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Product specification 2001 Sep 19 DISCRETE SEMICONDUCTORS PUMB3 PNP resistor-equipped double transistor; R1 = 4.7 kΩ dbook, halfpage MBD128

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Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3

FEATURES

  • Transistors with built-in bias resistor R1 (typ. 4.7 kΩ )
  • No mutual interference between the transistors
  • Simplification of circuit design
  • Reduces number of components and board space.

APPLICATIONS

  • General purpose switching and amplification
  • Inverter and interface circuits
  • Circuit driver.

DESCRIPTION

PNP resistor-equipped double transistor in an SC-88 (SOT363) plastic package. MARKING Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. PINNING TYPE NUMBER MARKING CODE (1) PUMB3 B5* PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage MAM344 13 2 456 Top view 654 123 TR1 TR2 Fig.1 Simplified outline (SC-88; SOT363) and symbol. MBK120 2, 5 6, 3 1, 4 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage−50 V ICM peak collector current −100 mA TR1 PNP −− TR2 PNP −− R1 bias resistor 4.7 k Ω

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Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter −− 50 V VCEO collector-emitter voltage open base −− 50 V VEBO emitter-base voltage open collector −− 10 V VI input voltage positive − +10 V negative −− 40 V IO output current (DC) −− 100 mA ICM peak collector current −− 100 mA Ptot total power dissipation T amb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation T amb ≤ 25 °C; note 1 − 300 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 416 K/W

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Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3 CHARACTERISTICS Tamb =2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ICBO collector-base cut-off current VCB = −50 V; IE =0 −−− 100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB =0 −−− 1 µA VCE = −30 V; IB = 0; Tj= 150°C −−− 50 µA IEBO emitter-base cut-off current V EB = −5 V; IC =0 −−− 100 nA hFE DC current gain V CE = −5 V; IC = −1 mA 200 −− VCEsat saturation voltage I C = −5 mA; IB = −0.25 mA −−− 100 mV R 1 input resistor 3.3 4.7 6.1 k Ω C c collector capacitance I E =ie = 0; VCB = −10 V; f = 1 MHz −− 3p F handbook, halfpage 103 102 MHB969 -10-1 -1 IC (mA) hFE -10 -102 (1) (2) (3) Fig.3 DC current gain as a function of collector current; typical values. VCE = −5V . (1) Tamb = 100°C. (2) Tamb =2 5°C. (3) Tamb = −40 °C. handbook, halfpage -103 -102 -10 MHB968 -10-1 -1 IC (mA) VCEsat (mV) -10 -102 (1) (2) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. IC /IB = 20. (1) Tamb = 100°C. (2) Tamb =2 5°C. (3) Tamb = −40 °C.

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Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT363 SC-88 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y 0 1 2 mm scale c X 13 2 456 Plastic surface mounted package; 6 leads SOT363 UNIT A 1 max bp cD E e1 H E Lp Qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 97-02-28

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Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

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Philips Semiconductors Product specification PNP resistor-equipped double transistor; R1 = 4.7 kΩ PUMB3 NOTES

© Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands 613514/01/pp8 Date of release:2001 Sep 19 Document order number: 9397 750 08541