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SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN)

FEATURES

z Epitaxial planar die construction z MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Max Unit Collector-base breakdown voltage V(BR)CBO I C= 10μ A,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO I C= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO I E=10μA, IC=0 6 V Collector cut-off current ICBO V CB=60V, I E=0 0. 01 μA Emitter cut-off current IEBO V EB= 5V , IC=0 0. 01 μA hFE(1) V CE=10V, IC= 0.1mA 35 hFE(2) V CE=10V, IC= 1mA 50 hFE(3) V CE=10V, IC= 10mA 75 hFE(4) V CE=10V, IC= 150mA 100 300 hFE(5) V CE=1V, IC= 150mA 50 DC current gain hFE(6) V CE=10V, IC= 500mA 40 VCE(sat) I C=500mA, IB= 50mA 1 V Collector-emitter saturation voltage VCE(sat) I C=150mA, IB=15mA 0.3 V VBE(sat) I C=500mA, IB=50mA 2.0 V Base-emitter saturation voltage VBE(sat) I C=150mA, IB=15mA 0.6 1.2 V Transition frequency fT VCE=10V, IC=20mA f=100MHz 300 MHz Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF Delay time td 10 ns Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 25 ns Storage time tS 225 ns Fall time tf VCC=30V, IC=150mA IB1=- IB2= 15mA 60 ns SOT-89 BASE COLLECTOR EMITTER PXT2222A 2012-0 WILLAS ELECTRONIC CORP.

0.1 100 11 0 1 00 300 600 900 1200 0 25 50 75 100 125 150 100 200 300 400 500 600 1 10 100 100 1000 11 0 1 00 100 1000 0.1 1 10 100 02468 1 0 1 2 1 4 1 6 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 100 COMMON EMITTER VCE= 10V VBEIC —— BESE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA) T a=25℃ Ta=1 00℃ 600 β=10 IC VBEsat —— BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURREMT IC (mA) Ta=100 ℃ Ta=25℃ 600 PC —— Ta AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (mW) Ta=100 ℃ Ta=25℃ β=10 IC VCEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURREMT IC (mA) 600 Typical Characteristics IChFE —— Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER V CE= 10V 600 f=1MHz I E=0/IC=0 Ta=25 ℃ VCB/VEBCob/Cib —— Cob Cib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COMMON EMITTER T a=25℃ 1mA 900uA 800uA 700uA 600uA 500uA 400uA 300uA 200uA IB= 100uA COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic COMMON EMITTER VCE=10V Ta=25℃ COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) 500 ICfT —— 2012-0 WILLAS ELECTRONIC CORP. SOT-89 Plastic-Encapsulate Transistors PXT2222A

Dimensions in inches and (millimeters) SOT-89 Rev.C .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061REF (1.55)REF .023(0.58) .016(0.40) .060TYP (1.50)TYP .118TYP (3.0)TYP .197(0.52) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012-0 WILLAS ELECTRONIC CORP. SOT-89 Plastic-Encapsulate Transistors PXT2222A