PXTA44 KEC | Alldatasheet
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Technical content
- 5. 25 1/2 SEMICONDUCTOR TECHNICAL DATA PXTA44 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 0 HIGH VOLTAGE APPLICATION.
FEATURES
hHigh Breakdown Voltage. MAXIMUM RATING (Ta=25) ELECTRICAL CHARACTERISTICS (Ta=25) *Pulse Test : Pulse Width∔300ǺS, Duty Cycle∔2.0% * : Mounted on ceramic substrate(250ɛ0.8t) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 500 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Collector Power Dissipation PC 500 mW PC* 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55q150 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100ǺA, IE=0 500 - - V Collector-Emitter Breakdown Voltage (1) V(BR)CEO IC=1mA, IB=0 400 - - V Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100ǺA, IB=0 400 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10ǺA, IC=0 6.0 - - V Collector Cut off Current (1) ICBO VCB=400V, IE=0 - - 100 nA Collector Cut off Current (2) ICES VCE=400V, IB=0 - - 500 nA Emitter Cutoff Current IEBO VEB=4V, IC=0 - - 100 nA DC Current Gain * hFE VCE=10V, IC=1mA 40 - - VCE=10V, IC=10mA 50 - 200 VCE=10V, IC=50mA 45 - - VCE=10V, IC=100mA 40 - - Collector-Emitter Saturation Voltage * VCE(sat) IC=10mA, IB=1mA - - 0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1mA - - 0.75 V
- 5. 25 2/2 PXTA44 Revision No : 0