PXT4401 KEXIN | Alldatasheet
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High current (max. 600 mA) Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 5V Collector current I C 600 mA Peak collector current I CM 800 mA Peak base current I BM 200 mA Ptot 0.5 0.8 1.1 Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Rth(j-a) 250 156 113 Thermal resistance from junction to soldering point R th(j-s) 30 K/W *3 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting -- ----pad for collector 6 cm2. W K/W *1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard --- ----footprint. *2 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting- -- pad for collector 1 cm2. Thermal resistance from junction to ambient Total power dissipation
www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO IE =0 ;VCB = 60 V 50 nA Emitter cutoff current I EBO IC =0 ;VEB =6V 5 0 n A DC current gain * h FE VCE =1V ,I C = 150 mA 100 300 IC = 150 mA; IB =1 5m A 400 mV IC = 500 mA; IB =5 0m A 750 mV IC = 150 mA; IB =1 5m A 950 mV IC = 500 mA; IB =5 0m A 1.2 V Collector capacitance C c IE =i E =0 ;VCB =5V ;f=1M H z 8p F Emitter capacitance C e IC =i C =0 ;VEB = 500 mV; f = 1 MHz 30 pF Transition frequency f T IC =2 0m A ;VCE =1 0V ;f=1 0 0M H z 250 MHz Turn-on time t on 35 ns Delay time t d 15 ns Rise time t r 20 ns Turn-off time t off 250 ns Storage time t s 200 ns Fall time t f 60 ns * Pulse test: tp 300 ms; ä 0.02. VCEsat ICon = 150 mA; IBon =1 5m A ; IBoff =- 1 5m A VBEsat collector-emitter saturation voltage * base-emitter saturation voltage * PXT4401 Marking Marking 2X