PIMZ2 PHILIPS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

  1. Product profile

1.1 General description

NPN/PNP general-purpose double transistors.

1.2 Features

■ Simplified circuit design ■ Reduced component count ■ Reduced pick and place costs.

1.3 Applications

■ General-purpose switching and amplification.

1.4 Quick reference data

PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors Rev. 05 — 24 November 2004 Product data sheet Table 1: Product overview Type number Package Configuration Philips JEITA PIMZ2 SOT457 SC-74 NPN/PNP double transistors PUMZ2 SOT363 SC-88 NPN/PNP double transistors Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IC collector current (DC) - - 150 mA

9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 05 — 24 November 2004 2 of 9 Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China Table 3: Pinning Pin Description Simplified outline Symbol PIMZ2 (SOT457) 1 collector TR2 2 emitter TR2 3 collector TR1 4 emitter TR1 5 base TR1 6 base TR2 PUMZ2 (SOT363) 1 emitter TR1 2 base TR1 3 base TR2 4 collector TR2 5 emitter TR2 6 collector TR1 SOT457 13 2 456 sym082 13 2 456 TR1 TR2 SOT363 13 2 456 sym083 13 2 TR1 456 TR2 Table 4: Ordering information Type number Package Name Description Version PIMZ2 SC-74 plastic surface mounted package; 6 leads SOT457 PUMZ2 SC-88 plastic surface mounted package; 6 leads SOT363 Table 5: Marking codes Type number Marking code[1] PIMZ2 M6 PUMZ2 GZ*

9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 05 — 24 November 2004 3 of 9 Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors 5. Limiting values [1] Device mounted on an FR4 printed-circuit board. 6. Thermal characteristics [1] Device mounted on an FR4 printed-circuit board. Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor; for the PNP transistor with negative polarity V CBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 7 V IC collector current (DC) - 150 mA ICM peak collector current - 200 mA IBM peak base current - 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT457 [1] - 200 mW SOT363 [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Per device P tot total power dissipation Tamb ≤ 25 °C SOT457 [1] - 300 mW SOT363 [1] - 300 mW Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R th(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT457 [1] - - 625 K/W SOT363 [1] - - 694 K/W Per device R th(j-a) thermal resistance from junction to ambient Tamb ≤ 25 °C SOT457 [1] - - 417 K/W SOT363 [1] - - 417 K/W

9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 05 — 24 November 2004 4 of 9 Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors 7. Characteristics Table 8: Characteristics Tamb = 25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity; unless otherwise specified I CBO collector-base cut-off current VCB =6 0V ; IE = 0 A - - 100 nA VCB =6 0V ; IE = 0 A; Tj= 150°C --5 0 µA IEBO emitter-base cut-off current VEB =7V ; IC = 0 A - - 100 nA hFE DC current gain V CE =6V ; IC = 1 mA 120 250 560 TR1 (PNP) V CEsat collector-emitter saturation voltage IC = −50 mA; IB = −5m A - - −500 mV fT transition frequency I E = −2 mA; VCE = −12 V; f = 100 MHz - 190 - MHz C c collector capacitance I E =ie = 0 A; VCB = −12 V; f = 1 MHz - 2.3 5 pF TR2 (NPN) V CEsat collector-emitter saturation voltage IC = 50 mA; IB = 5 mA - - 250 mV fT transition frequency I E = 2 mA; VCE = 12 V; f = 100 MHz 100 - - MHz C c collector capacitance I E =ie = 0 A; VCB =1 2V ; f=1M H z - - 3 p F

9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 05 — 24 November 2004 5 of 9 Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors 8. Package outline Fig 1. Package outline SOT457 (SC-74) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT457 SC-74 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y scale c X 13 2 456 0 1 2 mm Plastic surface mounted package; 6 leads SOT457 UNIT A 1 bp cD E H E Lp Qy wv mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.6 0.2 0.33 0.23 A 1.1 0.9 01-05-04 04-11-08

9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 05 — 24 November 2004 6 of 9 Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors Fig 2. Package outline SOT363 (SC-88) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT363 SC-88 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y 0 1 2 mm scale c X 13 2 456 Plastic surface mounted package; 6 leads SOT363 UNIT A 1 max bp cD E e1 H E Lp Qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 97-02-28 04-11-08

9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 05 — 24 November 2004 7 of 9 Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors 9. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PIMZ2_PUMZ2_5 20041124 Product data sheet - 9397 750 13966 PIMZ2_PUMZ2_4 Modifications:

  • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors.
  • Table3 PUMZ2 symbol drawing amended
  • Table5 PIMZ2 marking code and PUMZ2 table note amended PIMZ2_PUMZ2_4 20031217 Product specification - 9397 750 12385 PIMZ2_2 PIMZ2_2 20030714 Product specification - 9397 750 11659 PIMZ2_1 PIMZ2_1 20030602 Objective specification - 9397 750 11456 -

Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors 9397 750 13966 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 05 — 24 November 2004 8 of 9 10. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

© Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 November 2004 Document number: 9397 750 13966 Published in The Netherlands Philips Semiconductors PIMZ2; PUMZ2 NPN/PNP general-purpose double transistors 14. Contents