PZT194 SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO - - V IC= 100mA, IE=0 IC= 10mA, IB=0 IE= 100mA, IC=0 VCB= 60V, IE=0 VEB= C=0 IC= VCE= V, IC= VCE= V, IC= 50mA, VCB= 10 , f=1MHz,IE=0 , f=100MHz *BVCEO 60 - - V BVEBO - - V ICBO - - 100 nA IEBO - - nA *VCE(sat)1 - *VCE(sat)2 - *VBE(sat) V *VBE(on) V *hFE1 - *hFE2 300 *hFE3 - *hFE4 - fT 150 - MH Cob - - pF z Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance t 100 100 100 0.25 0.5 1.1 1.0 V 4V,I 500mA,IB=50 mA IC=1A,IB=100mA IC=1A,IB=100mA IC=1A,VCE=5V 5 1mA VCE= V, IC= 5 500mA VCE= V, IC= 5 1A VCE= V, IC= 5 2A V C Collector-Base Cutoff Current ICES - 100 nA VCES = 60V o MAXIMUM RATINGS* (Tamb =25 , unless otherwise specifie d)C o Symbol Parameter Value Collector Current (DC) 55~+150 1IC TstgTJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage V A W Storage Temperature - C O VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V Units Collector Current (Pulse) 5 1.40 1.80 Millimeter Millimeter IB Base Current 200 mA SOT-223 01-Jun-2002 Rev. A Page1 of 2 A 6.70 7.30 B 13CTYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0C 10C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 1 9 4 Date Code B C E *Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%≦≦ m
Any changing of specification will not be informed individual http://www.SeCoSGmbH.com 01-Jun-2002 Rev.A Page 2 of 2 PZT194 NPN Transistor Silicon Planar Medium Power TransistorElektronische Bauelemente