PZT2222A KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Tran sistors NPN Transistors PZT2222A (KZT2222A) ■ Features
- Epitaxial planar die construction
- Complementary to PZT2907A ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 40 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V 1.80 (max) 0.02 ~ 0.1 0.70±0.1 4.60 (typ) 10b 7.0±0.3 3.50±0.2 6.50±0.2 3.00±0.1 2.30 (typ) SOT-223 Unit:mm 1.Base 2.Collector 3.Emitter 4.Collector 1 2 3 0.250 Gauge Plane
www.kexin.com.cn2 Transistors NPN Transistors PZT2222A (KZT2222A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 75 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 40 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 75 V , IE= 0 100 Collector cut-off current ICEX VCE= 60 V , VEB(off)=-3V 100 Emitter cut-off current IEBO VEB= 6V , IC=0 100 IC=150 mA, IB=15mA 0.3 IC= 500 mA, IB= 50mA 1 IC=150 mA, IB=15mA 1.2 IC= 500 mA, IB= 50mA 2 hFE(1) VCE= 10V, IC= 0.1mA 35 hFE(2) VCE= 10V, IC= 1mA 50 hFE(3) VCE= 10V, IC= 10mA 75 hFE(4) VCE= 10V, IC= 150mA 100 300 hFE(5) VCE= 1V, IC= 150mA 50 hFE(6) VCE= 10V, IC= 500mA 40 Delay time td 10 Rise time tr 25 Storage time ts 225 Fall time tf 60 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 8 pF Transition frequency fT VCE= 20V, IC= 20mA,f=100MHz 300 MHz VBE(sat) Base - emitter saturation voltage V DC current gain V nA Collector-emitter saturation voltage VCE(sat) VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA nS VCC=30V, IC=150mA, IB1=-IB2=15mA