TVS1400 TI1 | Alldatasheet
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ADVANCE□INFORMATION Protected IC IN GND Power Rail Connector Copyright © 2017, Texas Instruments Incorporated TVS1400 Product Folder Order Now T echnical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. ADVANCE INFORMATION for pre-production products; subject to change without notice. TVS1400 SLVSED3 –DECEMBER 2017 TVS140014-VFlat-ClampSurgeProtectionDevice
1 Features
1• Ultra-Low and Flat Clamping Voltage – 18.6 V at 45 A (8/20 µs) – RDYN: 30 mΩ
- Standoff Voltage: 14 V
- Survives 10,000 Strikes of 35 A 8/20 μs Surge Pulses at 125°C
- Robust Surge Protection: – IEC61000-4-5 (8/20 µs): 40 A – Protection Against 1 kV, 42 Ω IEC 61000-4-5 Surge Pulses – IEC61643-321 (10/1000 µs): 8 A
- Low Leakage Current – 2 nA at 27°C – 20 nA at 85°C
- Low Capacitance: 125 pF
- Peak Pulse Power: – IEC61000-4-5 (8/20 µs): 800 W – IEC61643-321 (10/1000 µs): 150 W
- IEC 61000-4-2 Level 4 ESD Protection – ±11-kV Contact Discharge – ±30-kV Air Gap Discharge
- IEC 61000-4-4 EFT Protection – 80 A (5/50 ns)
- Industrial Temperature Range: –40°C to +125°C
- Compact Package – 6-Pin SON Package (2 mm × 2 mm)
2 Applications
- Industrial Sensor I/O
- Solid State Drives
- PLC I/O Modules
- 12 V Power Lines
- Appliances
- Medical Equipment
3 Description
The TVS1400 Flat-Clamp diode is a transient voltage suppressor which provides robust protection for circuits exposed to high transient voltage events. The IC is designed to protect against 45 A of IEC61000-4- 5 surge current, robustly protecting systems in harsh industrial environments. Unlike traditional TVS diodes, the TVS1400 regulates with a feedback mechanism to ensure precise flat clamping protection below 20 V during a fault. The lower clamping enables a unique protection solution that can significantly lower the voltage a system is exposed during a surge event. This allows designers to confidently select downstream system components with a lower voltage rating, lower system costs and complexity without sacrificing robustness. In addition, the TVS1400 ultra low leakage and low capacitance enable an input protection stage that has less effect on system operation than traditional TVS diodes. Typical leakage of 2 nA at 14 V is smaller than comparable conventional technology, assuring low power dissipation. The device capacitance of 125 pF is also much lower than typical TVS diodes, lowering distortion on sensitive analog input signals and increasing system flexibility. The TVS1400 is available in a small 2×2 SON footprint which is ideal for space constrained applications, offering a 70 percent reduction in size compared to industry standard SMA and SMB packages. The unique precision surge technology allows the TVS1400 to dissipate large surge currents even in a small package, helping system designers save space without sacrificing robustness. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) TVS1400 SON (6) 2.00 mm × 2.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. System Diagram
ADVANCE□INFORMATION TVS1400 SLVSED3 –DECEMBER 2017 www.ti.com Product Folder Links: TVS1400 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Table of Contents
12.1 Receiving Notification of Documentation Updates 12
13 Mechanical, Packaging, and Orderable
4 Revision History
December 2017 * Initial release.
ADVANCE□INFORMATION TVS1400 www.ti.com SLVSED3 –DECEMBER 2017 Product Folder Links: TVS1400 Submit Documentation FeedbackCopyright © 2017, Texas Instruments Incorporated
5 Device Comparison Table
DEVICE Vrwm Vclamp at Ipp Ipp (8/20 µs) Vrwm leakage (nA) POLARITY TVS0500 5 9.2 45 0.3 Unidirectional TVS1400 14 18.6 45 2 Unidirectional TVS1800 18 22.8 40 0.3 Unidirectional TVS2200 22 27.7 40 3.2 Unidirectional TVS2700 27 32.5 40 1.7 Unidirectional TVS3300 33 38 35 19 Unidirectional
ADVANCE□INFORMATION IN IN GNDGND GND IN GND TVS1400 SLVSED3 –DECEMBER 2017 www.ti.com Product Folder Links: TVS1400 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
6 Pin Configuration and Functions
NAME No. IN 4, 5, 6 I ESD and surge protected channel GND 1, 2, 3, exposed thermal pad GND Ground
ADVANCE□INFORMATION TVS1400 www.ti.com SLVSED3 –DECEMBER 2017 Product Folder Links: TVS1400 Submit Documentation FeedbackCopyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
TA = 27℃ (unless otherwise noted)(1) MIN MAX UNIT Maximum Surge IEC61000-4-5 Current (8/20 µs) 45 A IEC 61000-4-5 Power (8/20 µs) 800 W IEC 61643-321 Current (10/1000 µs) 8 A IEC 61643-321 Power (10/1000 µs) 150 W Maximum Forward Surge IEC 61000-4-5 Current (8/20 µs) 50 A IEC 61000-4-5 Power (8/20 µs) 80 W IEC 61643-321 Current (10/1000 µs) 8 A IEC 61643-321 Power (10/1000 µs) 150 W EFT IEC 61000-4-4 EFT Protection 80 A Ibr DC Breakdown current 30 mA If DC Forward Current 500 mA TA Ambient Operating Temperature –40 125 °C Tstg Storage Temperature –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings — JEDEC
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
7.3 ESD Ratings — IEC
V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±11 kV IEC 61000-4-2 air-gap discharge ±30 (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
7.4 Thermal Information
THERMAL METRIC(1) DRV (SON) UNIT PINS RqJA Junction-to-ambient thermal resistance 70.4 °C/W RqJC(top) Junction-to-case (top) thermal resistance 73.7 °C/W RqJB Junction-to-board thermal resistance 40 °C/W YJT Junction-to-top characterization parameter 2.2 °C/W YJB Junction-to-board characterization parameter 40.3 °C/W RqJC(bot) Junction-to-case (bottom) thermal resistance 11 °C/W
ADVANCE□INFORMATION TVS1400 SLVSED3 –DECEMBER 2017 www.ti.com Product Folder Links: TVS1400 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
7.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reverse Stand-off Voltage 14 V ILEAK Leakage Current Measured at VIN = Vrwm TA = 27°C 2 TBD nA ILEAK Leakage Current Measured at VIN = Vrwm TA = 85°C 20 TBD nA ILEAK Leakage Current Measured at VIN = Vrwm TA = 105°C TBD TBD nA VF Forward Voltage IIN = 1 mA from GND to IO 0.5 V VBR Break-down Voltage IIN = 1 mA from IO to GND TBD 16.8 TBD V VFCLAMP Forward Clamp Voltage 45 A IEC 61000-4-5 Surge (8/20 µs) from GND to IO, 27°C 1 4 5 V VCLAMP Clamp Voltage
24 A IEC 61000-4-5 Surge (8/20 µs)
from IO to GND, VIN = 0 V before surge, 27°C
17.5 TBD V
45 A IEC 61000-4-5 Surge (8/20 µs)
from IO to GND, VIN = 0 V before surge, 27°C
18.6 TBD V
35 A IEC 61000-4-5 Surge (8/20 µs)
from IO to GND, VIN = Vrwm before surge, TA = 125°C
18.5 TBD V
RDYN 8/20 µs surge dynamic resistance Calculated from VCLAMP at 0.5 × Ipp and Ipp surge current levels, 27°C 30 mΩ CIN Input pin capacitance VIN = 14 V, f = 1 MHz, 30 mVpp, IO to GND 125 pF SR Maximum Slew Rate 0-Vrwm rising edge, measure slew rate when Ipk = 1 mA, 27°C 2.5 V/µs SR Maximum Slew Rate 0-Vrwm rising edge, measure slew rate when Ipk = 1 mA, 105°C 0.7 V/µs
ADVANCE□INFORMATION Voltage Level Detection Power FET Driver IN GND Copyright © 2017, Texas Instruments Incorporated TVS1400 www.ti.com SLVSED3 –DECEMBER 2017 Product Folder Links: TVS1400 Submit Documentation FeedbackCopyright © 2017, Texas Instruments Incorporated
8 Detailed Description
8.1 Overview
The TVS1400 is a precision clamp with a low, flat clamping voltage during transient overvoltage events like surge and protecting the system with zero voltage overshoot.
8.2 Functional Block Diagram
8.3 Feature Description
The TVS1400 is a precision clamp that handles 45 A of IEC 61000-4-5 8/20 µs surge pulse. The flat clamping feature helps keep the clamping voltage very low to keep the downstream circuits from being stressed. The flat clamping feature can also help end-equipment designers save cost by opening up the possibility to use lower- cost lower voltage tolerant downstream ICs. The TVS1400 has minimal leakage under the standoff voltage of 14 V, making it an ideal candidate for applications where low leakage and power dissipation is a necessity. IEC 61000-4-2 and IEC 61000-4-4 ratings make it a robust protection solution for ESD and EFT events. Wide ambient temperature range of –40°C to +125°C makes it a good candidate for most applications. Compact packages enable it to be used in small devices and save board area.
8.4 Device Functional Modes
8.4.1 Protection Specifications
The TVS1400 is specified according to both the IEC 61000-4-5 and IEC 61643-321 standards. This enables usage in systems regardless of which standard is required in relevant product standards or best matches measured fault conditions. The IEC 61000-4-5 standards requires protection against a pulse with a rise time of 8 µs and a half length of 20 µs while the IEC 61643-321 standard requires protection against a much longer pulse with a rise time of 10 µs and a half length of 1000 µs. The positive and negative surges are imposed to the TVS1400 by a combinational waveform generator (CWG) with a 2-Ω coupling resistor at different peak voltage levels. For powered on transient tests that need power supply bias, inductances are usually used to decouple the transient stress and protect the power supply. The TVS0500 is post tested by guaranteeing that there is no shift in device breakdown or leakage at Vrwm. The TVS1400 also integrates IEC 61000-4-2 Level 4 ESD Protection and 80 A of IEC 61000-4-4 EFT Protection. These combine to ensure that the device is able to protect against all transient conditions regardless of length or type. For more information on TI's test methods for Surge, ESD, and EFT testing, reference TI's IEC 61000-4-x Testing Application Note
ADVANCE□INFORMATION TVS1400 SLVSED3 –DECEMBER 2017 www.ti.com Product Folder Links: TVS1400 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Device Functional Modes (continued)
8.4.2 Minimal Derating
Unlike traditional diodes The TVS1400 has very little derating of max power dissipation and ensures robust performance up to 125°C. Traditional TVS diodes lose up to 50% of their current carrying capability when at high temperatures, so a surge pulse above 85°C ambient can cause failures that are not seen at room temperature. The TVS1400 prevents this and ensures that you will see the same level of protection regardless of temperature.
8.4.3 Transient Performance
During large transient swings, the TVS1400 will begin clamping the input signal to protect downstream conditions. While this prevents damage during fault conditions, it can cause leakage when the intended input signal has a fast slew rate. In order to keep power dissipation low and remove the chance of signal distortion, it is recommended to keep the slew rate of any input signal on the TVS1400 below 2.5 V/µs at room temperature and below 0.7 V/µs at 125°C. Faster slew rates will cause the device to clamp the input signal and draw current through the device for a few microseconds, increasing the rise time of the signal. This will not cause any harm to the system or to the device, however if the fast input voltage swings occur regularly it can cause device overheating.
9 Application and Implementation
validate and test their design implementation to confirm system functionality.
9.1 Application Information
by the environment or other electrical components.
9.2 Typical Application
Figure 1. TVS1400 Application Schematic
9.2.1 Design Requirements
technology provides the best protection solution.
9.2.2 Detailed Design Procedure
maximum. This ensures robust protection of your circuit.
ADVANCE□INFORMATION TVS1400 SLVSED3 –DECEMBER 2017 www.ti.com Product Folder Links: TVS1400 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Typical Application (continued) In addition, the low leakage and capacitance of the TVS1400 guarantees low input distortion. At 14 V, giving margin on the ±12.288 V range of the ADS8689, the device will see typical 10 nA leakage, which will have minimal effect on the overall system. The TVS1400 low capacitance of 125 pF will also cause less effect on signal integrity compared to industry standard devices like the SMBJ14A which has 1500 pF of capacitance and can cause up to 3 dB of THD attenuation in measured systems. Finally, the small size of the device also improves fault protection by lowering the effect of fault current coupling onto neighboring traces. The small form factor of the TVS1400 allows the device to be placed extremely close to the input connector, lowering the length of the path fault current will take through the system compared to larger protection solutions.
9.2.3 Application Curves
9.2.4 Configuration Options
The TVS1400 can be used in either unidirectional or bidirectional configuration. The TVS1400 shows unidirectional usage to protect an input. By placing two TVS1400's in series with reverse orientation, bidirectional operation can be utilized which will allow a working voltage of ±14 V. TVS1400 operation in bidirectional will be similar to unidirectional operation, with a minor increase in breakdown voltage and clamping voltage.
10 Power Supply Recommendations
The TVS1400 is a clamping device so there is no need to power it. Be careful not to violate the recommended VIN voltage range (0 V to 14 V) to ensure the device functions properly.
11 Layout
11.1 Layout Guidelines
which are between the TVS and the connector. Route the protected traces as straight as possible. corners with the largest radii possible. Electric fields tend to build up on corners, increasing EMI coupling.
11.2 Layout Example
Figure 2. TVS1400 Layout
ADVANCE□INFORMATION TVS1400 SLVSED3 –DECEMBER 2017 www.ti.com Product Folder Links: TVS1400 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
12 Device and Documentation Support
12.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
www.ti.com 21-Dec-2017 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples PTVS1400DRVR ACTIVE WSON DRV 6 3000 TBD Call TI Call TI -40 to 125 TVS1400DRVR PREVIEW WSON DRV 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 1HSH (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Images above are just a representation of the package family, actual package may vary. Refer to the product data sheet for package details. DRV 6 WSON - 0.8 mm max height PLASTIC SMALL OUTLINE - NO LEAD 4206925/F
www.ti.com PACKAGE OUTLINE C 6X 0.35 0.25 1.6±0.1 6X 0.3 0.2 1.3 1±0.1 4X 0.65
0.8 MAX
0.05 0.00 B 2.1 1.9 A 2.1 1.9 (0.2) TYP WSON - 0.8 mm max heightDRV0006A PLASTIC SMALL OUTLINE - NO LEAD 4222173/A 12/2015 PIN 1 INDEX AREA SEATING PLANE 0.08 C 3 4 (OPTIONAL) PIN 1 ID
0.1 C A B
0.05 C THERMAL PAD EXPOSED NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance. SCALE 5.500
www.ti.com EXAMPLE BOARD LAYOUT
0.07 MIN
0.07 MAX
(1) 4X (0.65) (1.95) 6X (0.3) 6X (0.45) (1.6) (R ) TYP0.05 ( ) VIA TYP 0.2 (1.1) WSON - 0.8 mm max heightDRV0006A PLASTIC SMALL OUTLINE - NO LEAD 4222173/A 12/2015 SYMM 3 4 SYMM LAND PATTERN EXAMPLE SCALE:25X NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271). 5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown. SOLDER MASK OPENING SOLDER MASK METAL UNDER SOLDER MASK DEFINED METALSOLDER MASK OPENING SOLDER MASK DETAILS NON SOLDER MASK DEFINED (PREFERRED)
www.ti.com EXAMPLE STENCIL DESIGN 6X (0.3) 6X (0.45) 4X (0.65) (0.7) (1) (1.95) (R ) TYP0.05 (0.45) WSON - 0.8 mm max heightDRV0006A PLASTIC SMALL OUTLINE - NO LEAD 4222173/A 12/2015 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. SOLDER PASTE EXAMPLE BASED ON 0.125 mm THICK STENCIL EXPOSED PAD #7 88% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE SCALE:30X SYMM 3 4 SYMM METAL
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