PUMF11 PHILIPS | Alldatasheet

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Product specification 2002 Apr 09 DISCRETE SEMICONDUCTORS PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor book, halfpage MBD128

2002 Apr 09 2

Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11

FEATURES

  • Resistor-equipped transistor and general purpose transistor in one package
  • 100 mA collector current
  • 50 V collector-emitter voltage
  • 300 mW total power dissipation
  • SOT363 package; replaces two SOT323 (SC-70) packaged devices on same PCB area
  • Reduced pick and place costs.

APPLICATIONS

  • Power management switch for portable equipment, e.g. cellular phone and CD player
  • Switch for regulator.

DESCRIPTION

NPN resistor-equipped transistor and a PNP general purpose transistor in a SOT363 (SC-88) plastic package. MARKING Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. TYPE NUMBER MARKING CODE (1) PUMF11 R1 ∗ PINNING PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 654 123 TR1 TR2 MAM465 13 2 456 Top view Fig.1 Simplified outline (SOT363) and symbol. MBK120 2, 5 6, 3 1, 4 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT TR1 (NPN) VCEO collector-emitter voltage 50 V IO output current (DC) 100 mA R1 bias resistor 22 k Ω R2 bias resistor 47 k Ω TR2 (PNP) VCEO collector-emitter voltage 50 V IC collector current (DC) 100 mA ICM peak collector current 200 mA

2002 Apr 09 3

Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor Ptot total power dissipation T amb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C TR1 (NPN) VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V Vi input voltage positive − +40 V negative −− 10 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA TR2 (PNP) VCBO collector-base voltage open emitter −− 50 V VCEO collector-emitter voltage open base −− 40 V VEBO emitter-base voltage open collector −− 5V IC collector current (DC) −− 100 mA ICM peak collector current −− 200 mA Per device Ptot total power dissipation T amb ≤ 25 °C; note 1 − 300 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air; note 1 416 K/W

2002 Apr 09 4

Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 CHARACTERISTICS Tamb =2 5°C unless otherwise specified. Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT TR1 (NPN) ICBO collector-base cut-off current VCB =5 0V ; IE =0 −− 100 nA ICEO collector-emitter cut-off current VCE =3 0V ; IB =0 −− 1 µA VCE =3 0V ; IB = 0; Tj= 150°C −− 50 µA IEBO emitter-base cut-off current V EB =5V ; IC =0 −− 0.12 mA hFE DC current gain V CE =5V ; IC = 5 mA 80 −− VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA −− 150 mV Vi(off) input off voltage V CE =5V ; IC = 100µA − 0.9 0.5 V Vi(on) input on voltage V CE = 0.3 V; IC = 2 mA 2 1.1 − V R1 input resistor 15.4 22 28.6 k Ω resistor ratio 1.7 2.1 2.6 C c collector capacitance V CB =1 0V ; IE =ie = 0; f = 1 MHz −− 2.5 pF TR2 (PNP) ICBO collector-base cut-off current VCB = −30 V; IE =0 −−− 100 nA ICEO collector-emitter cut-off current VCB = −30 V; IB = 0; Tj= 150°C −−− 10 µA IEBO emitter-base cut-off current V EB = −4 V; IC =0 −−− 100 nA hFE DC current gain V CE = −6 V; IC = −1 mA 120 −− VCEsat saturation voltage I C = −50 mA; IB = −5 mA; note 1 −−− 200 mV C c collector capacitance V CB = −12 V; IE =ie = 0; f = 1 MHz −− 2.2 pF fT transition frequency V CE = −12 V; IC = −2 mA; f = 100 MHz 100 −− MHz

APPLICATION INFORMATION

handbook, halfpage R BE(ext) R B(ext) MHC182 Fig.3 Typical power management circuit.

2002 Apr 09 5

Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT363 SC-88 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y 0 1 2 mm scale c X 13 2 456 Plastic surface mounted package; 6 leads SOT363 UNIT A 1 max bp cD E e1 H E Lp Qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 97-02-28

2002 Apr 09 6

Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2002 Apr 09 7

Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 NOTES

© Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands 613514/01/pp8 Date of release:2002 Apr 09 Document order number: 9397 750 09388