PZT2222A FS | Alldatasheet
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PZT2222A TRANSISTOR (NPN)
FEATURES
Epitaxial planar die construction Complementary PNP Type available (PZT2907A) MAXIMUM RATINGS (Ta =25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~ +150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) s n o i t i d n o c t s e T l o b m y S r e t e m a r a P Min Max Unit Collector-base breakdown voltage V(BR)CBO I C= 10μ A,IE V 5 7 0 = Collector-emitter breakdown voltage V(BR)CEO I C= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO I E=10μA, IC V 6 0 = Collector cut-off current ICBO V CB=60V, IE A n 0 1 0 = Collector cut-off current ICEX V CE=60V,VBE(off)=3V 10 nA Emitter cut-off current IEBO V EB= 3V , IC A n 0 1 0 = hFE(1) V CE=10V, IC= 0.1mA 35 hFE(2) V CE=10V, IC= 1mA 50 hFE(3) V CE=10V, IC= 10mA 75 hFE(4) V CE=10V, IC= 150mA 100 300 hFE(5) V CE=1V, IC= 150mA 50 DC current gain hFE(6) V CE=10V, IC= 500mA 40 VCE(sat) I C=500mA, IB= 50mA 1 V Collector-emitter saturation voltage VCE(sat) I C=150mA, IB= 15mA 0.3 V VBE(sat) I C=500mA, IB= 50mA 2.0 V Base-emitter saturation voltage VBE(sat) I C=150mA, IB=15mA 1.2 V Transition frequency fT VCE=20V,IC= 20mA, f=100MHz 300 MHz Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF Delay time td n 0 1 s Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 25 n s Storage time tS n 5 2 2 s Fall time tf VCC=30V, IC=150mA IB1=-IB2= 15mA 60 n s SOT-223 1. BASE 2. COLLECTOR 3. EMITTER 2011. 09. 29 1/1Revision No : 0