PXT8050

PXT8050 SKTECHNOLGY | Alldatasheet

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Technical content

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings (T a = 25 O Parameter Symbol Value Unit Collector Base Voltage V CBO 40 V Collector Emitter Voltage V CEO 25 V Emitter Base Voltage V EBO 6 V Collector Current I C 1.5 A Power Dissipation P tot 625 mW Junction Temperature T j 150 O C Storage Temperature Range T Stg - 55 to + 150 O C Characteristics at T a = 25 O C Parameter Symbol Min. Typ. Max. Unit DC Current Gain at V CE = 1 V, I C = 5 mA at V CE = 1 V, I C = 100 mA Current Gain Group at V CE = 1 V, I C = 800 mA C D h FE h FE h FE h FE 120 160 200 300 Collector Base Cutoff Current at V CB = 35 V I CBO - - 100 nA Emitter Base Cutoff Current at V EB = 6 V I EBO - - 100 nA Collector Base Breakdown Voltage at I C = 100 µA V (BR)CBO 40 - - V Collector Emitter Breakdown Voltage at I C = 2 mA V (BR)CEO 25 - - V Emitter Base Breakdown Voltage at I E = 100 µA V (BR)EBO 6 - - V Collector Emitter Saturation Voltage at I C = 800 mA, I B = 80 mA V CE(sat) - - 0.5 V Base Emitter Saturation Voltage at I C = 800 mA, I B = 80 mA V BE(sat) - - 1.2 V Base Emitter Voltage at I C = 10 mA, V CE = 1 V V BE - - 1 V Gain Bandwidth Product at V CE = 10 V, I C = 50 mA f T 100 - - MHz Collector Base Capacitance at V CB = 10 V, f = 1 MHz C OB - 9 - pF PXT8050 1 of 3 REV.08

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