PZT2222A-C SECOS | Alldatasheet
Document overview
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Technical content
Silicon Planar Medium Power Transistor 15-Dec-2017 Rev. F Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Epitaxial Planar Die Construction. MARKING
PACKAGE INFORMATION
SOT-223 2.5K 13 inch ORDER INFORMATION MAXIMUM RATINGS (T A=25° C, unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 40 V Emitter-Base Voltage V EBO 6 V Continuous Collector Current I C 600 mA Collector Power Dissipation P D 1 W Junction and Storage Temperature T J, T STG 150, -55~150 ° C Part Number Type PZT2222A-C Lead (Pb)-free and Halogen-free SOT-223 ZT2222A A 5.90 6.70 G - 0.18 B 6.70 7.30 H 2.00 REF. C 3.30 3.80 J 0.20 0.40 D 1.42 1.90 K 1.10 REF. E 4.45 4.75 L 2.30 REF. F 0.60 0.85 M 2.80 3.20 Top View A M B D LK F G H J E C
Silicon Planar Medium Power Transistor 15-Dec-2017 Rev. F Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V (BR)CBO 75 - - V I C =10uA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 - - V I C =10mA, IB=0 Emitter-Base Breakdown Voltage V (BR)EBO 6 - - V I E=10 µA, IC =0 Collector Cut-off Current I CBO - - 10 nA V CB =60V, IE=0 Emitter Cut-off Current I CEX - - 10 nA V CE =60V, V BE(off) = -3V Collector Cut-off current I EBO - - 10 nA V EB =3V, IC =0 - - 1 V I C =500mA, I B=50mA Collector-Emitter Saturation Voltage VCE(sat) - - 0.3 V I C =150mA, I B =15mA - - 2 V I C =500mA, I B=50mA Base-Emitter Voltage V BE(sat) - - 1.2 V I C =150mA, I B=15mA 35 - - V CE =10V, I C =100uA 50 - - V CE =10V, I C =1mA 75 - - V CE =10V, I C =10mA 100 - 300 V CE =10V, I C =150mA 50 - - V CE =1V, I C =150mA DC Current Gain h FE 40 - - VCE =10V, I C =500mA Transition Frequency f T 300 - - MHz VCE =20V, I C =20mA, f=100MHz f=100MHz Collector Output Capacitance C OB - 8 - pF V CB =10V, IE=0, f=1MHz
Silicon Planar Medium Power Transistor 15-Dec-2017 Rev. F Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES