PXT2222A SKTECHNOLGY | Alldatasheet

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Technical content

SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN)

FEATURES

z Epitaxial planar die construction z Complementary PNP Type available(PXT2907A) MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 75 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 800 mA P C Collector Power Dissipation 0.5 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Max U nit Collector-base breakdown voltage V (BR)CBO I C = 10μ A,I E =0 75 V Collector-emitter breakdown voltage V (BR)CEO I C = 10mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current I CBO V CB =60V, I E =0 0. 01 μA Emitter cut-off current I EBO V EB = 5V , I C =0 0. 01 μA h FE(1) V CE =10V, I C = 0.1mA 35 h FE(2) V CE =10V, I C = 1mA 50 h FE(3) V CE =10V, I C = 10mA 75 h FE(4) V CE =10V, I C = 150mA 100 300 h FE(5) V CE =1V, I C = 150mA 50 DC current gain h FE(6) V CE =10V, I C = 500mA 40 V CE(sat) I C =500mA, I B = 50mA 1 V Collector-emitter saturation voltage V CE(sat) I C =150mA, I B =15mA 0.3 V V BE(sat) I C =500mA, I B =50mA 2.0 V Base-emitter saturation voltage V BE(sat) I C =150mA, I B =15mA 0.6 1.2 V Transition frequency f T V CE =10V, I C =20mA f=100MHz 300 MHz Output Capacitance C ob V CB =10V, I E = 0,f=1MHz 8 pF Delay time t d 10 ns Rise time t r V CC =30V, I C =150mA V BE(off) =0.5V,I =15mA 25 n s Storage time t S 225 ns Fall time t f V CC =30V, I C =150mA I =- I = 15mA 60 ns SOT-89 BASE COLLECTOR EMITTER MARKING: 1P -3 L -3 L PXT2222A 1 of 3 REV.08

0.1 100 11 0 100 300 600 900 1200 0 25 50 75 100 125 150 100 200 300 400 500 600 1 10 100 100 1000 11 0 100 100 1000 0.1 1 10 100 02468 1 0 1 2 1 4 1 6 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 100 COMMON EMITTER V CE = 10V V BE I C — — BESE-EMMITER VOLTAGE V BE (mV) COLLECTOR CURRENT I C (mA) T a =25 T a 600 β=10 I C V BEsat — — BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURREMT I C (mA) T a =100 T a =25 800 P C — — T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (mW) T a =100 T a =25 β=10 I C V CEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURREMT I C (mA) 800 I C h FE — — T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = 10V 800 f=1MHz I E =0/I C T a =25 V CB EB C ob ib — — C ob C ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COMMON EMITTER T a =25 1mA 900uA 800uA 700uA 600uA 500uA 400uA 300uA 200uA I B = 100uA COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic COMMON EMITTER V CE =10V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) 500 I C f T — — PXT2222A 2 of 3 REV.08

A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. SOT-89-3LSuggested Pad Layout PXT2222A 3 of 3 REV.08