PXT2222A KEXIN | Alldatasheet

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High current (max. 600 mA) Low voltage (max. 40 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 60 V Collector-emitter voltage V CEO 40 V Emitter-base voltage V EBO 6V Collector current I C 100 mA Peak collector current I CM 200 mA Peak base current I BM 100 mA Ptot 0.5 0.8 1.1 Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Rth(j-a) 250 156 113 Thermal resistance from junction to soldering point R th(j-s) 30 K/W *3 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting -- ----pad for collector 6 cm2. W K/W *1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard --- ----footprint. *2 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting- -- pad for collector 1 cm2. Total power dissipation Thermal resistance from junction to ambient

www.kexin.com.cn PXT2222A Marking Marking 1P Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB =6 0V 1 0 n A IE =0 ;VCB =6 0V ;Tj = 125 10 ìA Emitter cutoff current I EBO IC =0 ;VEB =5V 1 0 n A IC =0 . 1m A ;VCE = 10V 35 IC =1m A ;VCE =1 0V 5 0 IC =1 0m A ;VCE =1 0V 7 5 IC =1 0m A ;VC =1 0V ;Tj =- 5 5 35 IC =1 5 0m A ;VCE =1V 5 0 VCE =1 0V ,IC = 150 mA 100 300 IC =5 0 0m A ;VCE =1 0V 4 0 IC =1 5 0m A ;IB =1 5m A 300 mV IC =5 0 0m A ;IB =5 0m A 1V IC =1 5 0m A ;IB =1 5m A 0.6 1.2 V IC =5 0 0m A ;IB =5 0m A 2V Collector capacitance C c IE =i E =0 ;VCB =1 0V ;f=1M H z 8p F Emitter capacitance C e IC =i C =0 ;VEB =5 0 0m V ;f=1M H z 25 pF Transition frequency f T IC =2 0m A ;VCE =1 0V ;f=1 0 0M H z 300 MHz Noise figure F IC =2 0 0ì A ;VCE =5V ;R S =2k Ù ; f=1k H z ;B=2 0 0H z 4d B Turn-on time t on 35 ns Delay time t d 15 ns Rise time t r 20 ns Turn-off time t off 250 ns Storage time t s 200 ns Fall time t f 60 ns ICBOCollector cutoff current DC current gain h FE VCEsat ICon = 150 mA; IBon =1 5m A ; IBoff =- 1 5m A VBEsat collector-emitter saturation voltage base-emitter saturation voltage