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Technical content
Features
⚫ For Switching and Amplifier Applications. ⚫ As Complementary Type of the NPN Transistor PXT8050 is Recommended. Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 1.5 A Power Dissipation PD 1 W Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to 150 ℃
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group C D at -VCE = 1 V, - IC = 800 mA HFE 120 160 200 320 Collector Base Cutoff Current at -VCB = 40 V -ICBO - - 100 nA Collector Base Breakdown Voltage At -IC = 100 μA -V(BR)CBO 40 - - V Collector Emitter Breakdown Voltage at -IC = 0.1 mA -V(BR)CEO 25 - - V Emitter Base Breakdown Voltage at -IE = 100 μA -V(BR)EBO 6 - - V Collector Emitter Saturation Voltage at -IC = 800 mA, -IB = 80 mA -VCE(sat) - - 0.5 V Base Emitter Saturation Voltage At -IC = 800 mA, -IB = 80 mA -VBE(sat) - - 1.2 V Transition Frequency at -VCE = 10 V, -IC = 50 mA fT 100 - - MHz SOT-89 1.Base 2.Collector 3.Emitter Marking: HD
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Ordering Information
PXT8550 SOT-89 1,000PCS/T&R (7 inch) Package Outline SOT-89