PXT3906 DGNJDZ | Alldatasheet

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MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Valu e Units VCBO Coll ector-Base Voltage -40 V VCE O Coll ector-Emitter Voltage -40 V VEB O Emitter-Base V oltage -6 V IC Coll ector Current -Continuous -0.2 A PC Coll ector Power Dissipation 0.5 W SOT -89-3L . BASE COLLECTOR 3 . EMITTER TJ,Tstg Operation Junction and Storage Temperature Range -55-1 50 ℃ RθJA T hermal resistance from junction to ambient 250 ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO IC=-1 0μA,IE= 0 -40 V Co llector-emitter breakdown voltage V(B R)CEO IC=-1 mA,IB= 0 -40 V Emitter-b ase breakdown voltage V( BR)EBO IE=-1 0μA,IC=0 -6 V Co llector cut-off current ICB O CBV = -30V,IE=0 -0 .05 μA (PLWWHUcut-off current ,EBO EBV =-6 V,IC=0 -0 .05 μ A hFE(1) CEV =-1 V,IC= -0.1mA 60 hFE(2) CEV =-1 V,IC= -1mA 80 hFE(3) CEV =-1 V,IC= -10mA 100 300 hFE(4) CEV =-1 V,IC= -50mA 60 DC cu rrent gain hFE(5) CEV =-1 V,IC= -100mA 30 VCE (sat)1 IC= -10mA,IB=-1 mA -0.25 V Co llector-emitter saturation voltage VCE (sat)2 IC= -50mA,IB=-5 mA -0.4 V VBE( sat)1 IC= -10mA,IB=-1 mA -0.65 -0.85 V Bas e-emitter saturation voltage VBE( sat)2 IC= -50mA,IB=-5 mA -0.95 V T ransition frequency fT CEV = -20V,IC= -10mA,f=100MHz 250 MHz Co llector capacitance Cc CBV =-5 V,IE= 0,f=1MHz 4.5 pF Emitter cap acitance Ce V EB= -0.5V,IC= 0,f=1MHz 10 pF No ise figure NF VCE=-5 V,Ic= -0.1mA,f=10Hz-15.7kHz, RS=1 KΩ 4 dB Dela y time td 35 nS Rise time tr 35 nS S torage time tS 225 nS Fall time tf IC= -10mA , IB1=-IB2= -1mA nS OOHFWRUFXWRIIFXUUHQW ICEX CBV = -30V,VBE(off)=-3V -0. 05 μ A MARKING SO T-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/4 www.dgnjdz.com

-0.1 -1 -1 0 -100 100 200 300 -10 - 100 -10 -100 -0.1 -1 -1 -1 -10 1000 0 25 50 75 100 125 150 100 200 300 400 500 600 -0.2 -0.1 -10 -100 -1 -10 -1 -0.0 -0.4 -0.8 -1.2 -0.0 -0 -12 -15 -18 -200 fT — — IC hFE — — COMM ON EMITTER VCE=-1V -3 -30-0 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC -30 300 -30 COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=25℃ Ta=100℃ ICVCE sat — — -600 200 -3-0.3 -2 Cob Cib REVERSE VOLT AGE V (V) f=1MHz IE=0/IC=0 Ta=25℃ VCB/ VEBCob/ Cib — — CAPACITANCE C ( pF) 300 100 -3 -30 -8 VCE=-20V Ta=25℃ TRANS ITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta -200 VBEIC — — -30 Ta=25℃ Ta=100℃ COMM ON EMITTER VCE=-1V COLLECTOR CURRENT IC (mA) BASE-EM MITER VOLTAGE VBE (V) -30-3 β=10 BASE-EMIT TER SATURATION VOLTAGE VBEsa t (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ -20 ICVBE sat — — S tatic Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -80uA -72uA -64uA -56uA -48uA -40uA -32uA -24uA -16uA IB=-8uA CO MMON EMITTER Ta=25℃ Ty pical Characteristics Dongguan Nanjing Electronics Ltd. 2/4 www.dgnjdz.com

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com

Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com