0 75 V Co llector-emitter breakdown voltage V(B R)CEO I C= 10mA, IB= 0 40 V Emitter-b ase breakdown voltage V( BR)EBO I E=1 0μA, IC=0 6 V Co llector cut-off current ICB O V CB= 60V, IE= 0 10 nA Co llector cut-off current ICE X CEV=60V,V EB(off)=3V 10 nA Emitter cut-off current IEBO V EB= 3 V , IC= 0 10 nA hFE(1) V CE= 10V, IC= 0.1mA 35 hFE(2) V CE= 10V, IC= 1mA 50 hFE(3) V CE= 10V, IC= 10mA 75 hFE(4) V CE= 10V, IC= 150mA 100 300 hFE(5) V CE=1 V, IC= 150mA 50 DC cu rrent gain hFE(6) V CE= 10V, IC= 500mA 40 VCE (sat) I C= 500mA, IB= 50mA 1 V Co llector-emitter saturation voltage VCE (sat) I C= 150mA, IB= 15mA 0.3 V VBE( sat) I C= 500mA, IB= 50mA 2.0 V Bas e-emitter saturation voltage VBE( sat) I C= 150mA, IB=15mA 1.2 V T ransition frequency fT VCE= 20V,IC= 20mA, f=100MHz 300 MHz Ou tput Capacitance Cob VCB= 10V, IE= 0 ,f=1MHz 8 pF Dela y time td 10 ns Rise time tr VCC= 30V, IC= 150mA VBE( off)=0 .5V,IB1= 15mA 25 ns S torage time tS 225 ns Fall time tf VCC= 30V, IC= 150mA IB1=- IB2= 15mA 60 ns SOT -223 BASE 2. COLLECTOR 3. EMITTER MARKING: S OT-223 Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/4 www.dgnjdz.com

0.1 100 11 0 1 00 300 600 900 1200 0 25 50 75 100 125 150 100 200 300 400 500 600 700 800 900 1000 1100 1200 1 10 100 100 1000 11 0 1 00 100 1000 0.1 1 10 100 02468 1 0 1 2 1 4 1 6 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 100 COMM ON EMITTER VCE= 10V VBEIC —— BESE-EM MITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA) T a=25℃ Ta=1 00℃ 600 β=10 IC VBE sat —— BASE-EMIT TER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ 600 PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECT OR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 IC VCE sat —— COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURREMT IC (mA) 600 IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMM ON EMITTER VCE= 10V 600 f=1MHz IE=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib —— Cob Cib REVERSE VOLT AGE V (V) CAPACITANCE C ( pF) COMM ON EMITTER T a=25℃ 1mA 900uA 800uA 700uA 600uA 500uA 400uA 300uA 200uA IB= 100uA COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) St atic Characteristic COMM ON EMITTER VCE=10V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANS ITION FREQUENCY fT (MHz) 500 ICfT —— Ty pical Characteristics Dongguan Nanjing Electronics Ltd. 2/4 www.dgnjdz.com

n. Max. Min. Max.Sy mbol Dimensions In Millimeters Dimensions In Inches SO SO T-223 Suggested Pad Layout Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com