PZT2222A

PZT2222 DIOTEC | Alldatasheet

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NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage NPN Version 2006-05-09 Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Power dissipation Verlustleistung 1.3 W Plastic case Kunststoffgehäuse SOT-223 Weight approx. Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) PZT2222 PZT2222A Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open VCEO 30 V 40 V Collector-Base-volt. - Kollektor-Basis-Spannung B open VCBO 60 V 75 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5 V 6 V Power dissipation – Verlustleistung Ptot 1.3 W 1) Collector current – Kollektorstrom (dc) IC 600 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-cutoff current – Kollektor-Reststrom IE = 0, VCB = 50 V PZT2222 PZT2222A ICBO ICBO 20 nA 10 nA IE = 0, VCB = 50 V, Tj = 150°C PZT2222 PZT2222A ICBO ICBO 20 µA 10 µA Emitter-cutoff current – Emitter-Reststrom IC = 0, VEB = 3 V IEBO – –- 10 nA Collector saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VCEsat VCEsat 0.4 V 0.3 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VCEsat VCEsat 1.6 V 1.0 V 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 3.5±0.2 1.65 7±0.3 2.3 3.25 0.7 6.5±0.2 3±0.1 1 2 3 Type Code

Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PZT2222 PZT2222A VBEsat VBEsat 1.3 V 1.2 V IC = 500 mA, IB = 50 mA PZT2222 PZT2222A VBEsat VBEsat 2.6 V 2.0 V DC current gain – Kollektor-Basis-Stromverhältnis IC = 0.1 mA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V 2) hFE hFE hFE hFE 100 300 IC = 500 mA, VCE = 10 V 2) PZT2222 PZT2222A hFE hFE Gain-Bandwidth Product – Transitfrequenz IC = 20 mA, VCE = 20 V, f = 100 MHz fT 200 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 8 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf Switching times – Schaltzeiten delay time rise time storage time fall time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA td – – 10 ns tr – – 25 ns ts – – 225 ns tf – – 60 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 93 K/W 1) Thermal resistance junction to soldering point Wärmewiderstand Sperrschicht – Lötpad RthS < 27 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren PZT2907, PZT2907A 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG