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Product speciﬁcation Supersedes data of June 1992 File under Discrete Semiconductors, SC15

1997 Feb 19

PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors

1997 Feb 19 2

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U

FEATURES

Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics and excellent lifetime
Multicell geometry gives good balance of dissipated power and low thermal resistance
Internal input and output prematching ensures good stability and easy broadband use.

APPLICATIONS

Common base class-B broadband amplifiers under CW conditions in military and professional applications.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. PINNING - SOT443A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to ﬂange Fig.1 Simplified outline and symbol. handbook, halfpage MAM314 Top view e c b QUICK REFERENCE DATA RF performance up to Tmb =2 5°C in a common base class-B wideband ampliﬁer. TYPE NUMBER f (GHz) VCC (V) PL (W) G p (dB) ηC (%) Zi; ZL (Ω ) PZ1418B30U 1.4 to 1.8 28 ≥27 ≥7.3 ≥38 see Figs 6 and 7 PZ1721B25U 1.7 to 2.1 28 ≥25 ≥7 ≥35 see Figs 11 and 12 PZ2024B20U 2 to 2.4 28 ≥20 ≥6 ≥35 see Figs 16 and 17 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 3

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage R BE =0 Ω− 35 V VEBO emitter-base voltage open collector − 3V IC collector current (DC) − 4A Ptot total power dissipation T mb ≤ 75 °C − 45 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Fig.2 Power derating curve as a function of mounting base temperature. handbook, 0 50 100 200 150 MGD970 Ptot (W) Tmb (°C)

1997 Feb 19 4

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U THERMAL CHARACTERISTICS Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb =2 5°C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =2 5°C in a common base class B wideband ampliﬁer. SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb thermal resistance from junction to mounting-base Tj=7 5°C 2.2 K/W R th mb-h thermal resistance from mounting-base to heatsink Tj=7 5°C; note 1 0.2 K/W SYMBOL PARAMETER CONDITIONS MAX. UNIT ICBO collector cut-off current V CB =4 0V ; IE = 0 10 mA VCB =3 0V ; IE =0 5 m A ICES collector cut-off current V CE =3 5V ; RBE = 0 50 mA IEBO emitter cut-off current V EB = 1.5 V; IC = 0 200 µA TYPE NUMBER f (GHz) VCC (V) PL (W) G p (dB) ηC (%) Zi; ZL (Ω ) PZ1418B30U 1.4 to 1.8 28 ≥27 typ. 35 ≥7.3 typ. 8.4 ≥38 typ. 45 see Figs 6 and 7 Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation (PZ1418B30U). Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity:ε r = 10. handbook, full pagewidth MGK064 input 50 Ω 100 pF (ATC) /,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, 4 5 5 2 5.5 22 0.65 6.5 8.5 0.65 12 21 4 output 50 Ω

1997 Feb 19 5

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U Fig.4 Load power as a function of input power; typical values for PZ1418B30U. Class-B operation; VCC = 28 V; Tmb =2 5°C. (1) 1.4 GHz. (2) 1.6 GHz. (3) 1.8 GHz. handbook, halfpage (1) (2) (3)PL (W) 246

0 Pi (W)

Fig.5 Load power, efficiency and VSWR as functions of frequency; typical value for PZ1418B30U. Class-B operation; VCC = 28 V; Tmb =2 5°C; Pi=5W . handbook, halfpage 1.4 1.5 1.9 PLPL (W) VSWR ηC (%) ηC f (GHz)1.6 1.7 1.8 MGL066 VSWR

1997 Feb 19 6

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U Fig.6 Input impedance as a function of frequency; typical values for PZ1418B30U. Zo =5 Ω . handbook, full pagewidth MGL024 0.2 0.5 0.2 0.5 0.2 0.5 1 2 5 10 + j − j

1.4 GHz

1.6 1.8 Fig.7 Optimum load impedance as a function of frequency; typical values for PZ1418B30U. Zo =5 Ω . handbook, full pagewidth MGL025 0.2 0.5 0.2 0.5 0.2 0.5 1 2 5 10 + j − j 1.6 5 Ω 1.8

1997 Feb 19 7

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U PZ1721B25U Microwave performance up to Tmb =2 5°C in a common base class B wideband ampliﬁer. TYPE NUMBER f (GHz) VCC (V) PL (W) G p (dB) ηC (%) Zi; ZL (Ω ) PZ1721B25U 1.7 to 2.1 28 ≥25 typ. 30 typ. 7.8 ≥35 typ. 44 see Figs 11 and 12 Fig.8 Wideband test circuit board for 1.7 to 2.1 GHz operation (PZ1721B25U). Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity:ε r = 10. handbook, full pagewidth MGK063 output 50 Ω input 50 Ω /,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/,/, /,/,/,/,/, /,/,/,/,/, /,/,/,/,/, 325 4 3 52 23 10 10 5 5 44 0.650.65 100 pF (ATC) Fig.9 Load power as a function of input power; typical values for PZ1721B25U. Class-B operation; VCC = 28 V; Tmb =2 5°C. (1) 1.7 GHz. (2) 1.9 GHz. (3) 2.1 GHz. handbook, halfpage PL (W) 246 (3) (2) (1) Fig.10 Load power, efficiency and VSWR as functions of frequency; typical values for PZ1721B25U. Class-B operation; VCC = 28 V; Tmb =2 5°C; Pi=5W . 1.7 PL (W) PL VSWR f (GHz) ηC (%) ηC MGL014 VSWR

1997 Feb 19 8

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U Fig.11 Input impedance as a function of frequency; typical values for PZ1721B25U. Zo =5 Ω . handbook, full pagewidth MGL026 0.2 0.5 0.2 0.5 0.2 0.5 1 2 5 10 + j − j 5 Ω

1.7 GHz

1.9 2.1 10 Fig.12 Optimum load impedance as a function of frequency; typical values for PZ1721B25U. Zo =5 Ω . handbook, full pagewidth MGL027 0.2 0.5 0.2 0.5 0.2 0.5 1 2 5 10 + j − j 1.9 5 Ω 2.1

1997 Feb 19 9

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U PZ2024B20U Microwave performance up to Tmb =2 5°C in a common base class B wideband ampliﬁer. TYPE NUMBER f (GHz) VCC (V) PL (W) G p (dB) ηC (%) Zi; ZL (Ω ) PZ2024B20U 2 to 2.4 28 ≥20 typ. 26 typ. 7 ≥35 typ. 42 see Figs 16 and 17 Fig.13 Wideband test circuit board for 2 to 2.4 GHz operation (PZ2024B20U). Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.635 mm. Permittivity:ε r = 10. dbook, full pagewidth /,/,/,/,/,/,/, /,/,/,/,/,/,/, /,/,/,/,/,/,/, /,/,/,/,/,/,/, /,/, /,/, /,/, /,/, /,/, /,/, /,/,/,/,/,/,/,/, /,/, /,/, /,/, /,/, /,/,/, 5.5 30 30 1.3 0.8 21.51.5 100 pF (ATC) 65.55 0.8 2 2.5 3 4 output 50 Ω input 50 Ω MSA109 Fig.14 Load power as a function of input power; typical values for PZ2024B20U. Class-B operation; VCC = 28 V; Tmb =2 5°C. handbook, halfpage PL (W) 246 2.2 2.4 f = 2 GHz Fig.15 Load power, efficiency and VSWR as functions of frequency; typical values for PZ2024B20U. Class-B operation; VCC = 28 V; Tmb =2 5°C; Pi=5W . 2.0 PL (W) VSWR f (GHz) ηC (%) ηC MGL015 VSWR PL

1997 Feb 19 10

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U Fig.16 Input impedance as a function of frequency; typical values for PZ2024B20U. Zo =5 Ω . handbook, full pagewidth MGL028 0.2 0.5 0.2 0.5 0.2 0.5 1 2 5 10 + j − j

2 GHz

2.2 2.4 Fig.17 Optimum load impedance as a function of frequency; typical values for PZ2024B20U. Zo =5 Ω . handbook, full pagewidth MGL029 0.2 0.5 0.2 0.5 0.2 0.5 1 2 5 10 + j − j 2.4 2.2 5 Ω

1997 Feb 19 11

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U PACKAGE OUTLINE handbook, full pagewidth MBC663 10.5 max 10.5 max max 16.5 3.4 3.2 3.1 4 min Y X 0.5 X 0.5 X 0.5 Y 3.5 2.9 0.1 1.7 max 6.4 max 24 max 0.5 Y seating plane Fig.18 SOT443A. Dimensions in mm. Torque on nut: max 0.5 Nm. Recommended screw: M3

1997 Feb 19 12

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Feb 19 13

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U NOTES

1997 Feb 19 14

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U NOTES

1997 Feb 19 15

Philips Semiconductors Product speciﬁcation NPN microwave power transistors PZ1418B30U; PZ1721B25U; PZ2024B20U NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Printed in The Netherlands 127147/00/02/pp16 Date of release: 1997 Feb 19 Document order number: 9397 750 01715

Product Information

PZ2024B20U specifications and overview.

Summary

NPN microwave power transistors 1997 Feb 19

Description

NPN microwave power transistors 1997 Feb 19

Source title PZ2024B20U Datasheet(PDF) - NXP Semiconductors

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