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Document overview

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Technical content

Features

■ 15 kA, 8/20 µs surge capability ■ Low clamping voltage under surge ■ Bidirectional TVS ■ Surface mount package ■ Excellent performance over temperature ■ UL Recognized

Applications

■ High power DC bus protection Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) PTVS15-xxxC-SH Series High Current TVS Diodes *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. Rating Symbol Value Unit Repetitive Standoff Voltage PTVS15-058C-SH PTVS15-076C-SH VWM 76 V Peak Current Rating per 8/20 μs IEC 61000-4-5 I PPM 15 kA Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range T S -55 to +150 °C General Information The PTVS15-xxxC-SH range of high current bidirectional TVS diodes is designed for use in high power DC bus clamping applications. These devices offer bidirectional port protection and are available with standoff voltage ratings of 58 V and 76 V. The devices are RoHS* compliant and UL Recognized. They also meet IEC 61000-4-5 8/20 μs current surge requirements. *RoHS COMPLIANT Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Test Conditions Min. Typ. Max. Unit ID Standby Current VD = VWM 10 μA V(BR) Breakdown Voltage IBR = 10 mA PTVS15-058C-SH PTVS15-076C-SH 95 V V C Clamping Voltage (1) IPP = 15 kA PTVS15-058C-SH PTVS15-076C-SH 110 150 V V (BR) Temperature Coeffi cient 0.1 %/°C C Capacitance F = 10 kHz, V d = 1 Vrms PTVS15-058C-SH PTVS15-076C-SH 9 nF Asia-Pacifi c: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com (1) VC measured at the time which is coincident with the peak surge current. Agency Approval

Description

UL File Number: E313168

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. 3312 - 2 mm SMD Trimming Potentiometer Product Dimensions PTVS15-xxxC-SH Series High Current TVS Diodes DIMENSIONS: MM (INCHES) This is a Pb free product, with epoxy encapsulations meeting UL Class 94V-0. Ag plated leads meet solderability requirements of JESD22-B102. Package dimensions are shown below. How to Order PTVS 15 - xxx C - S H Series PTVS = Power TVS High Current Diode Peak Current Rating 15 = 15 kA Repetitive Standoff Voltage 058 = 58 V 076 = 76 V Suffi x C = Bidirectional Device Package S = Surface Mount Temperature H = High Temperature Series Application A typical application for Power TVS products includes DC power line protection. Exposed DC Power Interface 16.00 (.630) MAX. D 2.00 (.079) MIN. 2.00 (.079) MIN. 16.00 (.630) MAX. 21.00 ± 0.50 (.827 ± .020) 2.80 ± 0.20 (.110 ± .0008) 0.50 ± 0.05 (.020 ± .002) 10.00 ± 0.20 (.827 ± .0008) 11.00 (.433) 15.00 (.591) 3.5 (.138) Recommended Printed Wiring Land Pattern Dimensions Typical Part Marking Device Dimension D PTVS15-058C-SH 11.00 Max.(0.433) PTVS15-076C-SH 12.00 Max.(0.472)

Specifi cations are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specifi c applications. 3312 - 2 mm SMD Trimming Potentiometer PTVS15-xxxC-SH Series High Current TVS Diodes Performance Graphs V-I Characteristic Typical VBR vs. Junction Temperature Typical Surge Current Derating Current 8/20 µs Waveform per IEC 61000-4-5 This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 µs current waveform per the IEC 61000-4-5 specifi cation. This device is not intended for continuous operation at temperatures above 125 °C. 120 0 25 50 10075 125 150 175 Ambient Temperature (°C) Percent of Rated Value 110 100 100 120 03 0 25 2015 105 IPP – Peak Pulse Current (% of IPP) t – Time (µs) Test Waveform Parameters tt = 8 µs td = 20 µs tt et td = t|IPP/2 Percent of VBR Change -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) - °C 25 °C