PTMA210404FL_09 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Features

  • Designed for wide RF and modulation bandwidths and low memory effects
  • Typical channel isolation = 26 dB
  • Typical single channel performance CW, 2018 MHz, 28 V - Output power at P-1dB = 20 W - Linear Gain = 30.5 dB - Efficiency = 54%
  • Typical Doherty performance with six-carrier TD-SCDMA signal, VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VG2A = 1.06 V, ƒ = 2018 MHz - Average output power = 10 W - Linear Gain = 27 dB - Efficiency = 35% - ACLR1 = –33 dBc - ACLR2 = –34 dBc
  • Capable of handling 10:1 VSWR @ 28 V, 50 W (CW) output power
  • Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
  • High-performance, thermally-enhanced package, Pb-free and RoHS compliant, with low-gold plating *See Infineon distributor for future availability. RF Characteristics Six-carrier TD-SCDMA Measurements in Doherty Circuit (tested in Infineon test fixture) VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VGS2A = 1.05 V, POUT = 10 W average, ƒ = 2018 MHz, input PAR = 9.8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 26 27 — dB Drain Efficiency η D 33 35 — % Adjacent Channel Power Ratio ACPR — –33 –30 dBc Alternate Channel Power Ratio Alt — –34 –31 dBc

Data Sheet 2 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution RF Characteristics (cont.) CW Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VGS2A = 1.05 V, ƒ = 2018 MHz Characteristic Conditions Symbol Min Typ Max Unit Gain Flatness 1 W / 15 MHz Δ G — 0.30 — dB Gain Compression 40 W — — –0.4 –1.0 dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA Final Stage On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on)1 — 3.6 — Ω RDS(on)2 — 0.6 — Ω Operating Gate Voltage VDS = 28 V, IDQ1 = 50 mA, VGS 2.0 2.4 3.0 V IDQ2 = 120 mA Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Input Power for CW - each side PIN < 20 dBm Total Device Dissipation Stage 1 PD 29 W Above 25°C derate by 0.167 W/°C Stage 2 PD 110 W Above 25°C derate by 0.625 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) Stage 1 Rθ JC 6.0 °C/W Stage 2 Rθ JC 1.6 °C/W *See Infineon distributor for future availability.

Data Sheet 3 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution

Ordering Information

Type and Version Package Outline Flange Type Shipping Marking PTMA210404FL V1 H-34248-12 Earless flange Tray PTMA210404FL PTMA210404FL V1 R250 H-34248-12 Earless flange Tape & Reel 250 pcs PTMA210404FL Typical Performance (data taken in a production test fixture) CW Performance of Each Side VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA 30 32 34 36 38 40 42 44 Output Power (dBm) Gain (dB) Gain Efficiency 2010 MHz

2018 MHz

2025 MHz

Power Added Efficiency (%) Six-carrier TD-SCDMA Drive-up Single Side: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA, ƒ = 2017.5 MHz -45 -40 -35 -30 -25 -20 33 34 35 36 37 38 Output Power (dBm) ACPR (dBc) Efficiency (%) Adj Lower Adj Upper Alt Lower Alt Upper Efficiency

Data Sheet 4 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Two-carrier WCDMA Performance VDD1 = VDD2 = 28 V, IDQ1 = 60 mA, IDQ2 = 260 mA

10 MHz Spacing, 8 dB PAR, ƒ = 2140 MHz

-50 -45 -40 -35 -30 -25 -20 -15 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Average Output Power (dBm) 3rd Order IMD Drain Efficiency (%) Efficiency ACPR IM3UIM3L CW Sweep at P -1dB VDD1 = VDD2 = 28V, IDQ1 = 50 mA, IDQ2 = 120 mA 30 31 32 33 34 35 36 37 38 39 40 41 42 43 Output Power (dBm) Gain (dB) Drain Efficiency (%) 2110 MHz

2140 MHz

2170 MHz

Typical Performance (cont.) Two-tone Performance at Various I DQ1 Single Side, ƒ = 2018 MHz VDD = 28 V, IDQ1 = Varying, IDQ2 = 120 mA -44 -42 -40 -38 -36 -34 -32 -30 30 31 32 33 34 35 36 37 38 39 40 Average Output Power (dBm) 3rd Order Intermodulation Distortion (dBc) 50mA 55mA 60mA 65mA 70mA Two-tone Performance at Various I DQ2 Single Side, ƒ = 2018 MHz VDD = 28 V, IDQ1 = 60 mA, IDQ2 = Varying -60 -55 -50 -45 -40 -35 -30 30 31 32 33 34 35 36 37 38 39 40 Average Output Power (dBm) 3rd Order Intermodulation Distortion (dBc) 100mA 110mA 120mA 130mA 140mA

Data Sheet 5 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance Doherty Circuit, Carrier: VDD = 28 V, IDQ1 = 55 mA, IDQ2 = 120 mA Peaking: VDD = 28 V, IDQ1 = 55 mA, VGS2 = 1.07 V 32 34 36 38 40 42 44 46 48 Output Power (dBm) Gain (dB) Gain Efficiency

2010 MHz

Power Added Efficiency (%) Broadband Performance Doherty Circuit Carrier: VDD = 28 V, IDQ1 = 55 mA, IDQ2 = 120 mA Peak: VDD = 28 V, IDQ1 = 55 mA, VGS2 = 1.07 V 1800 1900 2000 2100 2200 Frequency (MHz) Gain (dB) -35 -30 -25 -20 -15 -10 Gain Return Loss Input Return Loss (dB) Power Gain vs Frequency Doherty Circuit, CW, 40W Carrier: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA Peaking: VDD = 28V, IDQ1 = 60 mA, VGS2 = 1.07 V 1800 1850 1900 1950 2000 2050 2100 Frequency (MHz) Gain (dB) Gain Efficiency Power Added Efficiency (%) CW at Various Drain Voltage Doherty Circuit, ƒ = 2018 MHz 32 34 36 38 40 42 44 46 48 Output Power (dBm) Gain (dB) Gain Efficiency 24 V 28 V 32 V Power Added Efficiency (%)

Data Sheet 6 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Broadband Circuit Impedance Z Source Z Load G S D Frequency Z Source W Z Load W MHz R jX R jX 2000 74.7 25.2 4.2 -2.2 2010 75.6 24.9 4.2 -2.1 2020 76.5 24.5 4.2 -2.0 2030 77.4 24.1 4.2 -1.9 2040 78.3 23.7 4.1 -1.9 Typical Performance (cont.) Gate – Source Voltage vs. Temperature VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA 2.10 2.20 2.30 2.40 2.50 2.60 2.70 -30 -10 10 30 50 70 90 Temperature (°C) Gate – Source Voltage (V) Slope = –1.435 mV/°C Slope = –1.168 mV/°C IDQ2 IDQ1 CW at Various Temperatures Doherty Circuit, Carrier: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA Peaking: VDD = 28 V, IDQ1 = 60 mA, VGS2 = 1.07 V 32 34 36 38 40 42 44 46 48 Output Power (dBm) Gain (dB) Gain Efficiency -25oC 25oC 90oC Power Added Efficiency (%) 0.1 0.3 0.5 0.2 0.4 0.1 0.1 - W AVELENGTHS TOW AR ENGTHS TOW ARD LOAD - 0.0 Z Load Z Source

2000 MHz

2040 MHz

Z0 = 50 Ω

Data Sheet 7 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Reference Circuit a 2 1 0 4 0 4 e f l _ b d _ 6 - 1 2 - 0 9 l18 l12 R 1 50K V l14 l15 l16 l17 l10 l19 l 20 l 11 J2 Q 3 VG1 G2V Q 1 G1V Q 2 G2V l13 VDD2 VDD2 VDD 1 VDD 1 12pF .1µF 1µF 10µF 10µF 10µF 1µF .1µF 12pF C13 12pF C12 .1µF C11 1µF C10 10µF C14 0.9pF C28 0.9pF C27 12pF C26 .1µF C25 1µF C24 10µF C20 10µF C21 1µF C22 .1µF C23 12pF C19 12pF C18 .1µF C17 1µF C16 10µF C15 10µF C29 12pF C30 .1µF C31 1µF C32 10µF C33 100µF C39 2.4pF C40 0.9pF C41 12pF C46 0.7pF C45 12pF C43 1.1pF C42 2.4pF C34 12pF C35 .1µF C36 1µF C37 10µF C38 100µF C44 0.7pF Reference circuit block diagram for ƒ = 2017.5 MHz

Data Sheet 8 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Circuit Assembly Information DUT PTMA210404FL LDMOS IC PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers RO4350 1 oz. copper Microstrip Electrical Characteristics at 2017.5 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) Reference Circuit (cont.)

Data Sheet 9 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Reference circuit assembly diagram (not to scale)* Reference Circuit (cont.) Component Description Suggested Manufacturer P/N or Comment C1, C15 Tantalum Capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND C2, C6, C10, C15, C20, Ceramic Capacitor, 10 µF Digi-Key 490-1891-2-ND C24, C32, C37 C3, C7, C11, C17, C21, Ceramic Capacitor, 1 µF Digi-Key 445-1411-2-ND C25, C31, C36 C4, C8, C12, C18, C22, Capacitor, 0.1 µF Digi-Key 399-1267-2-ND C26, C30, C35 C5, C9, C13, C19, C23, Ceramic Capacitor, 12 pF ATC 600S120JT C27, C29, C34, C41, C45 C14, C28, C40 Ceramic Capacitor, 0.9 pF ATC 600S0R9BT C33, C38 Electrolitic Capacitor, 100 µF, 35 V Digi-Key PCE3373TR-ND C39, C42 Ceramic Capacitor, 2.4 pF ATC 600S2R4BT C43 Ceramic Capacitor, 1.1 pF ATC 600S1R1BT C44, C46 Ceramic Capacitor, 0.7 pF ATC 600S0R7BT Q1, Q2, Q3 Transistor Infineon Technologies BCP56 R1 Chip Resistor, 50 ohms Digi-Key RFP100200-4Y502 R2, R3, R4, R5 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND *Gerber Files for this circuit available on request RF_IN RF_OUT a 210404 efl _ CD - assy 6 - 10 - 09 C10 C26 C24 C25C28 C22C17 C20 C21 C19 C16 C11 C13 C12 C18 C23 C27 C34 C36 C35 C37 C43C42 C44 C45C41 C38 C14 C5 C40C39 C29 C30 C32 C31 C33 C46 2A1306-3 ANAREN 0324 XInger VG1 VG2 VG1 VG2 VG2 VDD VDD VDD VDD R2 Q1Q2R3 C15

Data Sheet 10 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Application Examples Out Single - ended Doherty Quadrature Combined Push-pull Out Out Out Out In In In In In 90º

Data Sheet 11 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Package Specifications Package H-34248-12 Outline LC CL 9.771 [.385] FLANGE 2X 5.710 [.225] 20.583 [.810] 2X 7.157 [.282] 2X 5.888 [.232] 2X 4.213 [.166] 2X 2.538 [.100] 2X 1.269 [.050] R0.51+.381 -.127 [R.020+.015 -.005 ]FLANGE 9.398 [.370] LID 2X 0.762 [.030] 8X 0.406 [.016] 19.812±0.200 [.780±.008] 1.016 [.040] 3.632±0.380 [.143±.015] SPH 1.575 [.062] 0.038 [.0015] -A- SOURCE 14.720 [.580] REF CL 15.227±0.510 [.600±.020] 2.728±0.510 [.107±.020] 8.223 [.324] 4.112 [.162] 1 2 108 9 11 1253 4 6 7 C66065-A0003-C728-01-0027 H-34248-12-1.dwg 6-12-09 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 7. All tolerances ± 0.127 [.005] unless specified otherwise. 5. Gold plating thickness: 0.254 micron [10 microinch] max.

Data Sheet 12 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution VD1A NC RFINA VG1A VG2A VD1B NC RFINB VG1B VG2B VD2A VD2B a 210404 fl _h - 34248 - 12 _PD _05 - 22 - 09 Package Specifications (cont.) Package H-34248-12 Pinout Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Source: Package Flange Top View

Data Sheet 13 of 13 Rev. 04, 2009-06-16 PTMA210404FL V1 Confidential, Limited Internal Distribution Revision History: 2009-06-16 Data Sheet Previous Version: 2009-06-05, Preliminary Data Sheet Page Subjects (major changes since last revision) all Remove Preliminary designation 7, 8, 9 Add reference circuit information

11 Finalize package information

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com/rfpower ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International