PXT2907A DGNJDZ | Alldatasheet

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Technical content

-89-3L BASE 2. COLLECTOR 3. EMITTER PXT2907A TRANSIST OR (PNP)

FEATURES

z Switching and Linear Amplification z High Current and Low Voltage z Complement to PXT2222A MARKING:p2F MAXIMUM RATINGS (Ta=25℃ unless other wise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified) Parameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(B R)CBO I C=-1 mA,IE= 0 -60 V Co llector-emitter breakdown voltage V(B R)CEO IC= -10mA,IB= 0 -60 V Emitter-b ase breakdown voltage V( BR)EBO I E=-1 mA,IC=0 -5 V Co llector cut-off current ICB O V CB= -50V,IE=0 -0 .01 µA Emitter cut-off current IEBO V EB=-5 V,IC=0 -0 .01 µA VCE= -10V, IC= -0.1mA 75 VCE= -10V, IC= -1mA 100 VCE= -10V, IC= -10mA 100 VCE= -10V, IC= -150mA 100 300 DC cu rrent gain hFE VCE= -10V, IC= -500mA 50 IC= -500mA,IB= -50mA -1.6 V Co llector-emitter saturation voltage VCE (sat) IC= -150mA,IB=- 15mA -0.4 V IC= -500mA,IB= -50mA -2.6 V Bas e-emitter saturation voltage VBE( sat) IC= -150mA,IB=- 15mA -1.3 V Dela y time td 12 ns Rise time tr 30 ns S torage time ts 300 ns Fall time tf VCC= -30V, IC= -150mA, I B1=- IB2= -15mA 65 ns T ransition frequency fT V CE= -10V,IC= -20mA, f=100MHz 200 MHz Symbol Para meter Value Unit VCBO Coll ector-Base Voltage -60 V VCE O Coll ector-Emitter Voltage -60 V VEB O Emitter-Base V oltage -5 V IC Coll ector Current -600 mA PC Coll ector Power Dissipation 500 mW RθJA T hermal Resistance From Junction To Ambient 250 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~ +150 w ww.dgnjdz.com 1/4 All data s heet.com

-100 -200 -300 -400 -500 -600 .1 -1 -10 100 -0 -2 0 -40 -60 -80 -100 100 200 300 400 500 10 -100 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 -1 -1 0 -100 -200 -400 -600 -800 -1000 -1 -1 0 -100 -200 -400 -600 -800 -50 -100 -150 -200 -250 -300 -350 -400 VCE=- 10V Ta=25℃ Ta=100 o C BASE- EMITTER VOLTAGE VBE(mV COLLECTOR CURRENT IC (m IC — — V BE f=1M Hz IE=0 / IC=0 Ta=25 o C REVERSE VO LTAGE V (V) CAPACIT ANCE C (pF) VCB / VEBCob / Cib — — Cib Cob TRA NSITION FREQUENCY fT (MHz COLLECTOR CURRENT I (m VCE=- 10V Ta=25 o C IC fT — -600-600 VCE= - 10V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE —— CO LLECTOR POWER DISSIPATION Pc (W) AM BIENT TEMPERATURE Ta ( Pc — — T a COLLECTOR CURRENT IC (m BASE- EMITTER SATURATION VOLTAGE VBEs at (mV) Ta=25℃ Ta=100℃ β=10 ICVB Esat —— Ta=25℃ Ta=100℃ β=10 VC Esat — — I C COLLECTOR-EMITTER SATURATION VO LTAGE VCE sat (mV) COLLECTOR CURRENT IC (m C OMMON EMITTER Ta=25℃ mA .8mA .6mA .4mA .2mA mA .8mA .6mA .4mA IB=- 0.2mA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) S tatic Characteristic T ypical Characteristics w ww.dgnjdz.com 2/4 All data s heet.com

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0. 400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout .500 .400 .8000 .900 .950 .300 .700 .600 .200 45° w ww.dgnjdz.com 3/4 All data s heet.com

w ww.dgnjdz.com 4/4 All data s heet.com