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Technical content
1.5A , 700V NPN Silicon Medium Power Transistor 19-Jan-2012 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
For AF driver and output stages Power switching applications CLASSIFICATION OF hFE Product-Rank PZT13003-A PZT13003-B PZT13003-C Range 8~20 15~30 25~40
PACKAGE INFORMATION
SOT-223 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage V CBO 700 V Collector-Emitter Voltage V CEO 450 V Emitter-Base Voltage V EBO 9 V Collector Current -Continuous I C 1.5 A Collector Power Dissipation P D 1.25 W Junction, Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Test Conditions Collector-base breakdown voltage V (BR)CBO 700 V I C=1mA , IE=0 Collector-emitter breakdown voltage V (BR)CEO 450 V I C=10mA, IB=0 Emitter-base breakdown voltage V (BR)EBO 9 V I E=1mA, IC=0 Collector cut-off current I CBO 0.1 mA V CB=700V, IE=0 Emitter-Base Cutoff Current I EBO 0.05 mA V EB=9V, IC=0 DC current gain h FE 8 40 V CE=10V, IC=0.5A Collector-emitter saturation voltage1 V CE(sat) 1 V I C=1A, IB=250mA Base-emitter voltage V BE(on) 1.2 V I C=1A, IB=250mA ON-Time T (on) 1 μS Storage time t S 4 μS Fall time t f 0.7 μS VCE=10V, IC=2A IB1=IB2=400mA Transition frequency f T 4 MHz V CE=10V, IC=500mA, f=1.0MHZ Top View A M B D LK F G H J E C A 6.20 6.70 G - 0.10 B 6.70 7.30 H - - C 3.30 3.70 J 0.25 0.35 D 1.42 1.90 K - - E 4.50 4.70 L 2.30 REF. F 0.60 0.82 M 2.90 3.10 SOT-223
1.5A , 700V NPN Silicon Medium Power Transistor 19-Jan-2012 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES