PZT1816

PZT1816 UTC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

UNISONIC TECHNOLOGIES CO., LTD PZT1816 NPN PLANAR TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 5 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R207-025.A HIGH CURRENT SWITCHIG

APPLICATIONS

„ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High f T * Fast switching speed SOT-223 „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing PZT1816L-x-AA3-R PZT1816G-x-AA3-R SOT-223 B C E Tape Reel

PZT1816 NPN PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R207-025.A „ ABSOLUTE MAXIMUM RATINGS (TA =25℃ ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 6 V DC 4 A Collector Current PULSE(Note 2) IC 8 A Power Dissipation P D 1 W Junction Temperature T J +150 °C Storage Temperature T STG -40 ~ +150 °C Note1: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Note2: Duty=1/2, Pw=20ms „ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Base Breakdown Voltage BV CBO I C =10μA, IE =0 120 V Collector Emitter Breakdown Voltage BV CEO I C =1mA, RB=∞ 100 V Emitter Base Breakdown Voltage BV EBO I E =10μA, IC=0 6 V Base-Emitter Saturation Voltage V BE(SAT) I C = 2A, IB =0.2A 0.9 1.2 V Collector-Emitter Saturation Voltage V CE(SAT) I C = 2A, IB=0.2A 150 400 mV Collector Cut-Off Current I CBO V CB = 100 V, IE =0 1 μA Emitter Cut-Off Current I EBO V EB = 4V, IC=0 1 μA hFE1 V CE = 5V, IC = 0.5A 70 400 DC Current Transfer Ratio hFE2 V CE =5V, IC = 3A 40 Transition Frequency f T V CE =10V, IC =0.5A 180 MHz Output Capacitance C ob V CB =10V, IE =0A, f =1MHz 40 pF Turn-on Time t ON See test circuit 100 ns Storage Time t STG See test circuit 900 ns Fall Time t F See test circuit 50 ns „ CLASSIFICATION of hFE1 RANK R S T Q RANGE 100 - 200 140 - 280 200 - 400 70 -140

PZT1816 NPN PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw QW-R207-025.A „ TEST CIRCUIT INPUT OUTPUT IB1 IB2 50V -5V 100µ 470µ VR RB PW=20μS Duty Cycle≒1% Ic=10, IB1= -10, IB2=2A Unit (resistance:Ω, capacitance: F)

PZT1816 NPN PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw QW-R207-025.A „ TYPICAL CHARACTERISTICS Colletcor Current,Ic( A ) Colletcor Current, Ic (A)

PZT1816 NPN PLANAR TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw QW-R207-025.A „ TYPICAL CHARACTERISTICS(Cont.) 25℃ Collector to Emitter Saturation Voltage, VCE(SAT) (mV) Base to Emitter Saturation Voltage, VBE(SAT) (V) -25℃ 25℃ Collector Dissipation, PD (W) Collector Current, IC (A) DC Operation (TA=25℃) DC Operation (Tc=2 5℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.