R5F523W8DDLN RENESAS | Alldatasheet

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Features

■ 32-bit RXv2 CPU core  Max. operating frequency: 54 MHz Capable of 88.56 DMIPS in operation at 54 MHz  Enhanced DSP: 32-bit multiply-accumulate and 16-bit multiply-subtract instructions supported  Built-in FPU: 32-bit single-precision floating point (compliant to IEEE754)  Divider (fastest instruction execution takes two CPU clock cycles)  Fast interrupt  CISC Harvard architecture with 5-stage pipeline  Variable-length instructions, ultra-compact code  On-chip debugging circuit  Memory protection unit (MPU) supported ■ Low power design and architecture  Operation from a single 1.8-V to 3.6-V supply  RTC capable of operating on the battery backup power supply  Three low power consumption modes  Low power timer (LPT) that operates during the software standby state ■ On-chip flash memory for code  384- to 512-Kbyte capacities  On-board or off-board user programming  Programmable at 1.8 V  For instructions and operands ■ On-chip data flash memory  8 Kbytes (1,000,000 program/erase cycles (typ.))  BGO (Background Operation) ■ On-chip SRAM, no wait states  64-Kbyte size capacities ■ Data transfer functions  DMAC: Incorporates four channels  DTC: Four transfer modes ■ ELC  Module operation can be initiated by event signals without using interrupts.  Linked operation between modules is possible while the CPU is sleeping. ■ Reset and supply management  Eight types of reset, including the power-on reset (POR)  Low voltage detection (LVD) with voltage settings ■ Clock functions  Main clock oscillator frequency: 1 to 20 MHz  External clock input frequency: Up to 20 MHz  Sub-clock oscillator frequency: 32.768 kHz  Frequency of Bluetooth-dedicated clock oscillator: 32 MHz  PLL circuit input: 4 MHz to 12.5 MHz  On-chip low- and high-speed oscillators, dedicated on-chip low-speed oscillator for the IWDT  USB-dedicated PLL circuit: 4, 6, 8, or 12 MHz

54 MHz can be set for the system clock and 48 MHz for the USB clock

 Generation of a dedicated 32.768-kHz clock for the RTC  Clock frequency accuracy measurement circuit (CAC) ■ Realtime clock  Adjustment functions (30 seconds, leap year, and error)  Calendar count mode or binary count mode selectable  Time capture function  Time capture on event-signal input through external pins ■ Independent watchdog timer  15-kHz on-chip oscillator produces a dedicated clock signal to drive IWDT operation. ■ Useful functions for IEC60730 compliance  Self-diagnostic and disconnection-detection assistance functions for the A/D converter, clock frequency accuracy measurement circuit, independent watchdog timer, RAM test assistance functions using the DOC, etc. ■ Capacitive touch sensing unit  Self-capacitance method: A single pin configures a single key, supporting up to 12 keys  Mutual capacitance method: Matrix configuration with 12 pins, supporting up to 36 keys ■ Up to 12 communication functions  Bluetooth Low Energy (1 channel) An RF transceiver and link layer compliant with the Bluetooth 5.0 Low Energy specification LE 1M PHY, LE 2M PHY, LE Coded PHY (125 kbps and 500 kbps), and LE Advertising extension support On-chip Bluetooth-dedicated AES-CCM (128-bit blocks) encryption circuit The 83-pin LGA product has been certified as compliant with radio- related laws (in Japan, North America, and Europe). The 83-pin LGA product includes a small PCB trace antenna.  USB 2.0 host/function/On-The-Go (OTG) (one channel), full-speed = 12 Mbps, low-speed = 1.5 Mbps, isochronous transfer, and BC (Battery Charger) supported  CAN (one channel) compliant to ISO11898-1: Transfer at up to 1 Mbps  SCI with many useful functions (up to 4 channels) Asynchronous mode, clock synchronous mode, smart card interface Reduction of errors in communications using the bit modulation function  IrDA interface (one channel, in cooperation with the SCI5)  I 2C bus interface: Transfer at up to 400 kbps, capable of SMBus operation (one channel)  RSPI (one channel): Transfer at up to 16 Mbps  Serial sound interface (one channel)  SD host interface (optional: one channel) SD memory/ SDIO 1-bit or 4-bit SD bus supported ■ Up to 19 extended-function timers  16-bit MTU: input capture, output compare, complementary PWM output, phase counting mode (five channels)  16-bit TPU: input capture, output compare, phase counting mode (six channels)  8-bit TMR (four channels)  16-bit compare-match timers (four channels) ■ 12-bit A/D converter  Capable of conversion within 0.83 μs  14 channels  Sampling time can be set for each channel  Self-diagnostic function and analog input disconnection detection assistance function ■ 12-bit D/A converter  Two channels ■ Analog comparator  Two channels × one unit ■ General I/O ports  5-V tolerant, open drain, input pull-up, switching of driving capacity ■ Encryption functions (TSIP-Lite)  Unauthorized access to the encryption engine is disabled and imposture and falsification of information are prevented  Safe management of keys  128- or 256-bit key length of AES for ECB, CBC, GCM, others  True random number generator ■ Temperature sensor ■ Operating temperature range  40 to +85C ■ Applications  85-pin BGA, 56-pin QFN: General industrial and consumer equipment  83-pin LGA: Consumer equipment PTLG0083KA-A 6.1 × 9.5 mm, 0.5 mm pitch PTBG0085KB-A 5.5 × 5.5 mm, 0.5 mm pitch PVQN0056LA-A 7 × 7 mm, 0.4 mm pitch 54-MHz 32-bit RX MCUs, built-in FPU, 88.56 DMIPS, up to 512-KB flash memory, Bluetooth 5.0, various communication functions including USB 2.0 full-speed host/function/OTG, CAN, SD host interface, serial sound interface, capacitive touch sensing unit, 12-bit A/D converter, 12-bit D/A converter, RTC, Encryption functions R01DS0342EJ0110 Rev.1.10 Mar 30, 2021

R01DS0342EJ0110 Rev.1.10 Page 2 of 109 Mar 30, 2021 RX23W Group 1. Overview 1. Overview

1.1 Outline of Specifications

Table 1.1 lists the specifications, and Table 1.2 gives a comparison of the functions of the products in different packages. Table 1.1 is for products with the greatest number of functions, so the number of peripheral modules and channels will differ in accordance with the package type. For details, see Table 1.2, Comparison of Functions for Different Packages. Table 1.1 Outline of Specifications (1/5) Classification Module/Function Description CPU CPU  Maximum operating frequency: 54 MHz  32-bit RX CPU (RX v2)  Minimum instruction execution time: One instruction per clock cycle  Address space: 4-Gbyte linear  Register set General purpose: Sixteen 32-bit registers Control: Ten 32-bit registers Accumulator: Two 72-bit registers  Basic instructions: 75 (variable-length instruction format)  Floating-point instructions: 11  DSP instructions: 23  Addressing modes: 10  Data arrangement Instructions: Little endian Data: Selectable as little endian or big endian  On-chip 32-bit multiplier: 32-bit × 32-bit → 64-bit  On-chip divider: 32-bit ÷ 32-bit → 32 bits  Barrel shifter: 32 bits  Memory protection unit (MPU) FPU  Single precision (32-bit) floating point  Data types and floating-point exceptions in conformance with the IEEE754 standard Memory ROM  Capacity: 384/512 Kbytes  Up to 32 MHz: No-wait memory access 32 to 54 MHz: Wait state required. No wait state if the instruction is served by a ROM accelerator hit.  Programming/erasing method: Serial programming (asynchronous serial communication/USB communication), self-programming RAM  Capacity: 64 Kbytes  54 MHz, no-wait memory access E2 DataFlash  Capacity: 8 Kbytes  Number of erase/write cycles: 1,000,000 (typ) MCU operating mode Single-chip mode Clock Clock generation circuit  Main clock oscillator, sub-clock oscillator, low-speed on-chip oscillator, high-speed on-chip oscillator, PLL frequency synthesizer, USB-dedicated PLL frequency synthesizer, and IWDT-dedicated on-chip oscillator, Bluetooth-dedicated clock oscillator, Bluetooth-dedicated low-speed on-chip oscillator  Oscillation stop detection: Available  Clock frequency accuracy measurement circuit (CAC)  Independent settings for the system clock (ICLK), peripheral module clock (PCLK), and FlashIF clock (FCLK) The CPU and system sections such as other bus masters run in synchronization with the system clock (ICLK): 54 MHz (at max.) MTU2a runs in synchronization with the PCLKA: 54 MHz (at max.) The ADCLK for the S12AD runs in synchronization with the PCLKD: 54 MHz (at max.) Peripheral modules other than MTU2a and S12ADE run in synchronization with the PCLKB: 32 MHz (at max.) The flash peripheral circuit runs in synchronization with the FCLK: 32 MHz (at max.) Resets RES# pin reset, power-on reset, voltage monitoring reset, watchdog timer reset, independent watchdog timer reset, and software reset Voltage detection Voltage detection circuit (LVDAb)  When the voltage on VCC falls below the voltage detection level, an internal reset or internal interrupt is generated. Voltage detection circuit 0 is capable of selecting the detection voltage from 3 levels Voltage detection circuit 1 is capable of selecting the detection voltage from 10 levels

R01DS0342EJ0110 Rev.1.10 Page 3 of 109 Mar 30, 2021 RX23W Group 1. Overview Low power consumption Low power consumption functions  Module stop function  Three low power consumption modes Sleep mode, deep sleep mode, and software standby mode  Low power timer that operates during the software standby state Function for lower operating power consumption  Operating power control modes High-speed operating mode, middle-speed operating mode, and low-speed operating mode Interrupt Interrupt controller (ICUb)  Interrupt vectors: 148  External interrupts: 7 (NMI, IRQ0, IRQ1, IRQ4 to IRQ7 pins)  Non-maskable interrupts: 6 (NMI pin, oscillation stop detection interrupt, voltage monitoring 1 interrupt, WDT interrupt, IWDT interrupt, and VBATT power monitoring interrupt)  16 levels specifiable for the order of priority DMA DMA controller (DMACA)  4 channels  Three transfer modes: Normal transfer, repeat transfer, and block transfer  Activation sources: Software trigger, external interrupts, and interrupt requests from peripheral functions Data transfer controller (DTCa)  Transfer modes: Normal transfer, repeat transfer, and block transfer  Activation sources: Interrupts  Chain transfer function I/O ports General I/O ports 85-pin/83-pin/56-pin I/O: 43/43/29  Input: 1/1/1 Pull-up resistors: 43/43/29  Open-drain outputs: 31/31/24  5-V tolerance: 5/5/4 Event link controller (ELC)  Event signals of 59 types can be directly connected to the module  Operations of timer modules are selectable at event input  Capable of event link operation for port B and port E Multi-function pin controller (MPC) Capable of selecting the input/output function from multiple pins Timers 16-bit timer pulse unit (TPUa)  (16 bits × 6 channels) × 1 unit  Maximum of 10 pulse-input/output possible  Select from among seven or eight counter-input clock signals for each channel  Supports the input capture/output compare function  Output of PWM waveforms in up to 9 phases in PWM mode  Support for buffered operation, phase-counting mode (two-phase encoder input) and cascade connected operation (32 bits × 2 channels) depending on the channel.  Capable of generating conversion start triggers for the A/D converters  Signals from the input capture pins are input via a digital filter  Clock frequency measuring method Multi-function timer pulse unit 2 (MTU2a)  (16 bits × 5 channels) × 1 unit  Up to 15 pulse-input/output lines are available based on the six 16-bit timer channels  Select from among eight or seven counter-input clock signals for each channel (PCLK/1, PCLK/4, PCLK/16, PCLK/64, PCLK/256, PCLK/1024, MTCLKA, MTCLKB, MTCLKC, MTCLKD).  Input capture function  18 output compare/input capture registers  Pulse output mode  Complementary PWM output mode  Reset synchronous PWM mode  Phase-counting mode  Capable of generating conversion start triggers for the A/D converter Port output enable 2 (POE2a) Controls the high-impedance state of the MTU’s waveform output pins Compare match timer (CMT)  (16 bits × 2 channels) × 2 units  Select from among four clock signals (PCLK/8, PCLK/32, PCLK/128, PCLK/512) Watchdog timer (WDTA)  14 bits × 1 channel  Select from among six counter-input clock signals (PCLK/4, PCLK/64, PCLK/128, PCLK/512, PCLK/ 2048, PCLK/8192) Table 1.1 Outline of Specifications (2/5) Classification Module/Function Description

R01DS0342EJ0110 Rev.1.10 Page 4 of 109 Mar 30, 2021 RX23W Group 1. Overview Timers Independent watchdog timer (IWDTa)  14 bits × 1 channel  Count clock: Dedicated low-speed on-chip oscillator for the IWDT Frequency divided by 1, 16, 32, 64, 128, or 256 Realtime clock (RTCe)  Clock source: Sub-clock  Time/calendar  Interrupts: Alarm interrupt, periodic interrupt, and carry interrupt  Time-capture facility for two values Low power timer (LPT)  16 bits × 1 channel  Clock source: Sub-clock, Dedicated low-speed on-chip oscillator for the IWDT Frequency divided by 2, 4, 8, 16, or 32 8-bit timer (TMR)  (8 bits × 2 channels) × 2 units  Seven internal clocks (PCLK/1, PCLK/2, PCLK/8, PCLK/32, PCLK/64, PCLK/1024, and PCLK/8192) and an external clock can be selected  Pulse output and PWM output with any duty cycle are available  Two channels can be cascaded and used as a 16-bit timer Communication functions Serial communications interfaces (SCIg, SCIh)  4 channels (channel 1, 5, 8: SCIg, channel 12: SCIh)  SCIg Serial communications modes: Asynchronous, clock synchronous, and smart-card interface Multi-processor function On-chip baud rate generator allows selection of the desired bit rate Choice of LSB-first or MSB-first transfer Average transfer rate clock can be input from TMR timers for SCI5, and SCI12 Start-bit detection: Level or edge detection is selectable. Simple I Simple SPI 9-bit transfer mode Bit rate modulation Event linking by the ELC (only on channel 5)  SCIh (The following functions are added to SCIg) Supports the serial communications protocol, which contains the start frame and information frame Supports the LIN format IrDA interface (IRDA)  1 channel (SCI5 used)  Supports encoding/decoding of waveforms conforming to IrDA standard 1.0 I 2C bus interface (RIICa)  1 channel  Communications formats: I2C bus format/SMBus format  Master mode or slave mode selectable  Supports fast mode Serial peripheral interface (RSPIa)  1 channel  Transfer facility Using the MOSI (master out, slave in), MISO (master in, slave out), SSL (slave select), and RSPCK (RSPI clock) enables serial transfer through SPI operation (four lines) or clock-synchronous operation (three lines)  Capable of handling serial transfer as a master or slave  Data formats  Choice of LSB-first or MSB-first transfer The number of bits in each transfer can be changed to 8, 9, 10, 11, 12, 13, 14, 15, 16, 20, 24, or 32 bits. 128-bit buffers for transmission and reception Up to four frames can be transmitted or received in a single transfer operation (with each frame having up to 32 bits)  Double buffers for both transmission and reception USB 2.0 host/function module (USBc)  USB Device Controller (UDC) and transceiver for USB 2.0 are incorporated.  Host/function module: 1 port  Compliant with USB version 2.0  Transfer speed: Full-speed (12 Mbps), low-speed (1.5 Mbps)  OTG (ON-The-Go) is supported.  Isochronous transfer is supported.  BC1.2 (Battery Charging Specification Revision 1.2) is supported. CAN module (RSCAN)  1 channel  Compliance with the ISO11898-1 specification (standard frame and extended frame)  16 Message boxes Table 1.1 Outline of Specifications (3/5) Classification Module/Function Description

R01DS0342EJ0110 Rev.1.10 Page 5 of 109 Mar 30, 2021 RX23W Group 1. Overview Communication functions Serial Sound Interface (SSI)  1 channel  Capable of duplex communications  Various serial audio formats supported  Master/slave function supported  Programmable word clock or bit clock generation function  8/16/18/20/22/24/32-bit data formats supported  On-chip 8-stage FIFO for transmission/reception  Supports WS continue mode in which the SSIWS signal is not stopped. SD Host Interface (SDHIa)  1 channel  Transfer speed: Default speed mode (8MB/s)  SD memory card interface (1 bit / 4bits SD bus)  MMC, eMMC Backward-compatible are supported.  SD Specifications Part 1: Compliant with Physical Layer Specification Ver.3.01 (Not support DDR) Part E1: SDIO Specification Ver. 3.00  Error check function: CRC7 (command), CRC16 (data)  Interrupt Source: Card access interrupt, SDIO access interrupt, Card detection interrupt, SD buffer access interrupt  DMA transfer sources: SD_BUF write, SD_BUF read  Card detection, Write protection Bluetooth low energy (BLE)  On-chip RF transceiver and link layer compliant with the Bluetooth 5.0 Low Energy specification  Bit rates: 1 Mbps, 2 Mbps, 500 kbps, and 125 kbps  LE Advertising extension support  Includes an RF transceiver power supply (selectable as a DC-to-DC converter or linear regulator)  On-chip matching circuit to help reduce the number of external parts  Transmission power: +4 dBm support  Small PCB trace antenna  Certified as compliant with radio-related laws  Bluetooth-dedicated clock oscillator Encryption functions  Access management circuit  Encryption engine 128- or 256-bit key sizes of AES Block cipher mode of operation: GCM, ECB, CBC, CMAC, XTS, CTR, GCTR  Hash function  True random number generator  Prevention from illicit copying of a key 12-bit A/D converter (S12ADE)  12 bits (14 channels × 1 unit)  12-bit resolution  Minimum conversion time: 0.83 µs per channel when the ADCLK is operating at 54 MHz  Operating modes Scan mode (single scan mode, continuous scan mode, and group scan mode) Group A priority control (only for group scan mode)  Sampling variable Sampling time can be set up for each channel.  Self-diagnostic function  Double trigger mode (A/D conversion data duplicated)  Detection of analog input disconnection  A/D conversion start conditions A software trigger, a trigger from a timer (MTU, TPU), an external trigger signal, or ELC  Event linking by the ELC Temperature sensor (TEMPSA)  1 channel  The voltage output from the temperature sensor is converted into a digital value by the 12-bit A/D converter. 12-bit D/A converter (R12DAA)  2 channels  12-bit resolution  Output voltage: 0.4 to AVCC0-0.5V CRC calculator (CRC)  CRC code generation for arbitrary amounts of data in 8-bit units  Select any of three generating polynomials: X 8 + X2 + X + 1, X16 + X15 + X2 + 1, or X16 + X12 + X5 + 1  Generation of CRC codes for use with LSB-first or MSB-first communications is selectable. Comparator B (CMPBa)  2 channels × 1 unit  Function to compare the reference voltage and the analog input voltage  Window comparator operation or standard comparator operation is selectable Capacitive touch sensing unit (CTSU) Detection pin: 12 channels Data operation circuit (DOC) Comparison, addition, and subtraction of 16-bit data Operating temperature range D version: 40 to +85°C Table 1.1 Outline of Specifications (4/5) Classification Module/Function Description

R01DS0342EJ0110 Rev.1.10 Page 6 of 109 Mar 30, 2021 RX23W Group 1. Overview 83-pin LGA (PTLG0083KA-A) 6.1 × 9.5 mm, 0.5 mm pitch 56-pin QFN (PVQN0056LA-A) 7 × 7 mm, 0.4 mm pitch Debugging interfaces FINE interface Table 1.1 Outline of Specifications (5/5) Classification Module/Function Description

R01DS0342EJ0110 Rev.1.10 Page 7 of 109 Mar 30, 2021 RX23W Group 1. Overview Table 1.2 Comparison of Functions for Different Packages Module/Functions RX23W Group

56 Pins 83 Pins 85 Pins

External bus External bus Not supported Interrupts External interrupts NMI, IRQ0, IRQ1, IRQ4 to IRQ7 DMA DMA controller 4 channels (DMAC0 to DMAC3) Data transfer controller Available Timers 16-bit timer pulse unit 5 channels (TPU0 to TPU3, TPU5) 6 channels (TPU0 to TPU5) Multi-function timer pulse unit 2 5 channels (MTU0 to MTU4) Port output enable 2 POE0#, POE8# POE0#, POE1#, POE3#, POE8# 8-bit timer 2 channels × 2 units Compare match timer 2 channels × 2 units Low power timer 1 channel Realtime clock Available Watchdog timer Available Independent watchdog timer Available Communication functions Serial communications interfaces (SCIg) 3 channels (SCI1, 5, 8) IrDA interface 1 channel (SCI5) Serial communications interfaces (SCIh) Not supported 1 channel (SCI12) I 2C bus interface 1 channel CAN module 1 channel Serial peripheral interface 1 channel USB 2.0 host/function module 1 channel Serial sound interface 1 channel SD Host Interface Not supported 1 channel Bluetooth low energy An RF transceiver and link layer compliant with Bluetooth 5.0 low energy specification Capacitive touch sensing unit 9 channels 12 channels 12-bit A/D converter (including high-precision channels) 8 channels (4 channels) 14 channels (8 channels) Temperature sensor Available D/A converter 1 channel 2 channels CRC calculator Available Event link controller Available Comparator B 2 channels RF transceiver power supply DC-to-DC converter and linear regulator are selectable Linear regulator DC-to-DC converter and linear regulator are selectable Small PCB trace antenna Not supported Included Not supported Dedicated crystal for the bluetooth 32 MHz Not supported Included Not supported Certificates of compliance with radio-related laws (technical standards, FCC, ISED, and CE) — Confirmed — Packages 56-pin QFN 83-pin LGA 85-pin BGA

R01DS0342EJ0110 Rev.1.10 Page 8 of 109 Mar 30, 2021 RX23W Group 1. Overview

1.2 List of Products

Table 1.3 is a list of products, and Figure 1.1 shows how to read the product part no., memory capacity, and package type. Figure 1.1 How to Read the Product Part Number Table 1.3 List of Products: D Version (T a = –40 to +85°C) Group Part No. Order Part No. Package ROM Capacity RAM Capacity DataFlash Operating Frequency Security Function Antenna Operating Temperature RX23W R5F523W8ADBL R5F523W8ADBL#20 PTBG0085KB-A 512 Kbytes 64 Kbytes 8 Kbytes 54 MHz Not available Not included –40 to +85°C R5F523W8CDLN R5F523W8CDLN#U0 PTLG0083KA-A Not available Included R5F523W8ADNG R5F523W8ADNG#30 PVQN0056LA-A Not available Not included R5F523W8BDBL R5F523W8BDBL#20 PTBG0085KB-A Available Not included R5F523W8DDLN R5F523W8DDLN#U0 PTLG0083KA-A Available Included R5F523W8BDNG R5F523W8BDNG#30 PVQN0056LA-A Available Not included R5F523W7ADBL R5F523W7ADBL#20 PTBG0085KB-A 384 Kbytes Not available Not included R5F523W7ADNG R5F523W7ADNG#30 PVQN0056LA-A Not available Not included R5F523W7BDBL R5F523W7BDBL#20 PTBG0085KB-A Available Not included R5F523W7BDNG R5F523W7BDNG#30 PVQN0056LA-A Available Not included R5F 5 2 3 W8ADB L Package type, number of pins, and pin pitch BL: BGA/85/0.5 LN: LGA/83/0.5 NG: QFN/56/0.4 D: Operating ambient temperature: –40 to +85°C Chip versions A: Neither the security function nor an antenna included B: Security function included, an antenna not included C: Security function not included, an antenna included D: Security function and an antenna included ROM, RAM, and E2 DataFlash capacity 8: 512 Kbytes/64 Kbytes/8 Kbytes 7: 384 Kbyte/64 Kbytes/8 Kbytes Group name 3W: RX23W Group Series name RX200 Series Type of memory F: Flash memory version Renesas MCU Renesas semiconductor product

R01DS0342EJ0110 Rev.1.10 Page 9 of 109 Mar 30, 2021 RX23W Group 1. Overview

1.3 Block Diagram

Figure 1.2 shows a block diagram for the 85-pin BGA or 56-pin QFN product. Figure 1.2 Block Diagram (85-Pin BGA, 56-Pin QFN) ICUb: Interrupt controller DTCa: Data transfer controller DMACA: DMA controller WDTA: Watchdog timer IWDTa: Independent watchdog timer ELC: Event link controller CRC: CRC (cyclic redundancy check) calculator SCIg/SCIh: Serial communications interface RSPIa: Serial peripheral interface RIIC: I 2C bus interface SSI: Serial sound interface TPUa: 16-bit timer pulse unit MTU2a: Multi-function timer pulse unit 2 POE2a: Port output enable 2 TMR: 8-bit timer CMT: Compare match timer RTCe: Realtime clock DOC: Data operation circuit CAC: Clock frequency accuracy measurement circuit BLE: Bluetooth Low Energy SDHIa: SD host interface RSCAN: CAN module CTSU: Capacitive touch sensing unit LPT: Low power timer MPU: Memory protection unit 12-bit D/A converter × 2 channels RIICa × 1 channel DOC RTCe MTU2a × 5 channels 12-bit A/D converter × 14 channels CMT × 2 channels (unit 0) RSPIa × 1 channel CAC SCIh × 1 channel POE2a USB 2.0 host/function module Temperature sensor Comparator B × 2 channels TMR × 2 channels (unit 0) TMR × 2 channels (unit 1) SSI CMT × 2 channels (unit 1) TPUa × 6 channels BLE E2 DataFlash CRC ELC IWDTa WDTA SDHIa RSCAN CTSU LPT Clock generation circuit RX CPU RAM ROM Port 0 Port 1 Port 3 Port 4 SCIg × 3 channels (including IrDA × 1 channel) DTCa ICUb Port B Port C Port 2 Port D Port E DMACA × 4 channels MPU Operand bus Instruction bus Internal main bus 1 Internal main bus 2 Internal peripheral buses 1 to 6 Port J

R01DS0342EJ0110 Rev.1.10 Page 11 of 109 Mar 30, 2021 RX23W Group 1. Overview

1.4 Pin Functions

Table 1.4 lists the pin functions. Table 1.4 Pin Functions (1/4) Classifications Pin Name I/O Description Power supply VCC Input Power supply pin. Connect it to the system power supply. VCL — Connect this pin to the VSS pin via a 4.7 μF smoothing capacitor used to stabilize the internal power supply. Place the capacitor close to the pin. VSS Input Ground pin. Connect it to the system power supply (0 V). VBATT Input Backup power pin Clock XTAL Output Pins for connecting a crystal. An external clock can be input through the EXTAL pin.EXTAL Input XCIN Input Input/output pins for the sub-clock oscillator. Connec t a crystal between XCIN and XCOUT.XCOUT Output CLKOUT_RF Output Bluetooth-dedicated clock output pin for output of a 1-, 2-, or 4-MHz signal XTAL1_RF Input Pins for connecting the Bluetooth -dedicated clock oscillator. Connect a 32- MHz oscillator to these pins. The 83-pin LGA product includes a 32-MHz crystal resonator. XTAL1_RF and XTAL2_R should thus be externally connected to each other. XTAL2_RF Output CLKOUT Output Clock output pin. Operating mode control MD Input Pin for setting the operating mode. The signal levels on this pin must not be changed during operation. UB Input Pin used for boot mode (USB interface). UPSEL Input Pin used for boot mode (USB interface). System control RES# Input Reset pin. This MCU ent ers the reset state when this signal goes low. CAC CACREF Input Input pin for the clock fr equency accuracy measurement circuit. On-chip emulator FINED I/O FINE interface pin. Interrupts NMI Input Non-maskable interrupt request pin. IRQ0, IRQ1, IRQ4 to IRQ7 Input Interrupt request pins. 16-bit timer pulse unit TIOCB0 I/O The TGRB0 inputs capture input/output compare output/PWM output pins. TIOCB1 I/O The TGRB1 inputs capture input/output compare output/PWM output pins. TIOCB2 I/O The TGRB2 inputs capture input/output compare output/PWM output pins. TIOCA3, TIOCB3, TIOCC3, TIOCD3 I/O The TGRA3 to TGRD3 input capture input/output compare output/PWM output pins. TIOCA4, TIOCB4 I/O The TGRA4 and TGRB4 input capture input/output compare output/PWM output pins. TIOCB5 I/O The TGRB5 inputs capture input/output compare output/PWM output pins. TCLKA, TCLKB, TCLKC, TCLKD Input Input pins for external clock signals. Multi-function timer pulse unit 2 MTIOC0A, MTIOC0B, MTIOC0C I/O The TGRA0 to TGRC0 input capture input/output compare output/PWM output pins. MTIOC1A, MTIOC1B I/O The TGRA1 and TGRB1 input capture input/output compare output/PWM output pins. MTIOC2A, MTIOC2B I/O The TGRA2 and TGRB2 input capture input/output compare output/PWM output pins. MTIOC3A, MTIOC3B, MTIOC3C, MTIOC3D I/O The TGRA3 to TGRD3 input capture input/output compare output/PWM output pins. MTIOC4A, MTIOC4B, MTIOC4C, MTIOC4D I/O The TGRA4 to TGRD4 input capture input/output compare output/PWM output pins. MTCLKA, MTCLKB, MTCLKC, MTCLKD Input Input pins for the external clock.

R01DS0342EJ0110 Rev.1.10 Page 12 of 109 Mar 30, 2021 RX23W Group 1. Overview Port output enable 2 POE0#, POE1#, POE3#, POE8# Input Input pins for request signals to pl ace the MTU pins in the high impedance state. Realtime clock RTCOUT Output Output pin for the 1-Hz/64-Hz clock. RTCIC0, RTCIC1 Input Time capture event input pins. 8-bit timer TMO0 to TMO2 Output Compare match output pins. TMCI0 to TMCI3 Input Input pins for the external clock to be input to the counter. TMRI1 to TMRI3 Input Counter reset input pins. Serial communications interface (SCIg)  Asynchronous mode/clock synchronous mode SCK1, SCK5, SCK8 I/O Input/output pins for the clock. RXD1, RXD5, RXD8 Input Input pins for received data. TXD1, TXD5, TXD8 Output Output pins for transmitted data. CTS1#, CTS5#, CTS8# Input Input pins for contro lling the start of transmission and reception. RTS1#, RTS5#, RTS8# Output Output pins for c ontrolling the start of transmission and reception.  Simple I2C mode SSCL1, SSCL5, SSCL8 I/O Input/output pins for the I 2C clock. SSDA1, SSDA5, SSDA8 I/O Input/output pins for the I 2C data.  Simple SPI mode SCK1, SCK5, SCK8 I/O Input/output pins for the clock. SMISO1, SMISO5, SMISO8 I/O Input/output pins for slave transmit data. SMOSI1, SMOSI5, SMOSI8 I/O Input/output pins for master transmit data. SS1#, SS5#, SS8# Input Slave-select input pins. IrDA interface IRTXD5 Output Data output pin in the IrDA format. IRRXD5 Input Data input pin in the IrDA format. Serial communications interface (SCIh)  Asynchronous mode/clock synchronous mode SCK12 I/O Input/output pin for the clock. RXD12 Input Input pin for receiving data. TXD12 Output Output pin for transmitting data. CTS12# Input Input pin for controlling t he start of transmission and reception. RTS12# Output Output pin for controlling the start of transmission and reception.  Simple I2C mode SSCL12 I/O Input/output pin for the I 2C clock. SSDA12 I/O Input/output pin for the I 2C data.  Simple SPI mode SCK12 I/O Input/output pin for the clock. SMISO12 I/O Input/output pin for slave transmit data. SMOSI12 I/O Input/output pin for master transmit data. SS12# Input Slave-select input pin.  Extended serial mode RXDX12 Input Input pin for data reception by SCIf. TXDX12 Output Output pin for data transmission by SCIf. SIOX12 I/O Input/output pin for data re ception or transmission by SCIf. I 2C bus interface SCL I/O Input/output pin for I 2C bus interface clocks. Bus can be directly driven by the N-channel open drain output. SDA I/O Input/output pin for I 2C bus interface data. Bus can be directly driven by the N-channel open drain output. Table 1.4 Pin Functions (2/4) Classifications Pin Name I/O Description

R01DS0342EJ0110 Rev.1.10 Page 13 of 109 Mar 30, 2021 RX23W Group 1. Overview Serial peripheral interface RSPCKA I/O Input/output pin for the RSPI clock. MOSIA I/O Input/output pin for transmitting data from the RSPI master. MISOA I/O Input/output pin for transmitting data from the RSPI slave. SSLA0 I/O Input/output pin to select the slave for the RSPI. SSLA1, SSLA3 Output Output pins to select the slave for the RSPI. Serial sound interface SSISCK0 I/O SSI serial bit clock pin. SSIWS0 I/O Word selection pin. SSITXD0 Output Serial data output pin. SSIRXD0 Input Serial data input pin. AUDIO_MCLK Input Master clock pin for audio. CAN module CRXD0 Input Input pin CTXD0 Output Output pin SD host interface SDHI_CLK Output SD clock output pin SDHI_CMD I/O SD command output, response input signal pin SDHI_D3 to SDHI_D0 I/O SD data bus pins SDHI_CD Input SD card detection pin SDHI_WP Input SD write-protect signal USB 2.0 host/ function module VCC_USB Input Power supply pin for USB. Connect this pin to VCC or connect this pin to VSS via a 0.33 µF smoothing capacitor for stabilizing the internal power supply. VSS_USB Input Ground pin for USB. Connect this pin to VSS. USB0_DP I/O D+ I/O pin of the USB on-chip transceiver. USB0_DM I/O D- I/O pin of the USB on-chip transceiver. USB0_VBUS Input USB cable connection monitor pin. USB0_EXICEN Output Low-power control signal for the OTG chip. USB0_VBUSEN Output VBUS (5 V) supply enable signal for the OTG chip. USB0_OVRCURA, USB0_OVRCURB Input External overcurrent detection pins. USB0_ID Input Mini-AB connector ID input pin during operation in OTG mode. 12-bit A/D converter AN000 to AN007, AN016 to AN020, AN027 Input Input pins for the analog signals to be processed by the A/D converter. ADTRG0# Input Input pin for the external tri gger signal that start the A/D conversion. 12-bit D/A converter DA0, DA1 Output Analog output pins of the D/A converter. Comparator B CMPB2, CMPB3 Input Input pin for the analog signal to be processed by comparator B. CVREFB2, CVREFB3 Input Analog reference voltage supply pin for comparator B. CMPOB2, CMPOB3 Output Output pin for comparator B. CTSU TS2 to TS4, TS7, TS8, TS12, TS13, TS22, TS23, TS27, TS30, TS35 Output Electrostatic capacitance measurement pins (touch pins). TSCAP Output LPF connection pin. Analog power supply AVCC0 Input Analog voltage supply pin for the 12 -bit A/D converter and D/A converter. Connect this pin to VCC when not using the 12-bit A/D converter and D/A converter. AVSS0 Input Analog ground pin for the 12-bit A/D converter and D/A converter. Connect this pin to VSS when not using the 12-bit A/D converter and D/A converter. VREFH0 Input Analog reference voltage suppl y pin for the 12-bit A/D converter. VREFL0 Input Analog reference ground pin for the 12-bit A/D converter. Table 1.4 Pin Functions (3/4) Classifications Pin Name I/O Description

R01DS0342EJ0110 Rev.1.10 Page 14 of 109 Mar 30, 2021 RX23W Group 1. Overview I/O ports P03, P05, P07 I/O 3-bit input/output pins. P14 to P17 I/O 4-bit input/output pins. P21, P22, P25 to P27 I/O 5-bit input/output pins. P30, P31, P35 to P37 I/O 5-bit input/output pins (P35 input pin). P40 to P47 I/O 8-bit input/output pins. PB0, PB1, PB3, PB5, PB7 I/O 5-bit input/output pins. PC0, PC2 to PC7 I/O 7-bit input/output pins. PD3 I/O 1-bit input/output pins. PE0 to PE4 I/O 5-bit input/output pins. PJ3 I/O 1-bit input/output pin. Bluetooth low energy ANT I/O RF single I/O pin for RF transceiver Set the impedance of the signal line to 50 Ω. INT_ANT I/O Internal antenna connection pin Externally connect this pin to the ANT pin. DCLOUT Output RF transceiver power-supply output pin DCLIN_A, DCLIN_D Input RF transceiv er power-supply output connection pin In the case of an 83-pin LGA product, these pins should be externally connected to the DCLOUT pin. VCC_RF Input RF transceiv er power supply pin AVCC_RF Input RF transceiv er power supply pin VSS_RF Input RF trans ceiver ground pin Table 1.4 Pin Functions (4/4) Classifications Pin Name I/O Description

R01DS0342EJ0110 Rev.1.10 Page 15 of 109 Mar 30, 2021 RX23W Group 1. Overview

1.5 Pin Assignments

1.5.1 85-Pin BGA Figure 1.4 Pin Assignments of the 85-Pin BGA AVSS RX23W Group PTBG0085KB-A (85-pin BGA) (Upper perspective view) VCL XCIN XCO UT P37/X TAL VSS P36/E XTAL VCC P30 P25 AVCC

0 P05 P03 MD RES# P35 P31 P27 P26 P17

L0 P43 P42 VSS_ RF P21 VCC_ USB USB0 _DM P44 P45 P46 VSS_ RF VSS_ USB USB0 _DP P47/CL KOUT_ RF PD3 VSS_ RF VSS_ RF PC6 PC7 DCLI N_A PE0 VSS_ RF VSS_ RF PC5 PC4 DCLI N_D PE2 PE3 VSS_ RF VSS_ RF VSS_ RF PB3 VSS_ RF PC2 PC3 PB7VCC_ RF PE1 PE4 VSS_ RF PB0 PB1 PB5 VSS_ RF PC0 VSS_ RF DCLO UT AVCC _RF XTAL 1_RF XTAL 2_RF VSS VCC VSS_ RF ANT VSS_ RF K J H G F E D C B A 1 0 987654321 K J H G F E D C B A 1 0 987654321

R01DS0342EJ0110 Rev.1.10 Page 16 of 109 Mar 30, 2021 RX23W Group 1. Overview 1.5.2 83-Pin LGA Figure 1.5 Pin Assignments of the 83-Pin LGA 31 2130 29 28 27 26 25 24 23 22 63 62 61 60 59 58 57 78 77 76 41 42 43 44 45 46 47 1 112 3 4 5 6 7 8 9 10 82 81 79 80 RX23W Group PTLG0083KA-A (83-pin LGA) (Upper perspective view) VCC PE1 P22 INT_ANT P03 VCL MD XCIN XCOUT P37/ XTAL VBATT P25 P05 PJ3 RES# P35 P31 P30 P27 P26 P17 PE2 PE3 PE4 PB0 PB1 PB3 PB5 PB7 PC2 VSS_RF VSS_RF VSS_RF VSS_RF VSS_RF VSS_RF VSS_RF VSS AVSS0 AVCC0 VREFH0 VREHL0 P43 P47/CLK OUT_RF P45 PE0 P07 P40 P41 P42 P44 P46 PD3 DCLIN_ A DCLIN_ D DCL OUT P36/ EXTAL P16 P15 P14 PC7 PC6 PC4 PC0 P21 VCC_ USB USB0_ DM VSS_ USB PC5 PC3 ANT VSS_RF VSS_RF VSS_RF VSS_RF VSS_RF VSS_RF VSS_RF VSS_RF XTAL2_ RF XTAL1_ RF VSS_RF USB0_ DP

R01DS0342EJ0110 Rev.1.10 Page 17 of 109 Mar 30, 2021 RX23W Group 1. Overview 1.5.3 56-Pin QFN Figure 1.6 Pin Assignments of the 56-Pin QFN VCL MD XCIN XCOUT RES# P37/XTAL VSS P36/EXTAL VCC P35 P31 P30 P27 P26 VSS_RF PC3 PC4 PC5 PC6 PC7 VSS_USB USB0_DP USB0_DM VCC_USB P14 P15 P16 P17 RX23W Group PVQN0056LA-A (56-pin QFN) (Top view) PE2 VCC_RF DCLIN_D DCLIN_A PD3 P47/CLKOUT_RF P46 P45 P41 VREFL0 VREFH0 AVCC0 P05 AVSS0 PE3 PE4 DCLOUT AVCC_RF XTAL1_RF XTAL2_RF VSS PB0 VCC PB1 ANT PB7 PC0 PC2 Note: VSS_RF is assigned as the exposed die pad. For details, refer to Appendix 2, Package Dimensions.

R01DS0342EJ0110 Rev.1.10 Page 18 of 109 Mar 30, 2021 RX23W Group 1. Overview

1.6 List of Pins and Pin Functions

1.6.1 85-Pin BGA Table 1.5 List of Pins and Pin Functions (85-Pin BGA) (1/2) Pin No. Power Supply, Clock, System Control I/O Port Timers (MTU, TPU, TMR, RTC, CMT, POE, CAC) Communications (SCI, RSPI, RIIC, RSCAN, USB, SSI) Memory Interface (SDHI) Touch sensing Others A1 P25 MTIOC4C/MTCLKB/TIOCA4 TS4 ADTRG0# A2 P30 MTIOC4B/TMRI3/POE8#/ RTCIC0 RXD1/SMISO1/SSCL1/ AUDIO_MCLK IRQ0/CMPOB3 A3 VCC A4 EXTAL P36 A5 VSS A6 XTAL P37 A7 XCOUT A8 XCIN A9 VCL A10 AVSS0 B1 P17 MTIOC3A/MTIOC3B/TMO1/ POE8#/TIOCB0/TCLKD SCK1/MISOA/SDA/SSITXD0 IRQ7/CMPOB2 B2 P26 MTIOC2A/TMO1 TXD1/SMOSI1/SSDA1/SSIRXD0/ USB0_VBUSEN TS3 CMPB3 B3 P27 MTIOC2B/TMCI3 SCK1/SSIWS0 TS2 CVREFB3 B4 P31 MTIOC4D/TMCI2/RTCIC1 CTS1#/RTS1#/SS1#/SSISCK0 IRQ1 B5 UPSEL P35 NMI B6 RES# B7 MD FINED B8 P03 DA0 B9 P05 DA1 B10 AVCC0 C1 P14 MTIOC3A/MTCLKA/TMRI2/ TIOCB5/TCLKA CTS1#/RTS1#/SS1#/CTXD0/ USB0_OVRCURA TS13 IRQ4/ CVREFB2 C2 P15 MTIOC0B/MTCLKB/TMCI2/ TIOCB2/TCLKB RXD1/SMISO1/SSCL1/CRXD0 TS12 IRQ5/CMPB2 C3 P16 MTIOC3C/MTIOC3D/TMO2/ TIOCB1/TCLKC/RTCOUT TXD1/SMOSI1/SSDA1/MOSIA/SCL/ USB0_VBUS/USB0_VBUSEN/ USB0_OVRCURB IRQ6/ ADTRG0# C4 P22 MTIOC3B/MTCLKC/TMO0/ TIOCC3 USB0_OVRCURB/AUDIO_MCLK TS7 C5 VBATT C6 PJ3 MTIOC3C C7 P07 ADTRG0# C8 P41 AN001 C9 P40 AN000 C10 VREFH0 D1 USB0_DM D2 VCC_USB D3 P21 MTIOC1B/TMCI0/TIOCA3 USB0_EXICEN/SSIWS0 TS8 D4 VSS_RF D8 P42 AN002 D9 P43 AN003 D10 VREFL0 E1 USB0_DP E2 VSS_USB E3 VSS_RF E8 P46 AN006 E9 P45 AN005 E10 P44 AN004 F1 UB PC7 MTIOC3A/MTCLKB/TMO2 TXD8/SMOSI8/SSDA8/MISOA CACREF

R01DS0342EJ0110 Rev.1.10 Page 19 of 109 Mar 30, 2021 RX23W Group 1. Overview F2 PC6 MTIOC3C/MTCLKA/TMCI2 RXD8/SMISO8/SSCL8/MOSIA/ USB0_EXICEN TS22 F3 VSS_RF F8 VSS_RF F9 PD3 POE8# AN027 F10 P47 AN007/ CLKOUT_RF G1 PC4 MTIOC3D/MTCLKC/TMCI1/ POE0# CTS8#/RTS8#/SS8#/SSLA0/SCK5 SDHI_D1 TSCAP G2 PC5 MTIOC3B/MTCLKD/TMRI2 SCK8/RSPCKA/USB0_ID TS23 G3 VSS_RF G8 VSS_RF G9 PE0 SCK12 AN016 G10 DCLIN_A H1 PC3 MTIOC4D/TCLKB TXD5/SMOSI5/SSDA5/IRTXD5 SDHI_D0 TS27 H2 PC2 MTIOC4B/TCLKA RXD5/SMISO5/SSCL5/SSLA3/ IRRXD5 SDHI_D3 TS30 H3 VSS_RF H4 PB3 MTIOC0A/MTIOC4A/TMO0/ POE3#/TIOCD3/TCLKD SDHI_WP H5 VSS_RF H6 VSS_RF H7 VSS_RF H8 PE3 MTIOC4B/POE8# CTS12#/RTS12#/SS12#/ AUDIO_MCLK AN019/ CLKOUT H9 PE2 MTIOC4A RXD12/RXDX12/SMISO12/SSCL12 IRQ7/AN018 H10 DCLIN_D J1 PC0 MTIOC3C/TCLKC CTS5#/RTS5#/SS5#/SSLA1 TS35 J2 VSS_RF J3 PB7 MTIOC3B/TIOCB5 SDHI_D2 J4 PB5 MTIOC2A/MTIOC1B/TMRI1/ POE1#/TIOCB4 USB0_VBUS SDHI_CD J5 PB1 MTIOC0C/MTIOC4C/TMCI0/ TIOCB3 SDHI_CLK IRQ4 J6 PB0 TIOCA3 RSPCKA SDHI_CMD J7 VSS_RF J8 PE4 MTIOC4D/MTIOC1A AN020/ CLKOUT J9 PE1 MTIOC4C TXD12/TXDX12/SIOX12/SMOSI12/ SSDA12 AN017 J10 VCC_RF K1 VSS_RF K2 ANT K3 VSS_RF K4 VCC K5 VSS K6 XTAL2_RF K7 XTAL1_RF K8 AVCC_RF K9 DCLOUT K10 VSS_RF Table 1.5 List of Pins and Pin Functions (85-Pin BGA) (2/2) Pin No. Power Supply, Clock, System Control I/O Port Timers (MTU, TPU, TMR, RTC, CMT, POE, CAC) Communications (SCI, RSPI, RIIC, RSCAN, USB, SSI) Memory Interface (SDHI) Touch sensing Others

R01DS0342EJ0110 Rev.1.10 Page 20 of 109 Mar 30, 2021 RX23W Group 1. Overview 1.6.2 83-Pin LGA Table 1.6 List of Pins and Pin Functions (83-Pin LGA) (1/2) Pin No. Power Supply, Clock, System Control I/O Port Timers (MTU, TPU, TMR, RTC, CMT, POE, CAC) Communications (SCI, RSPI, RIIC, RSCAN, USB, SSI) Memory Interface (SDHI) Touch sensing Others

1 P22 MTIOC3B/MTCLKC/TMO0/

USB0_OVRCURB/AUDIO_MCLK TS7

2 P21 MTIOC1B/TMCI0/TIOCA3 USB0_EXICEN/SSIWS0 TS8

3 VCC_USB

4 USB0_DM

5 USB0_DP

6 VSS_USB

7 PC5 MTIOC3B/MTCLKD/TMRI2 SCK8/RSPCKA/USB0_ID TS23

8 PC3 MTIOC4D/TCLKB TXD5/SMOSI5/SSDA5/IRTXD5 SDHI_D0 TS27

9 VSS_RF

10 ANT

11 INT_ANT

12 VSS_RF

13 VSS_RF

14 VSS_RF

15 VSS_RF

16 VSS_RF

17 VSS_RF

18 VSS_RF

19 VSS_RF

20 VSS_RF

21 PE1 MTIOC4C TXD12/TXDX12/SIOX12/SMOSI12/

22 PE0 SCK12 AN016

23 P45 AN005

24 P47 AN007/

CLKOUT_RF

25 P43 AN003

26 VREFL0

27 VREFH0

28 AVCC0

29 AVSS0

30 VSS

31 VCC

32 P03 DA0

33 VCL

34 MD FINED

35 XCIN

36 XCOUT

37 XTAL P37

38 EXTAL P36

39 VBATT

40 P25 MTIOC4C/MTCLKB/TIOCA4 TS4 ADTRG0#

41 P16 MTIOC3C/MTIOC3D/TMO2/

TXD1/SMOSI1/SSDA1/MOSIA/SCL/ USB0_VBUS/USB0_VBUSEN/ USB0_OVRCURB IRQ6/ ADTRG0#

42 P15 MTIOC0B/MTCLKB/TMCI2/

RXD1/SMISO1/SSCL1/CRXD0 TS12 IRQ5/CMPB2

43 P14 MTIOC3A/MTCLKA/TMRI2/

CTS1#/RTS1#/SS1#/CTXD0/ USB0_OVRCURA TS13 IRQ4/ CVREFB2

44 UB PC7 MTIOC3A/MTCLKB/TMO2 TXD8/SMOSI8/SSDA8/MISOA CACREF

45 PC6 MTIOC3C/MTCLKA/TMCI2 RXD8/SMISO8/SSCL8/MOSIA/

USB0_EXICEN TS22

46 PC4 MTIOC3D/MTCLKC/TMCI1/

POE0# CTS8#/RTS8#/SS8#/SSLA0/SCK5 SDHI_D1 TSCAP

R01DS0342EJ0110 Rev.1.10 Page 21 of 109 Mar 30, 2021 RX23W Group 1. Overview

47 PC0 MTIOC3C/TCLKC CTS5#/RTS5#/SS5#/SSLA1 TS35

48 PC2 MTIOC4B/TCLKA RXD5/SMISO5/SSCL5/SSLA3/

SDHI_D3 TS30

49 PB7 MTIOC3B/TIOCB5 SDHI_D2

50 PB5 MTIOC2A/MTIOC1B/TMRI1/

POE1#/TIOCB4 USB0_VBUS SDHI_CD

51 PB3 MTIOC0A/MTIOC4A/TMO0/

POE3#/TIOCD3/TCLKD SDHI_WP

52 PB1 MTIOC0C/MTIOC4C/TMCI0/

SDHI_CLK IRQ4

53 PB0 TIOCA3 RSPCKA SDHI_CMD

54 PE4 MTIOC4D/MTIOC1A AN020/

55 PE3 MTIOC4B/POE8# CTS12#/RTS12#/SS12#/

AUDIO_MCLK AN019/ CLKOUT

56 PE2 MTIOC4A RXD12/RXDX12/SMISO12/SSCL12 IRQ7/AN018

57 PD3 POE8# AN027

58 P46 AN006

59 P44 AN004

60 P42 AN002

61 P41 AN001

62 P40 AN000

63 P07 ADTRG0#

64 P05 DA1

65 PJ3 MTIOC3C

66 RES#

67 UPSEL P35 NMI

68 P31 MTIOC4D/TMCI2/RTCIC1 CTS1#/RTS1#/SS1#/SSISCK0 IRQ1

69 P30 MTIOC4B/TMRI3/POE8#/

AUDIO_MCLK IRQ0/CMPOB3

70 P27 MTIOC2B/TMCI3 SCK1/SSIWS0 TS2 CVREFB3

71 P26 MTIOC2A/TMO1 TXD1/SMOSI1/SSDA1/SSIRXD0/

USB0_VBUSEN TS3 CMPB3

72 P17 MTIOC3A/MTIOC3B/TMO1/

POE8#/TIOCB0/TCLKD SCK1/MISOA/SDA/SSITXD0 IRQ7/CMPOB2

73 VSS_RF

74 XTAL1_RF

75 XTAL2_RF

76 DCLOUT

77 DCLIN_D

78 DCLIN_A

79 VSS_RF

80 VSS_RF

81 VSS_RF

82 VSS_RF

83 VSS_RF

Table 1.6 List of Pins and Pin Functions (83-Pin LGA) (2/2) Pin No. Power Supply, Clock, System Control I/O Port Timers (MTU, TPU, TMR, RTC, CMT, POE, CAC) Communications (SCI, RSPI, RIIC, RSCAN, USB, SSI) Memory Interface (SDHI) Touch sensing Others

R01DS0342EJ0110 Rev.1.10 Page 22 of 109 Mar 30, 2021 RX23W Group 1. Overview 1.6.3 56-Pin QFN Table 1.7 List of Pins and Pin Functions (56-Pin QFN) (1/2) Pin No. Power Supply, Clock, System Control I/O Port Timers (MTU, TPU, TMR, RTC, CMT, POE, CAC) Communications (SCI, RSPI, RIIC, RSCAN, USB, SSI) Touch sensing Others 1V C L 2M D FINED 3X C I N

4 XCOUT

5 RES#

7 VSS

8 EXTAL P36

10 UPSEL P35 NMI

11 P31 MTIOC4D/TMCI2/RTCIC1 CTS1#/RTS1#/SS1#/SSISCK0 IRQ1

12 P30 MTIOC4B/TMRI3/POE8#/RTCIC0 RXD1/SMISO1/SSCL1/AUDIO_MCLK IRQ0/CMPOB3

13 P27 MTIOC2B/TMCI3 SCK1/SSIWS0 TS2 CVREFB3

14 P26 MTIOC2A/TMO1 TXD1/SMOSI1/SSDA1/SSIRXD0/

USB0_VBUSEN TS3 CMPB3

15 P17 MTIOC3A/MTIOC3B/TMO1/POE8#/

SCK1/MISOA/SDA/SSITXD0 IRQ7/CMPOB2

16 P16 MTIOC3C/MTIOC3D/TMO2/TIOCB1/

TXD1/SMOSI1/SSDA1/MOSIA/SCL/ USB0_VBUS/USB0_VBUSEN/ USB0_OVRCURB IRQ6/ADTRG0#

17 P15 MTIOC0B/MTCLKB/TMCI2/TIOCB2/

RXD1/SMISO1/SSCL1/CRXD0 TS12 IRQ5/CMPB2

18 P14 MTIOC3A/MTCLKA/TMRI2/TIOCB5/

CTS1#/RTS1#/SS1#/CTXD0/ USB0_OVRCURA TS13 IRQ4/CVREFB2

19 VCC_USB

20 USB0_DM

21 USB0_DP

22 VSS_USB

23 UB PC7 MTIOC3A/MTCLKB/TMO2 TXD8/SMOSI8/SSDA8/MISOA CACREF

24 PC6 MTIOC3C/MTCLKA/TMCI2 RXD8/SMISO8/SSCL8/MOSIA/

USB0_EXICEN TS22

25 PC5 MTIOC3B/MTCLKD/TMRI2 SCK8/RSPCKA/USB0_ID TS23

26 PC4 MTIOC3D/MTCLKC/TMCI1/POE0# CTS8#/RTS8#/SS8#/SSLA0/SCK5 TSCAP

27 PC3 MTIOC4D/TCLKB TXD5/SMOSI5/SSDA5/IRTXD5 TS27

28 VSS_RF

29 PC2 MTIOC4B/TCLKA RXD5/SMI SO5/SSCL5/SSLA3/IRRXD5 TS30

30 PC0 MTIOC3C/TCLKC CTS5#/RTS5#/SS5#/SSLA1 TS35

31 PB7 MTIOC3B/TIOCB5

32 ANT

33 PB1 MTIOC0C/MTIOC4C/TMCI0/TIOCB3 IRQ4

34 VCC

35 PB0 TIOCA3 RSPCKA

36 VSS

37 XTAL2_RF

38 XTAL1_RF

39 AVCC_RF

40 DCLOUT

41 PE4 MTIOC4D/MTIOC1A AN020/CLKOUT

42 PE3 MTIOC4B/POE8# AUDIO_MCLK AN019/CLKOUT

43 PE2 MTIOC4A IRQ7/AN018

44 VCC_RF

45 DCLIN_D

46 DCLIN_A

47 PD3 POE8# AN027

R01DS0342EJ0110 Rev.1.10 Page 23 of 109 Mar 30, 2021 RX23W Group 1. Overview Note: VSS_RF is assigned as the exposed die pad. For details, refer to Appendix 2, Package Dimensions.

48 P47 AN007/

CLKOUT_RF

49 P46 AN006

50 P45 AN005

51 P41 AN001

52 VREFL0

53 VREFH0

54 AVCC0

55 P05 DA1

56 AVSS0

Table 1.7 List of Pins and Pin Functions (56-Pin QFN) (2/2) Pin No. Power Supply, Clock, System Control I/O Port Timers (MTU, TPU, TMR, RTC, CMT, POE, CAC) Communications (SCI, RSPI, RIIC, RSCAN, USB, SSI) Touch sensing Others

R01DS0342EJ0110 Rev.1.10 Page 24 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics 2. Electrical Characteristics

2.1 Absolute Maximum Ratings

Caution: Permanent damage to the MCU may be caused if absolute maximum ratings are exceeded. To preclude any malfunctions due to noise interference, insert capacitors with high frequency characteristics between the VCC and VSS pins, between the AVCC0 and AVSS0 pins, between the VCC_USB and VSS_USB pins, between the VREFH0 and VREFL0 pins, between the VCC_RF and VSS_RF pins, and between the AVCC_RF and VSS_RF pins. Place capacitors with values of about 2.2 µF in the case of the VCC_RF pin and about 0.1 µF otherwise as close as possible to every power supply pin, and use the shortest and thickest possible traces for the connections. Connect the VCL pin to a VSS pin via a 4.7 µF capacitor. The capacitor must be placed close to the pin. For details, refer to section 2.16.1, Connecting VCL Capacitor and Bypass Capacitors. Do not input signals or an I/O pull-up power supply to ports other than 5-V tolerant ports while the device is not powered. The current injection that results from input of such a signal or I/O pull-up may cause malfunction and the abnormal current th at passes in the device at this time may cause degradation of internal elements. Even if –0.3 to +6.5 V is input to 5-V tolerant ports, it will not cause problems such as damage to the MCU. Note 1. Ports 16, 17, 30, 31, and B5 are 5 V tolerant. Table 2.1 Absolute Maximum Ratings Conditions: VSS = AVSS0 = VREFL0 = VSS_USB = VSS_RF = 0 V Item Symbol Value Unit Power supply voltage VCC, VCC_USB –0.3 to +4.0 V VBATT power supply voltage VBATT –0.3 to +4.0 V Input voltage Ports for 5 V tolerant* 1 Vin –0.3 to +6.5 V P03, P05, P07, P40 to P47 –0.3 to AVCC0 + 0.3 ANT –1.0 to +1.4 XTAL1_RF, XTAL2_RF –0.3 to +1.4 DCLIN_A, DCLIN_D –0.3 to +2.2 Ports other than above –0.3 to VCC + 0.3 Reference power supply voltage VREFH0 –0.3 to AVCC0 + 0.3 V Analog power supply voltage AVCC0 –0.3 to +4.0 V VCC_RF –0.3 to +4.0 V AVCC_RF –0.3 to +4.0 V Analog input voltage When AN000 to AN007 are used VAN –0.3 to AVCC0 + 0.3 V When AN016 to AN020, AN027 are used –0.3 to VCC + 0.3 Operating temperature Topr –40 to +85 °C Storage temperature Tstg –55 to +125 °C

R01DS0342EJ0110 Rev.1.10 Page 25 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. P41 and P47: Set AVCC0 to the same voltage as VCC. If conditions other than those above are applicable, those listed below apply. While VCC > 2.4 V: AVCC and VCC can be set independently when AVCC0 ≥ 2.4 V While VCC ≤ 2.4 V: AVCC and VCC can be set independently when AVCC0 ≥ VCC Note 2. When powering on the VCC and AVCC0 pins, power them on at the same time or the VCC pin first and then the AVCC0 pin. Note 3. Set VCC_RF and AVCC_RF to the same voltage as VCC. Table 2.2 Recommended Operating Voltage Conditions Item Symbol Conditions Min. Typ. Max. Unit Power supply voltages VCC*1, *2, *3 When USB is not used 1.8 — 3.6 V When USB is used 3.0 — 3.6 VSS — 0 — USB power supply voltages VCC_USB When USB regulator is not used — VCC — V VSS_USB — 0 — VBATT power supply voltage VBATT 1.8 — 3.6 V Analog power supply voltages AVCC0 *1, *2 1.8 — 3.6 V AVSS0 — 0 — VREFH0 1.8 — AVCC0 VREFL0 — 0 — BLE power supply voltages VCC_RF *3 1.8 — 3.6 V AVCC_RF*3 1.8 — 3.6 VSS_RF — 0 —

R01DS0342EJ0110 Rev.1.10 Page 26 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics

2.2 DC Characteristics

Table 2.3 DC Characteristics (1) Conditions: 2.7 V ≤ VCC = VCC_USB = VCC_RF = AVCC_RF ≤ 3.6 V, 2.7 V ≤ AVCC0 ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Schmitt trigger input voltage RIIC input pin (except for SMBus, 5 V tolerant) V IH VCC × 0.7 — 5.8 V Ports 16, 17, port B5 (5 V tolerant) VCC × 0.8 — 5.8 Ports 14, 15, ports 21, 22, 25 to 27, ports 35 to 37, ports B0, B1, B3, B5, B7, ports C0, C2 to C7, ports D3, ports E0 to E4, port J3, Ports 30, 31 (when time capture event input is not selected), RES# VCC × 0.8 — VCC + 0.3 Ports 03, 05, 07, ports 40 to 47 AVCC0 × 0.8 — AVCC0 + 0.3 Ports 30, 31 (when time capture event input is selected) When VCC is supplied VCC × 0.8 — VCC + 0.3 When VBATT is supplied VBATT × 0.8 — VBATT + 0.3 Ports 03, 05, 07, ports 40 to 47 V IL –0.3 — AVCC0 × 0.2 RIIC input pin (except for SMBus) –0.3 — VCC × 0.3 Other than RIIC input pin or ports 30, 31 –0.3 — VCC × 0.2 Ports 30, 31 (when time capture event input is selected) When VCC is supplied –0.3 — VCC × 0.3 When VBATT is supplied –0.3 — VBATT × 0.3 Ports 03, 05, 07, ports 40 to 47 ΔV T AVCC0 × 0.1 — — RIIC input pin (except for SMBus) VCC × 0.05 — — Ports 16, 17, Port B5 VCC × 0.05 — — Other than RIIC input pin VCC × 0.1 — — Input level voltage (except for Schmitt trigger input pins) MD V IH VCC × 0.9 — VCC + 0.3 V EXTAL (external clock input) VCC × 0.8 — VCC + 0.3 RIIC input pin (SMBus) 2.1 — VCC + 0.3 MD V IL –0.3 — VCC × 0.1 EXTAL (external clock input) –0.3 — VCC × 0.2 RIIC input pin (SMBus) –0.3 — 0.8

R01DS0342EJ0110 Rev.1.10 Page 27 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Table 2.4 DC Characteristics (2) Conditions: 1.8 V ≤ VCC = VCC_USB = VCC_RF = AVCC_RF ≤ 2.7 V, 1.8 V ≤ AVCC0 < 2.7 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Schmitt trigger input voltage Ports 16, 17, port B5 (5 V tolerant) V IH VCC × 0.8 — 5.8 V Ports 14, 15, ports 21, 22, 25 to 27, ports 30, 31, 35 to 37, ports B0, B1, B3, B5, B7, ports C0, C2 to C7, ports D3, ports E0 to E4, port J3, RES# VCC × 0.8 — VCC + 0.3 Ports 03, 05, 07, ports 40 to 47 AVCC0 × 0.8 — AVCC0 + 0.3 Ports 03, 05, 07, ports 40 to 47 V IL –0.3 — AVCC0 × 0.2 Ports other than above –0.3 — VCC × 0.2 Ports 03, 05, 07, ports 40 to 47 ΔVT AVCC0 × 0.01 — — Ports other than above VCC × 0.01 — — Input level voltage (except for Schmitt trigger input pins) MD V IH VCC × 0.9 — VCC + 0.3 V EXTAL (external clock input) VCC × 0.8 — VCC + 0.3 MD V IL –0.3 — VCC × 0.1 EXTAL (external clock input) –0.3 — VCC × 0.2 Table 2.5 DC Characteristics (3) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Input leakage current RES#, MD, port 35 Iin —— 1 . 0 µ A V in = 0 V, VCC Three-state leakage current (off-state) Ports for 5 V tolerant ITSI —— 1 . 0 µA Vin = 0 V, 5.8 V Ports except for 5 V tolerant — — 0.2 µA V in = 0 V, VCC Input capacitance All input pins (except for port 35, USB0_DM, USB0_DP) C in — — 15 pF V in = 0 mV, f = 1 MHz, T a = 25°C Port 35, USB0_DM, USB0_DP — — 30 Table 2.6 DC Characteristics (4) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Input pull-up resistor All ports (except for port 35) RU 10 20 50 k Ω Vin = 0 V

R01DS0342EJ0110 Rev.1.10 Page 28 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Table 2.7 DC Characteristics (5) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Typ. *4 Max. Unit Test Conditions Supply current High-speed operating mode Normal operating mode No peripheral operation* ICLK = 54 MHz I CC 6.5 — mA ICLK = 32 MHz 4.1 — ICLK = 16 MHz 2.9 — ICLK = 8 MHz 2.2 — ICLK = 4 MHz 1.9 — All peripheral operation: Normal ICLK = 54 MHz* 11 26.5 — ICLK = 32 MHz*3 21.0 — ICLK = 16 MHz*3 11.8 — ICLK = 8 MHz*3 6.6 — ICLK = 4 MHz*3 4.2 — All peripheral operation: Max. ICLK = 54 MHz* 11 — 53.3 ICLK = 32 MHz*3 — 40.8 Increase due to operation of the Trusted Secure IP PCLKB = 32 MHz — 2 Sleep mode No peripheral operation* ICLK = 54 MHz 3.5 — ICLK = 32 MHz 2.4 — ICLK = 16 MHz 1.9 — ICLK = 8 MHz 1.6 — ICLK = 4 MHz 1.5 — All peripheral operation: Normal ICLK = 54 MHz*11 13.4 — ICLK = 32 MHz*3 12.5 — ICLK = 16 MHz*3 7.3 — ICLK = 8 MHz*3 4.6 — ICLK = 4 MHz*3 3.3 — Deep sleep mode No peripheral operation* ICLK = 54 MHz 2.3 — ICLK = 32 MHz 1.5 — ICLK = 16 MHz 1.3 — ICLK = 8 MHz 1.2 — ICLK = 4 MHz 1.1 — All peripheral operation: Normal ICLK = 54 MHz* 11 10.6 — ICLK = 32 MHz*3 9.9 — ICLK = 16 MHz*3 5.9 — ICLK = 8 MHz*3 3.8 — ICLK = 4 MHz*3 2.7 — Increase during BGO operation*5 2.5 — Middle-speed operating mode Normal operating mode No peripheral operation* ICLK = 12 MHz I CC 2.7 — mA ICLK = 8 MHz 1.8 — ICLK = 4 MHz 1.4 — ICLK = 1 MHz 1.1 — All peripheral operation: Normal*7 ICLK = 12 MHz 9.6 — ICLK = 8 MHz 6.2 — ICLK = 4 MHz 3.8 — ICLK = 1 MHz 2.3 —

R01DS0342EJ0110 Rev.1.10 Page 29 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. Supply current values do not include the output charge/disc harge current from all pins. The values apply when internal pull-up MOSs are in the off state. Note 2. Clock supply to the peripheral func tions is stopped. This does not include BGO operation. The clock source is PLL. FCLK, and PCLK are set to divided by 64. Note 3. Clocks are supplied to the peripheral functions. This does not include BGO operation. The clock source is PLL. FCLK, and PCLK are the same frequency as that of ICLK. Note 4. Values when VCC is 3.3 V. Note 5. This is the increase when data is programmed to or er ased from the ROM or E2 DataFlash during program execution. Note 6. Clock supply to the peripheral func tions is stopped. The clock source is PLL when ICLK is 12 MHz and HOCO for other cases. FCLK, and PCLK are set to divided by 64. Note 7. Clocks are supplied to the peripheral functions. The clock source is PLL when ICLK is 12 MHz and HOCO for other cases. FCLK, and PCLK are the same frequency of that of the ICLK. Note 8. Clock supply to the peripheral func tions is stopped. The clock source is the sub oscillation circuit. FCLK, and PCLK are set to divided by 64. Note 9. Clocks are supplied to the peripheral functions. The clock source is the sub oscillation circuit. FCLK, and PCLK are the same frequency as that of ICLK. Note 10. This is the value when the MSTPCRA.MSTPA17 (12-bit A/D converter module stop bit) is in the module stop state. Note 11. Clocks are supplied to the peripheral functions. This does not include BGO operation. The clock source is PLL. FCLK, and PCLKB are set to divided by 2 and PCLKA and PCLKD are the same frequency as that of ICLK. Supply current Middle-speed operating mode Normal operating mode All peripheral operation: Max.* ICLK = 12 MHz I CC — 16.7 mA Sleep mode No peripheral operation*6 ICLK = 12 MHz 1.9 — ICLK = 8 MHz 1.2 — ICLK = 4 MHz 1.1 — ICLK = 1 MHz 1.0 — All peripheral operation: Normal*7 ICLK = 12 MHz 6.1 — ICLK = 8 MHz 4.4 — ICLK = 4 MHz 3.0 — ICLK = 1 MHz 2.0 — Deep sleep mode No peripheral operation* ICLK = 12 MHz 1.6 — ICLK = 8 MHz 1.0 — ICLK = 4 MHz 0.9 — ICLK = 1 MHz 0.8 — All peripheral operation: Normal*7 ICLK = 12 MHz 5.1 — ICLK = 8 MHz 3.7 — ICLK = 4 MHz 2.6 — ICLK = 1 MHz 1.8 — Increase during BGO operation*5 2.5 — Low-speed operating mode Normal operating mode No peripheral operation* ICLK = 32 kHz I CC 5.2 — µA All peripheral operation: Normal 9, *10 ICLK = 32 kHz 22.3 — All peripheral operation: Max.* 9, *10 ICLK = 32 kHz — 74.4 Sleep mode No peripheral operation*8 ICLK = 32 kHz 3.0 — All peripheral operation: Normal* ICLK = 32 kHz 13.1 — Deep sleep mode No peripheral operation* ICLK = 32 kHz 2.4 — All peripheral operation: Normal* ICLK = 32 kHz 10.5 — Item Symbol Typ. *4 Max. Unit Test Conditions

R01DS0342EJ0110 Rev.1.10 Page 30 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.1 Voltage Dependency in High-Speed Operating Mode (Reference Data) Note 1. All peripheral operations exc ept any BGO operation are operating normally. Indicates the average of the typical samples through actual measurement during product evaluation. Note 2. All peripheral operations exc ept any BGO operation are operating at maximum. Indicates the average of the upper-limit samples through actual measurement during product evaluation. ICC (mA) VCC (V) Ta = 25°C, ICLK = 54 MHz*1 Ta = 25°C, ICLK = 32 MHz*1 Ta = 25°C, ICLK = 16 MHz*1 Ta = 25°C, ICLK = 8 MHz*1 Ta = 25°C, ICLK = 4 MHz*1 Ta = 85°C, ICLK = 54 MHz*2 Ta = 85°C, ICLK = 32 MHz*2 Ta = 85°C, ICLK = 16 MHz*2 Ta = 85°C, ICLK = 8 MHz*2 Ta = 85°C, ICLK = 4 MHz*2

R01DS0342EJ0110 Rev.1.10 Page 31 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.2 Voltage Dependency in Middle-Speed Operating Mode (Reference Data) Note 1. All peripheral operations exce pt any BGO operation are operating normally. Indicates the average of the typical samples through actual measurement during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. Indicates the average of the upper-limit samples through actual measurement during product evaluation. ICC (mA) VCC (V) Ta = 25°C, ICLK = 12 MHz*1 Ta = 25°C, ICLK = 8 MHz*1 Ta = 25°C, ICLK = 4 MHz*1 Ta = 25°C, ICLK = 1 MHz*1 Ta = 85°C, ICLK = 12 MHz*2 Ta = 85°C, ICLK = 8 MHz*2 Ta = 85°C, ICLK = 4 MHz*2 Ta = 85°C, ICLK = 1 MHz*2

R01DS0342EJ0110 Rev.1.10 Page 32 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.3 Voltage Dependency in Low-Speed Operating Mode (Reference Data) Note 1. All peripheral operations except any BGO operation are operating normally. Indicates the average of the typical samples through actual measurement during product evaluation. Note 2. All peripheral operations except any BGO operation are operating at maximum. Indicates the average of the upper-limit samples through actual measurement during product evaluation. ICC (mA) VCC (V) Ta = 25°C, ICLK = 32 kHz*1 Ta = 85°C, ICLK = 32 kHz*2

R01DS0342EJ0110 Rev.1.10 Page 33 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. Supply current values are with all output pins unloaded and all input pull-up MOSs in the off state. Note 2. The IWDT, LVD, and CMPB are stopped. Note 3. When VCC is 3.3 V. Note 4. This increment incl udes the oscillation circuit. Figure 2.4 Voltage Dependency in Software Standby Mode (Reference Data) Table 2.8 DC Characteristics (6) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Typ.* 3 Max. Unit Test Conditions Supply current*1 Software standby mode* Ta = 25°C I CC 0.8 3.7 µA Ta = 55°C 1.2 4.3 Ta = 85°C 3.5 18.6 Increment for IWDT operation 0.4 — Increment for LPT operation 0.4 — Use IWDT-Dedicated On-Chip Oscillator for clock source Increment for RTC operation*4 0.4 — RCR3.RTCDV[2:0] set to low drive capacity 1.2 — RCR3.RTCDV[2:0] set to normal drive capacity Note 1. Indicates the average of the typical samples through actual measurement during product evaluation. Note 2. Indicates the average of the upper-limit sample s through actual measurement during product evaluation. 0.1 100 1 . 522 . 533 . 54 ICC (µA) VCC (V) Ta = 25°C*1 Ta = 25°C*2 Ta = 55°C*1 Ta = 55°C*2 Ta = 85°C*1 Ta = 85°C*2

R01DS0342EJ0110 Rev.1.10 Page 34 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.5 Temperature Dependency in Software Standby Mode (Reference Data) Note 1. Supply current values do not include output charge/discharge current from all pins. The values appl y when internal pull-up MOSs are in the off state. Table 2.9 DC Characteristics (7) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Typ. Max. Unit Test Conditions Supply current*1 RTC operation when VCC is off T a = 25°C I CC 0.8 — µA VBATT = 2.0 V RCR3.RTCDV[2:0] set to low drive capacityTa = 55°C 0.9 — Ta = 85°C 1.0 — Ta = 25°C 0.9 — VBATT = 3.3 V RCR3.RTCDV[2:0] set to low drive capacityTa = 55°C 1.0 — Ta = 85°C 1.1 — Ta = 25°C 1.5 — VBATT = 2.0 V RCR3.RTCDV[2:0] set to normal drive capacityT a = 55°C 1.8 — Ta = 85°C 2.1 — Ta = 25°C 1.6 — VBATT = 3.3 V RCR3.RTCDV[2:0] set to normal drive capacityT a = 55°C 1.9 — Ta = 85°C 2.2 — Note 1. Average value of the tested middle samples during product evaluation. Note 2. Average value of the tested upper -limit samples during product evaluation. 0.1 100 – 4 0 – 2 00 2 04 06 08 0 1 0 0 ICC (µA) Ta (°C) *1 *2

R01DS0342EJ0110 Rev.1.10 Page 35 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.6 Temperature Dependency of RTC Operation with VCC Off (Reference Data) Note 1. Total power dissipated by the entire chip (including output currents) Table 2.10 DC Characteristics (8) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V Item Symbol Min. Typ. Max. Unit Test Conditions Permissible total power consumption*1 Pd — — 350 mW D-version product Note 1. Indicates the average of the typical samples through actual measurement during product evaluation. –40 –20 0 20 40 60 80 100 ICC (µA) Ta (°C) Normal drive capacity*1 Low drive capacity*1 Low drive capacity*1 Normal drive capacity*1

R01DS0342EJ0110 Rev.1.10 Page 36 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. The value of the D/A converter is the value of the power supply current including the reference current. Note 2. Current consumed only by the USB module. Note 3. Includes the current supplied from the pull-up resistor of the USB0_DP pin to the pull-down resistor of the host device, in addition to the current consumed by this MCU during the suspended state. Note 4. Current consumed by the power supplies (VCC and VCC_USB). Note 5. Current consumed only by the comparator B module. Note 6. Current consumed by the power supply (VCC). Note 7. When VCC = AVCC0 = VCC_USB = 3.3 V. Table 2.11 DC Characteristics (9) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ.* 7 Max. Unit Test Conditions Analog power supply current During A/D conversion (at high-speed conversion) I AVCC —0 . 7 1 . 7 m A During A/D conversion (in low-current mode) — 0.6 1.0 During D/A conversion (per channel)*1 —0 . 4 0 . 8 Waiting for A/D and D/A conversion (all units) — — 0.4 µA Reference power supply current During A/D conversion (at high-speed conversion) I REFH0 — 25 150 µA Waiting for A/D conversion (all units) — — 60 nA During D/A conversion (per channel) I REFH — 50 100 µA Waiting for D/A conversion (all units) — — 100 nA LVD1 — I LVD —0 . 1 5— µ A Temperature sensor*6 —I TEMP —7 5— µ A Comparator B operating current* Window mode ICMP*5 — 12.5 28.6 µA Comparator high-speed mode (per channel) — 3.2 16.2 µA Comparator low-speed mode (per channel) — 1.7 4.4 µA CTSU operating current  When sleep mode Base clock frequency: 2MHz Pin capacitance: 50pF ICTSU — 150 — µA USB operating current* During USB communication operation under the following settings and conditions  Host controller operation is set to full-speed mode Bulk OUT transfer (64 bytes) × 1, bulk IN transfer (64 bytes) × 1  Connect peripheral devices via a 1-meter USB cable from the USB port. IUSBH*2 —4 . 3 (VCC) 0.9 (VCC_USB) —m A During USB communication operation under the following settings and conditions  Function controller operation is set to full-speed mode Bulk OUT transfer (64 bytes) × 1, bulk IN transfer (64 bytes) × 1  Connect the host device via a 1-meter USB cable from the USB port. IUSBF*2 —3 . 6 (VCC) 1.1 (VCC_USB) —m A During suspended state under the following setting and conditions  Function controller operation is set to full-speed mode (pull up the USB0_DP pin)  Software standby mode  Connect the host device via a 1-meter USB cable from the USB port. I SUSP*3 —0 . 3 5 (VCC) 170 (VCC_USB) —µ A

R01DS0342EJ0110 Rev.1.10 Page 37 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Table 2.12 DC Characteristics (10) Conditions: VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF = 3.3 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = +25°C Item Symbol Typ. Unit Test ConditionsTransmit output power 0 dBm 4 dBm BLE operating current (when the DC-to-DC converter is selected) Idd_tx 4.3 8.7 mA Transmit mode, 2Mbps Transmit mode, 1Mbps 4.5 8.7 Transmit mode, 500kbps Transmit mode, 125kbps Idd_rx 3.0 3.5 mA Receive mode, 2Mbps Prf = –67dBm 3.0 3.4 Receive mode, 1Mbps Prf = –67dBm 3.2 3.5 Receive mode, 500kbps Prf = –72dBm 3.3 3.5 Receive mode, 125kbps Prf = –79dBm Idd_idle 0.5 mA Idle mode Idd_slp 1.5 µA Deep sleep mode Idd_down 0.1 µA Power down mode BLE operating current (when the linear regulator is selected) Idd_tx 10.2 18.1 mA Transmit mode, 2Mbps Transmit mode, 1Mbps Transmit mode, 500kbps Transmit mode, 125kbps Idd_rx 6.9 mA Receive mode, 2Mbps Prf = –67dBm

6.9 Receive mode, 1Mbps

Prf = –67dBm

6.9 Receive mode, 500kbps

Prf = –72dBm

7.1 Receive mode, 125kbps

Prf = –79dBm Idd_idle 0.7 mA Idle mode Idd_slp 1.5 µA Deep sleep mode Idd_down 0.1 µA Power down mode Table 2.13 DC Characteristics (11) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions RAM standby voltage VRAM 1.8 — — V

R01DS0342EJ0110 Rev.1.10 Page 38 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. When OFS1.(FASTSTUP, LVDAS) bits are 11b. Note 2. When OFS1.(FASTSTUP, LVDAS) bits are 01b. Note 3. When OFS1.LVDAS bit is 0. Note 4. Turn on the power supply voltage according to the normal startup rising gradient because the settings in the OFS1 register are not read in boot mode. Figure 2.7 Ripple Waveform Note: The recommended capacitance is 4.7 µF. Variations in connected capacitors should be within the above range. Table 2.14 DC Characteristics (12) Conditions: 0 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Power-on VCC rising gradient At normal startup*1 SrVCC 0.02 — 20 ms/V During fast startup time*2 0.02 — 2 Voltage monitoring 0 reset enabled at startup*3, *4 0.02 — — Table 2.15 DC Characteristics (13) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C The ripple voltage must meet the allowable ripple frequency fr (VCC) within the range between the VCC upper limit and lower limit. When VCC change exceeds VCC ±10%, the allowable voltage change rising/falling gradient dt/dVCC must be met. Item Symbol Min. Typ. Max. Unit Test Conditions Allowable ripple frequency f r (VCC) — — 10 kHz Figure 2.7 Vr (VCC) ≤ VCC × 0.2 — — 1 MHz Figure 2.7 Vr (VCC) ≤ VCC × 0.08 — — 10 MHz Figure 2.7 Vr (VCC) ≤ VCC × 0.06 Allowable voltage change rising/falling gradient dt/dVCC 1.0 — — ms/V When VCC change exceeds VCC ±10% Table 2.16 DC Characteristics (14) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Permissible error of VCL pin external capacitance C VCL 1.4 4.7 7.0 µF Vr (VCC)VCC 1 / fr (VCC)

R01DS0342EJ0110 Rev.1.10 Page 39 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note: Do not exceed the permissible total supply current. Table 2.17 Permissible Output Currents Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Max. Unit Permissible output low current (average value per pin) Ports 03, 05, 07, ports 36, 37, ports 40 to 47 IOL 4.0 mA Ports other than above Normal output mode 4.0 High-drive output mode 8.0 Permissible output low current (maximum value per pin) Ports 03, 05, 07, ports 36, 37, ports 40 to 47 4.0 Ports other than above Normal output mode 4.0 High-drive output mode 8.0 Permissible output low current Total of ports 03, 05, 07, ports 40 to 47 IOL 40 Total of ports 14 to 17, ports 21, 22, 25 to 27, ports 30, 31, 35 to 37, port PJ3 Total of ports B0, B1, B3, B5, B7, ports C0, C2 to C7 40 Total of port D3, ports E0 to E4 40 Total of all output pins 80 Permissible output high current (average value per pin) Ports 03, 05, 07, ports 36, 37, ports 40 to 47 I OH –4.0 Ports other than above Normal output mode –4.0 High-drive output mode –8.0 Permissible output high current (maximum value per pin) Ports 03, 05, 07, ports 36, 37, ports 40 to 47 –4.0 Ports other than above Normal output mode –4.0 High-drive output mode –8.0 Permissible output high current Total of ports 03, 05, 07, ports 40 to 47 IOH –40 Total of ports 14 to 17, ports 21, 22, 25 to 27, ports 30, 31, 35 to 37, port PJ3 –40 Total of ports B0, B1, B3, B5, B7, ports C0, C2 to C7 –40 Total of port D3, ports E0 to E4 –40 Total of all output pins –80

R01DS0342EJ0110 Rev.1.10 Page 40 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. This excludes the CLKOUT_RF pin. Note 1. This excludes the CLKOUT_RF pin. Table 2.18 Output Values of Voltage (1) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 2.7 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions Output low All output ports* 1 Normal output mode VOL —0 . 8 V I OL = 0.5 mA High-drive output mode — 0.8 I OL = 1.0 mA Output high All output ports* 1 Normal output mode Ports 03, 05, 07, Ports 40 to 47 V OH AVCC0 – 0.5 — V I OH = –0.5 mA Ports other than above VCC – 0.5 — High-drive output mode VCC – 0.5 — I OH = –1.0 mA Table 2.19 Output Values of Voltage (2) Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions Output low All output ports (except for RIIC) Normal output mode VOL —0 . 8 V I OL = 1.0 mA High-drive output mode — 0.8 I OL = 2.0 mA RIIC pins Standard mode (Normal output mode) —0 . 4 I OL = 3.0 mA Fast mode (High-drive output mode) —0 . 6 I OL = 6.0 mA Output high All output ports* 1 Normal output mode Ports 03, 05, 07, Ports 40 to 47 V OH AVCC0 – 0.8 — V I OH = –1.0 mA Ports other than above VCC – 0.8 — High-drive output mode VCC – 0.8 — I OH = –2.0 mA Table 2.20 Output Values of Voltage (3) Conditions: 3.0V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6V, VSS = AVSS0 = VSS_USB = VSS_RF = 0V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions Output low CLKOUT_RF VOL —0 .3 V I OL = 0.5 mA Output high CLKOUT_RF VOH VCC_RF – 0.3 — V I OH = –0.5 mA

R01DS0342EJ0110 Rev.1.10 Page 41 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics

2.2.1 Normal I/O Pin Out put Characteristics (1)

Figure 2.8 to Figure 2.11 show the characteristics when normal output is selected by the drive capacity control register. Figure 2.8 V OH/VOL and IOH/IOL Voltage Characteristics at Ta = 25°C When Normal Output is Selected (Reference Data) Figure 2.9 V OH/VOL and IOH/IOL Temperature Characteristics at VCC = 1.8 V When Normal Output is Selected (Reference Data) –30 –20 –10 IOH/IOL [mA] VOH/VOL [V] IOH/IOL vs VOH/VOL VCC = 3.6V VCC = 3.6V VCC = 3.3V VCC = 3.3V VCC = 2.7V VCC = 2.7V VCC = 1.8V VCC = 1.8V IOH/IOL [mA] VOH/VOL [V] IOH/IOL vs VOH/VOL Ta = –40°C Ta = 25°C Ta = 85°C Ta = 85°C Ta = 25°C Ta = –40°C

R01DS0342EJ0110 Rev.1.10 Page 43 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics

2.2.2 Normal I/O Pin Out put Characteristics (2)

Figure 2.12 to Figure 2.15 show the characteristics when high-drive output is selected by the drive capacity control register. Figure 2.12 V OH/VOL and IOH/IOL Voltage Characteristics at Ta = 25°C When High-Drive Output is Selected (Reference Data) Figure 2.13 V OH/VOL and IOH/IOL Temperature Characteristics at VCC = 1.8 V When High-Drive Output is Selected (Reference Data) –100 –50 100 00 . 511 . 522 . 533 . 54 IOH/IOL [mA] VOH/VOL [V] IOH/IOL vs VOH/VOL VCC = 3.6V VCC = 3.3VVCC = 2.7V VCC = 1.8V VCC = 1.8V VCC = 2.7V VCC = 3.3V VCC = 3.6V –16 –12 IOH/IOL [mA] VOH/VOL [V] IOH/IOL vs VOH/VOL Ta = –40°C Ta = 25°C Ta = 85°C Ta = 85°C Ta = 25°C Ta = –40°C

R01DS0342EJ0110 Rev.1.10 Page 45 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics

2.2.3 Normal I/O Pin Out put Characteristics (3)

Figure 2.16 to Figure 2.18 show the characteristics of the RIIC output pin. Figure 2.16 V OL and IOL Voltage Characteristics of RIIC Output Pin at Ta = 25°C (Reference Data) Figure 2.17 V OL and IOL Temperature Characteristics of RIIC Output Pin at VCC = 2.7 V (Reference Data) 00 . 511 . 522 . 533 . 5 IOL [mA] VOL [V] IOL vs VOL VCC = 3.3V VCC = 2.7V 0 0.5 1 1.5 2 2.5 3 IOL [mA] VOL [V] IOL vs VOL Ta = –40°C Ta = 85°C Ta = 25°C

R01DS0342EJ0110 Rev.1.10 Page 46 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.18 V OL and IOL Temperature Characteristics of RIIC Output Pin at VCC = 3.3 V (Reference Data) 00 . 511 . 522 . 533 . 5 IOL [mA] VOL [V] IOL vs VOL Ta = 25°C Ta = 25°C Ta = –40°C

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2.3 AC Characteristics

2.3.1 Clock Timing

Note 1. The lower-limit frequency of FCLK is 1 MHz during programmi ng or erasing of the flash memory. When FCLK is in use at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 2. The frequency accuracy of FCLK must be within ±3.5%. Note 3. The VCC_USB range is 3.0 to 3.6 V when the USB clock is in use. Note 4. The maximum operating frequency listed above does not include er rors of the external oscillator and internal oscillator. For details on the range for the guaranteed operation, see Table 2.24, Clock Timing. Note 1. The lower-limit frequency of FCLK is 1 MHz during programmi ng or erasing of the flash memory. When using FCLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 2. The frequency accuracy of FCLK must be within ±3.5%. Note 3. The VCC_USB range is 3.0 to 3.6 V when the USB clock is in use. Note 4. The maximum operating frequency listed above does not include er rors of the external oscillator and internal oscillator. For details on the range for the guaranteed operation, see Table 2.24, Clock Timing. Table 2.21 Operating Frequency Value (High-Speed Operating Mode) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol VCC Unit1.8 V ≤ VCC < 2.4 V

2.4 V ≤ VCC

< 2.7 V

2.7 V ≤ VCC

≤ 3.6 V When USB is in Use*3 Maximum operating frequency* System clock (ICLK) fmax 81 6 5 4 5 4 M Hz FlashIF clock (FCLK)*1, *2 81 6 3 2 3 2 Peripheral module clock (PCLKA) 8 16 54 54 Peripheral module clock (PCLKB) 8 16 32 32 Peripheral module clock (PCLKD) 8 32 54 54 USB clock (UCLK) fusb ———4 8 Table 2.22 Operating Frequency Value (Middle-Speed Operating Mode) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol VCC Unit1.8 V ≤ VCC < 2.4 V < 2.7 V ≤ 3.6 V When USB is in Use*3 Maximum operating frequency*4 System clock (ICLK) fmax 81 2 1 2 1 2 M Hz FlashIF clock (FCLK)*1, *2 81 2 1 2 1 2 Peripheral module clock (PCLKA) 8 12 12 12 Peripheral module clock (PCLKB) 8 12 12 12 Peripheral module clock (PCLKD) 8 12 12 12 USB clock (UCLK) fusb ———4 8

R01DS0342EJ0110 Rev.1.10 Page 48 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. Programming and erasing t he flash memory is impossible. Note 2. The A/D converter cannot be used. Note 3. The maximum operating frequency list ed above does not include errors of the external oscillator. For details on the range for the guaranteed operation, see Table 2.24, Clock Timing. Table 2.23 Operating Frequency Value (Low-Speed Operating Mode) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol VCC Unit1.8 V ≤ VCC < 2.4 V

2.4 V ≤ VCC <

2.7 V

2.7 V ≤ VCC ≤

3.6 V Maximum operating frequency*3 System clock (ICLK) fmax 32.768 kHz FlashIF clock (FCLK)*1 32.768 Peripheral module clock (PCLKA) 32.768 Peripheral module clock (PCLKB) 32.768 Peripheral module clock (PCLKD)*2 32.768

R01DS0342EJ0110 Rev.1.10 Page 49 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. Time until the clock can be used after the main clock oscillator stop bit (MOSCCR.MOSTP) is set to 0 (operating). Note 2. Reference values when an 8-MHz resonator is used. When specifying the main clock oscillator stabilization time, set the MOSCWTCR register with a stabilization time value that is equal to or greater than the resonator-manufacturer-recommended value. After the MOSCCR.MOSTP bit is changed to enable the main clock oscillator, confirm that the OSCOVFSR.MOOVF flag has become 1, and then start using the main clock. Note 3. The VCC range should be 2.4 to 3.6 V when the PLL is used. Note 4. Reference values when a 32.768-kHz resonator is used. After the setting of the SOSCCR.SOSTP bit or RCR3.RTCEN bit is changed to operate the sub-clock oscillator, only start using the sub-clock after the sub-clock oscillation stabilization wait time that is equal to or greater than the oscillator-manufacturer- recommended value has elapsed. Note 5. The VCC range should be 3.0 to 3.6 V when the USBPLL is used. Note 6. The oscillation frequency can be set to 48 MHz only. Note 7. Only 32.768 kHz can be used. Table 2.24 Clock Timing Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0= VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions EXTAL external clock input cycle time tXcyc 50 — — ns Figure 2.19 EXTAL external clock input high pulse width t XH 20 — — ns EXTAL external clock input low pulse width t XL 20 — — ns EXTAL external clock rise time tXr —— 5 n s EXTAL external clock fall time t Xf —— 5 n s EXTAL external clock input wait time*1 tXWT 0.5 — — µs Main clock oscillator oscillation frequency 2.4 ≤ VCC ≤ 3.6 f MAIN 1— 2 0 M H z 1.8 ≤ VCC < 2.4 1 — 8 Main clock oscillation stabilization time (crystal)*2 tMAINOSC — 3 — ms Figure 2.20 Main clock oscillation stabilization time (ceramic resonator)*2 tMAINOSC —5 0—µ s LOCO clock oscillation frequency f LOCO 3.44 4.0 4.56 MHz LOCO clock oscillation stabilization time t LOCO — — 0.5 µs Figure 2.21 IWDT-dedicated clock oscillation frequency fILOCO 12.75 15 17.25 kHz IWDT-dedicated clock oscillation stabilization time t ILOCO — — 50 µs Figure 2.22 Bluetooth-dedicated clock oscillation frequency f BLECK —3 2— M H z Bluetooth-dedicated low-speed on-chip oscillator oscillation frequency fBLELOCO — 32.768 — kHz HOCO clock oscillation frequency f HOCO (32 MHz) 31.36 32 32.64 MHz T a = 0 to +85°C 31.04 32 32.96 T a = –40 to +85°C fHOCO (54 MHz) 52.96 54 55.08 MHz T a = 0 to +85°C 52.38 54 55.62 Ta = –40 to +85°C HOCO clock oscillation stabilization time t HOCO — — 30 µs Figure 2.24 PLL input frequency*3 fPLLIN 4 — 12.5 MHz PLL circuit oscillation frequency*3 fPLL 24 — 54 MHz PLL clock oscillation stabilization time t PLL — — 50 µs Figure 2.25 PLL free-running oscillation frequency f PLLFR —8— M H z USBPLL input frequency*5 fPLLIN — 4, 6, 8, 12 — MHz USBPLL circuit oscillation frequency*5 fPLL — 48* 6 —M H z USBPLL clock oscillation stabilization time t PLL — — 50 µs Figure 2.25 Sub-clock oscillator oscillation frequency*7 fSUB — 32.768 — kHz Sub-clock oscillation stabilization time*4 tSUBOSC — 0.5 — s Figure 2.26

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2.3.2 Reset Timing

Note 1. When OFS1.(LVDAS, FASTSTUP) bits are 11b. Note 2. When OFS1.(LVDAS, FASTSTUP) bits are a value other than 11b. Note 3. When IWDTCR.CKS[3:0] bits are 0000b. Note 4. When WDTCR.CKS[3:0] bits are 0001b. Figure 2.27 Reset Input Timing at Power-On Figure 2.28 Reset Input Timing (1) Table 2.25 Reset Timing Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions RES# pulse width At power-on tRESWP 3 — — ms Figure 2.27 Other than above tRESW 30 — — µs Figure 2.28 Wait time after RES# cancellation (at power-on) At normal startup*1 tRESWT — 8.5 — ms Figure 2.27 During fast startup time*2 tRESWT — 560 — µs Wait time after RES# cancellation (during powered-on state) tRESWT — 120 — µs Figure 2.28 Independent watchdog timer reset period t RESWIW — 1 — IWDT clock cycle Figure 2.29 Watchdog timer reset period t RESWWW — 4 — PCLKB cycle Software reset period tRESWSW — 1 — ICLK cycle Wait time after independent watchdog timer reset cancellation*3 tRESWT2 — 300 — µs Wait time after watchdog timer reset cancellation*4 tRESWT2 — 300 — µs Wait time after software reset cancellation tRESWT2 — 170 — µs VCC RES# tRESWP Internal reset tRESWT RES# Internal reset tRESWT tRESW

R01DS0342EJ0110 Rev.1.10 Page 53 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.29 Reset Input Timing (2) Independent watchdog timer reset Watchdog timer reset Software reset Internal reset tRESWT2 tRESWIW, tRESWWW, tRESWSW

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2.3.3 Timing of Recovery from Low Power Consumption Modes

Note 1. The recovery time varies depending on the state of each osci llator when the WAIT instruction is executed. When multiple oscillators are operating, the recovery time varies depending on the operating state of the oscillators that are not selected as the system clock source. The above table applies when only the corresponding clock is operating. Note 2. When the frequency of the crystal is 20 MHz. When the main clock oscillator wait control register (MOSCWTCR) is set to 04h. Note 3. When the frequency of the external clock is 20 MHz. When the main clock oscillator wait control register (MOSCWTCR) is set to 00h. Note 1. The recovery time varies depending on the state of each osci llator when the WAIT instruction is executed. When multiple oscillators are operating, the recovery time varies depending on the operating state of the oscillators that are not selected as the system clock source. The above table applies when only the corresponding clock is operating. Note 2. When the frequency of the crystal is 12 MHz. When the main clock oscillator wait control register (MOSCWTCR) is set to 04h. Note 3. When the frequency of PLL is 12 MHz. When the main clock oscillator wait control register (MOSCWTCR) is set to 04h. Note 4. When the frequency of the external clock is 12 MHz. When the main clock oscillator wait control register (MOSCWTCR) is set to 00h. Note 5. When the frequency of PLL is 12 MHz. When the main clock oscillator wait control register (MOSCWTCR) is set to 00h. Note 6. This is the case when HOCO is selected as the system clock and its frequency division is set to be 8 MHz. Table 2.26 Timing of Recovery from Low Power Consumption Modes (1) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Recovery time from software standby mode*1 High-speed mode Crystal connected to main clock oscillator Main clock oscillator operating* tSBYMC — 2 3 ms Figure 2.30 External clock input to main clock oscillator Main clock oscillator operating* tSBYEX —3 55 0µ s Sub-clock oscillator operating t SBYSC — 650 800 µs HOCO clock oscillator operating t SBYHO —4 05 5µ s LOCO clock oscillator operating t SBYLO —4 05 5µ s Table 2.27 Timing of Recovery from Low Power Consumption Modes (2) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Recovery time from software standby mode*1 Middle-speed mode Crystal connected to main clock oscillator Main clock oscillator operating* tSBYMC — 2 3 ms Figure 2.30 Main clock oscillator and PLL circuit operating* tSBYPC —2 3 m s External clock input to main clock oscillator Main clock oscillator operating* tSBYEX —3 4µ s Main clock oscillator and PLL circuit operating* tSBYPE —6 58 5µ s Sub-clock oscillator operating t SBYSC — 600 750 µs HOCO clock oscillator operating*6 tSBYHO —4 05 0µ s LOCO clock oscillator operating t SBYLO —5 7µ s

R01DS0342EJ0110 Rev.1.10 Page 55 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note 1. The sub-clock conti nues oscillating in software standby mode during low-speed mode. Figure 2.30 Software Standby Mode Recovery Timing Note 1. Oscillators continue oscillating in deep sleep mode. Note 2. When the frequency of the system clock is 32 MHz. Note 3. When the frequency of the system clock is 12 MHz. Note 4. When the frequency of the system clock is 32 kHz. Table 2.28 Timing of Recovery from Low Power Consumption Modes (3) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Recovery time from software standby mode* Low-speed mode Sub-clock oscillator operating t SBYSC — 600 750 µs Figure 2.30 Table 2.29 Timing of Recovery from Low Power Consumption Modes (4) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Recovery time from deep sleep mode*1 High-speed mode*2 tDSLP — 2 3.5 µs Figure 2.31 Middle-speed mode*3 tDSLP —3 4µ s Low-speed mode*4 tDSLP — 400 500 µs Oscillator ICLK IRQ Software standby mode tSBYMC, tSBYPC, tSBYEX, tSBYPE, tSBYSC, tSBYHO, tSBYLO

R01DS0342EJ0110 Rev.1.10 Page 56 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.31 Deep Sleep Mode Recovery Timing Note: Values when the frequencies of PCLKA, PCLKB, PCLKD, and FCLK, are not divided. Table 2.30 Operating Mode Transition Time Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Mode before Transition Mode after Transition ICLK Frequency Transition Time Unit Min. Typ. Max. High-speed operating mode Middle-speed operating modes 8 MHz — 10 — µs Middle-speed operating modes High-speed operating mode 8 MHz — 37.5 — µs Low-speed operating mode Middle-speed operating mode, high-speed operating mode 32.768 kHz — 215 — µs Middle-speed operating mode, high-speed operating mode Low-speed operating mode 32.768 kHz — 185 — µs Oscillator ICLK IRQ Deep sleep mode tDSLP

R01DS0342EJ0110 Rev.1.10 Page 57 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics

2.3.4 Control Signal Timing

Note: 200 ns minimum in software standby mode. Note 1. t Pcyc indicates the cycle of PCLKB. Note 2. t NMICK indicates the cycle of the NMI digital filter sampling clock. Note 3. t IRQCK indicates the cycle of the IRQi digital filter sampling clock (i = 0 to 7). Figure 2.32 NMI Interrupt Input Timing Figure 2.33 IRQ Interrupt Input Timing Table 2.31 Control Signal Timing Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions NMI pulse width t NMIW 200 — — ns NMI digital filter is disabled (NMIFLTE.NFLTEN = 0) tPcyc × 2 ≤ 200 ns tPcyc × 2*1 —— tPcyc × 2 > 200 ns 200 — — NMI digital filter is enabled (NMIFLTE.NFLTEN = 1) tNMICK × 3 ≤ 200 ns tNMICK × 3.5*2 —— tNMICK × 3 > 200 ns IRQ pulse width t IRQW 200 — — ns IRQ digital filter is disabled (IRQFLTE0.FLTENi = 0) tPcyc × 2 ≤ 200 ns tPcyc × 2*1 —— tPcyc × 2 > 200 ns 200 — — IRQ digital filter is enabled (IRQFLTE0.FLTENi = 1) tIRQCK × 3 ≤ 200 ns tIRQCK × 3.5*3 —— tIRQCK × 3 > 200 ns NMI tNMIW IRQ tIRQW

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2.3.5 Timing of On-Chi p Peripheral Modules

2.3.5.1 Timing of I/O Ports

Note 1. t Pcyc: PCLK cycle Figure 2.34 I/O Port Input Timing Table 2.32 Timing of I/O Ports Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions I/O ports Input data pulse width t PRW 1.5 — t Pcyc Figure 2.34 Port PCLK tPRW

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2.3.5.2 Timing of MTU/TPU

Note 1. t Pcyc: PCLK cycle Figure 2.35 MTU Input/Output Timing Figure 2.36 MTU Clock Input Timing Table 2.33 Timing of MTU/TPU Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions MTU/TPU Input capture input pulse width Single-edge setting t TICW 1.5 — t Pcyc Figure 2.35 Both-edge setting 2.5 — Timer clock pulse width Single-edge setting t TCKWH, tTCKWL 1.5 — t Pcyc Figure 2.36 Both-edge setting 2.5 — Phase counting mode 2.5 — Output compare output Input capture input PCLK tTICW MTCLKA to MTCLKD PCLK tTCKWL tTCKWH

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2.3.5.3 Timing of POE

Note 1. t Pcyc: PCLK cycle Figure 2.37 POE# Input Timing

2.3.5.4 Timing of TMR

Note 1. t Pcyc: PCLK cycle Figure 2.38 TMR Clock Input Timing Table 2.34 Timing of POE Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions POE POE# input pulse width t POEW 1.5 — t Pcyc Figure 2.37 Table 2.35 Timing of TMR Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions TMR Timer clock pulse width Single-edge setting t TMCWH, tTMCWL 1.5 — t Pcyc Figure 2.38 Both-edge setting 2.5 — POEn# input PCLK tPOEW PCLK TMCI0 to TMCI3 tTMCWL tTMCWH

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2.3.5.5 Timing of SCI

Note 1. t Pcyc: PCLK cycle Figure 2.39 SCK Clock Input Timing Table 2.36 Timing of SCI Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions SCI Input clock cycle time Asynchronous t Scyc 4— t Pcyc Figure 2.39 Clock synchronous 6 — Input clock pulse width t SCKW 0.4 0.6 t Scyc Input clock rise time tSCKr —2 0 n s Input clock fall time t SCKf —2 0 n s Output clock cycle time Asynchronous t Scyc 16 — t Pcyc Figure 2.40 Clock synchronous 4 — Output clock pulse width t SCKW 0.4 0.6 t Scyc Output clock rise time tSCKr —2 0 n s Output clock fall time t SCKf —2 0 n s Transmit data delay time (master) Clock synchronous t TXD —4 0 n s Transmit data delay time (slave) Clock synchronous

2.7 V or above — 65 ns

1.8 V or above — 100 ns

(master) Clock synchronous

2.7 V or above t

RXS 65 — ns

1.8 V or above 90 — ns

(slave) Clock synchronous 40 — ns Receive data hold time Clock synchronous t RXH 40 — ns tSCKW tSCKr tSCKf tScyc SCKn n = 1, 5, 8, 12

R01DS0342EJ0110 Rev.1.10 Page 62 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.40 SCI Input/Output Timing: Clock Synchronous Mode Note: t Pcyc: PCLK cycle Note 1. C b is the total capacitance of the bus lines. Table 2.37 Timing of Simple I 2C Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, fPCLKB ≤ 32 MHz, Ta = –40 to +85°C Item Symbol Min.* 1 Max. Unit Test Conditions Simple I2C (Standard mode) SSDA rise time t Sr — 1000 ns Figure 2.41 SSDA fall time tSf — 300 ns SSDA spike pulse removal time tSP 04 × t Pcyc ns Data setup time t SDAS 250 — ns Data hold time tSDAH 0— n s SSCL, SSDA capacitive load Cb — 400 pF Simple I2C (Fast mode) SSDA rise time t Sr — 300 ns Figure 2.41 SSDA fall time tSf — 300 ns SSDA spike pulse removal time tSP 04 × t Pcyc ns Data setup time t SDAS 100 — ns Data hold time tSDAH 0— n s SSCL, SSDA capacitive load Cb — 400 pF tTXD tRXS tRXH TXDn RXDn SCKn n = 1, 5, 8, 12

R01DS0342EJ0110 Rev.1.10 Page 63 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.41 RIIC Bus Interface Input/Output Timing and Simple I 2C Bus Interface Input/Output Timing Note 1. t Pcyc: PCLK cycle Table 2.38 Timing of Simple SPI Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit* 1 Test Conditions Simple SPI SCK clock cycle output (master) tSPcyc 4 65536 t Pcyc Figure 2.42 SCK clock cycle input (slave) 6 65536 t Pcyc SCK clock high pulse width tSPCKWH 0.4 0.6 t SPcyc SCK clock low pulse width tSPCKWL 0.4 0.6 t SPcyc SCK clock rise/fall time tSPCKr, tSPCKf —2 0n s Data input setup time (master) 2.7 V or above tSU 65 — ns Figure 2.43, Figure 2.441.8 V or above 95 — Data input setup time (slave) 40 — Data input hold time tH 40 — ns SSL input setup time tLEAD 3— t SPcyc SSL input hold time tLAG 3— t SPcyc Data output delay time (master) tOD —4 0n s Data output delay time (slave) 2.7 V or above — 65

1.8 V or above — 100

Data output hold time (master) 2.7 V or above tOH –10 — ns

1.8 V or above –20 —

Data output hold time (slave) –10 — Data rise/fall time tDr, tDf —2 0n s SSL input rise/fall time t SSLr, tSSLf —2 0n s Slave access time tSA —6 t Pcyc Figure 2.45, Figure 2.46Slave output release time t REL —6 t Pcyc Test conditions VIH = VCC × 0.7, VIL = VCC × 0.3 SDA SCL VIH VIL tSTAH tSCLH tSCLL P*1 S*1 tSf tSr tSCL tSDAH tSDAS tSTAS tSP tSTOS P*1 tBUF Sr*1 Note 1. S, P, and Sr indicate the following conditions, respectively. S: START condition P: STOP condition Sr: Repeated START condition

R01DS0342EJ0110 Rev.1.10 Page 66 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.46 RSPI Timing (Sl ave, CPHA = 1) and Simple SPI Clock Timing (Slave, CKPH = 0) tDr, tDf tSA tOH tLEAD tTD tLAG tH LSB OUT (Last data) DATA MSB OUT MSB IN DATA LSB IN MSB IN LSB OUT tSU tOD tREL MSB OUT SCKn CKPOL = 1 input SCKn CKPOL = 0 input SMISOn output SMOSIn input Simple SPIRSPI SSLA0 input RSPCKA CPOL = 0 input RSPCKA CPOL = 1 input MISOA output MOSIA input SSn# input n = 1, 5, 8, 12

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2.3.5.6 Timing of RIIC

Note: t IICcyc: RIIC internal reference clock (IICφ) cycle Note 1. The value in parentheses is used when the ICMR3.NF[1:0] bi ts are set to 11b while a digital filter is enabled with the ICFER.NFE bit = 1. Note 2. C b is the total capacitance of the bus lines. Table 2.39 Timing of RIIC Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, fPCLKB ≤ 32 MHz, Ta = –40 to +85°C Item Symbol Min.* 1, *2 Max. Unit Test Conditions RIIC (Standard mode, SMBus) SCL cycle time t SCL 6 (12) × tIICcyc + 1300 — ns Figure 2.47 SCL high pulse width t SCLH 3 (6) × tIICcyc + 300 — ns SCL low pulse width t SCLL 3 (6) × tIICcyc + 300 — ns SCL, SDA rise time tSr — 1000 ns SCL, SDA fall time tSf — 300 ns SCL, SDA spike pulse removal time t SP 01 (4) × tIICcyc ns SDA bus free time t BUF 3 (6) × tIICcyc + 300 — ns START condition hold time t STAH tIICcyc + 300 — ns Repeated START condition setup time t STAS 1000 — ns STOP condition setup time tSTOS 1000 — ns Data setup time tSDAS tIICcyc + 50 — ns Data hold time tSDAH 0— n s SCL, SDA capacitive load Cb — 400 pF RIIC (Fast mode) SCL cycle time t SCL 6 (12) × tIICcyc + 600 — ns Figure 2.47 SCL high pulse width t SCLH 3 (6) × tIICcyc + 300 — ns SCL low pulse width t SCLL 3 (6) × tIICcyc + 300 — ns SCL, SDA rise time t Sr — 300 ns SCL, SDA fall time tSf — 300 ns SCL, SDA spike pulse removal time t SP 01 (4) × tIICcyc ns SDA bus free time t BUF 3 (6) × tIICcyc + 300 — ns START condition hold time tSTAH tIICcyc + 300 — ns Repeated START condition setup time t STAS 300 — ns STOP condition setup time tSTOS 300 — ns Data setup time tSDAS tIICcyc + 50 — ns Data hold time tSDAH 0— n s SCL, SDA capacitive load Cb — 400 pF

R01DS0342EJ0110 Rev.1.10 Page 68 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.47 RIIC Bus Interface Input/Output Timing and Simple I 2C Bus Interface Input/Output Timing Test conditions VIH = VCC × 0.7, VIL = VCC × 0.3 SDA SCL VIH VIL tSTAH tSCLH tSCLL P*1 S*1 tSf tSr tSCL tSDAH tSDAS tSTAS tSP tSTOS P*1 tBUF Sr*1 Note 1. S, P, and Sr indicate the following conditions, respectively. S: START condition P: STOP condition Sr: Repeated START condition

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2.3.5.7 Timing of RSPI

Table 2.40 Timing of RSPI Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C, C = 30 pF, when high-drive output is selected by the drive capacity control register Item Symbol Min. Max. Unit Test Conditions RSPI RSPCK clock cycle Master tSPcyc 2 4096 t Pcyc*1 Figure 2.48 Slave 8 4096 RSPCK clock high pulse width Master t SPCKWH (tSPcyc – tSPCKr – tSPCKf)/2 – 3 —n s Slave (t SPcyc – tSPCKr – tSPCKf)/2 RSPCK clock low pulse width Master t SPCKWL (tSPcyc – tSPCKr – tSPCKf)/2 – 3 —n s Slave (t SPcyc – tSPCKr – tSPCKf)/2 RSPCK clock rise/fall time Output 2.7 V or above t SPCKr, tSPCKf —1 0 n s

1.8 V or above — 15

Input — 1 µs Data input setup time Master 2.7 V or above t SU 10 — ns Figure 2.49 to Figure 2.521.8 V or above 30 — Slave 25 – tPcyc — Data input hold time Master RSPCK set to a division ratio other than PCLKB divided by 2 tH tPcyc —n s RSPCK set to PCLKB divided by 2 tHF 0— Slave t H 20 + 2 × tPcyc — SSL setup time Master t LEAD –30 + N*2 × tSPcyc —n s Slave 2 — t Pcyc SSL hold time Master tLAG –30 + N*3 × tSPcyc —n s Slave 2 — t Pcyc Data output delay time Master 2.7 V or above t OD —1 4 n s

1.8 V or above — 30

Slave 2.7 V or above — 3 × t Pcyc + 65

1.8 V or above — 3 × t Pcyc +105

OH 0— n s Slave 0 — Successive transmission delay time Master t TD tSPcyc + 2 × tPcyc 8 × tSPcyc + 2 × tPcyc ns Slave 4 × t Pcyc — MOSI and MISO rise/fall time Output 2.7 V or above t Dr, tDf —1 0 n s Input — 1 µs SSL rise/fall time Output 2.7 V or above t SSLr, tSSLf —1 0 n s

1.8 V or above — 15 ns

Input — 1 µs Slave access time 2.7 V or above tSA —6 t Pcyc Figure 2.51, Figure 2.521.8 V or above — 7 Slave output release time REL —5 t Pcyc

1.8 V or above — 6

R01DS0342EJ0110 Rev.1.10 Page 72 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.52 RSPI Timing (Sl ave, CPHA = 1) and Simple SPI Clock Timing (Slave, CKPH = 0) tDr, tDf tSA tOH tLEAD tTD tLAG tH LSB OUT (Last data) DATA MSB OUT MSB IN DATA LSB IN MSB IN LSB OUT tSU tOD tREL MSB OUT SCKn CKPOL = 1 input SCKn CKPOL = 0 input SMISOn output SMOSIn input Simple SPIRSPI SSLA0 input RSPCKA CPOL = 0 input RSPCKA CPOL = 1 input MISOA output MOSIA input SSn# input n = 1, 5, 8, 12

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2.3.5.8 Timing of SSI

Figure 2.53 SSI Clock Input/Output Timing Figure 2.54 SSI Transmission/Re ception Timing (SSICR.SCKP = 0) Table 2.41 Timing of SSI Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, fPCLKB ≤ 32 MHz, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions SSI AUDIO_MCLK input frequency

2.7 V or above t AUDIO 12 5 M Hz

1.8 V or above 1 4

Output clock cycle tO 250 — ns Figure 2.53 Input clock cycle tI 250 — ns Clock high level tHC 0.4 0.6 to, ti Clock low level tLC 0.4 0.6 to, ti Clock rise time tRC —2 0 n s Data delay time 2.7 V or above t DTR — 65 ns Figure 2.54 Figure 2.551.8 V or above — 105 Setup time 2.7 V or above t SR 65 — ns

1.8 V or above 90 —

Hold time tHTR 40 — ns WS changing edge SSIDATA output delay t DTRW — 105 ns Figure 2.56 SSISCKn tHC tLC tRC tI, tO tSR tHTR tDTR SSISCKn (input or output ) SSIWSn, SSIDATAn , SSIRXDn (input ) SSIWSn, SSIDATAn , SSITXDn (output )

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2.3.5.9 Timing of SDHI

Figure 2.57 SD Host Interface Input/Output Signal Timing Table 2.42 Timing of SDHI Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, fPCLKB ≤ 32 MHz, Ta = –40 to +85°C, when high-drive output is selected by the drive capacity control register Item Symbol Min. Max. Unit Test Conditions SDHI SDHI_CLK pin output cycle time tPP(SD) 62.5 — ns Figure 2.57 SDHI_CLK pin output high pulse width tWH(SD) 18.25 — ns SDHI_CLK pin output low pulse width tWL(SD) 18.25 — ns SDHI_CLK pin output rise time tTLH(SD) —1 0 n s SDHI_CLK pin output fall time tTHL(SD) —1 0 n s Output data delay time (data transfer mode) for SDHI_CMD and SDHI_D0 to SDHI_D3 pins tODLY(SD) –18.25 18.25 ns Input data setup time for SDHI_CMD and SDHI_D0 to SDHI_D3 pins t ISU(SD) 9.25 — ns Input data hold time for SDHI_CMD and SDHI_D0 to SDHI_D3 pins t IH(SD) 8.3 — ns SDHI_CLK output SDHI_CMD, SDHI_D3 to SDHI_D0 input SDHI_CMD, SDHI_D3 to SDHI_D0 output tWL(SD) tWH(SD) tPP(SD) tISU(SD) tIH(SD) tTLH(SD)tTHL(SD) tODLY(SD) tODLY(SD) VIH VIL VIL VIL VIH VIH 50% VCC 50% VCC

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2.3.5.10 Timing of A/ D Converter Trigger

Note 1. t Pcyc: PCLK cycle Figure 2.58 A/D Converter External Trigger Input Timing

2.3.5.11 Timing of CAC

Note 1. t Pcyc: PCLK cycle Note 2. t cac: CAC count clock source cycle Table 2.43 Timing of A/D Converter Trigger Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions A/D converter Trigger input pulse width t TRGW 1.5 — t Pcyc Figure 2.58 Table 2.44 Timing of CAC Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions CAC CACREF input pulse width t Pcyc ≤ tcac*2 tCACREF 4.5 tcac + 3 tPcyc —n s tPcyc > tcac*2 5 tcac + 6.5 tPcyc ADTRG0# PCLK tTRGW

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2.3.5.12 Timing of CLKOUT

Note 1. t Pcyc: PCLK cycle Note 2. When the LOCO is selected as the clock output source (the CKOCR.CKOSEL[2:0] bits are 000b), set the clock output divisio n ratio selection to divided by 2 (the CKOCR.CKODIV[2:0] bits are 001b). Note 3. When the EXTAL external clock input or an oscillator is used with divided by 1 (the CKOCR.CKOSEL[2:0] bits are 010b and the CKOCR.CKODIV[2:0] bits are 000b) to output from CLKOUT, the above should be satisfied with an input duty cycle of 45 to 55%. Figure 2.59 CLKOUT Output Timing Table 2.45 Timing of CLKOUT Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions CLKOUT CLKOUT pin output cycle *3 VCC = 2.7 V or above t Ccyc 62.5 — ns Figure 2.59 VCC = 1.8 V or above 125 CLKOUT pin high pulse width*2 VCC = 2.7 V or above t CH 15 — ns VCC = 1.8 V or above 30 CLKOUT pin low pulse width*2 VCC = 2.7 V or above t CL 15 — ns VCC = 1.8 V or above 30 CLKOUT pin output rise time VCC = 2.7 V or above t Cr —1 2 n s VCC = 1.8 V or above 25 CLKOUT pin output fall time VCC = 2.7 V or above t Cf —1 2 n s VCC = 1.8 V or above 25 tCf tCH tCcyc tCr tCL CLKOUT pin output Test conditions: VOH = VCC × 0.7, VOL = VCC × 0.3, IOH = -1.0 mA, IOL = 1.0 mA, C = 30 pF

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2.3.5.13 Timing of CLKOUT_RF

Note 1. t Pcyc: PCLK cycle Note 2. The voltage for VCC_RF when CLKOUT_RF pin is to be used is between 3.0 V and 3.6 V. Figure 2.60 CLKOUT_RF Output Timing Table 2.46 Timing of CLKOUT_RF Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions CLKOUT_RF CLKOUT_RF pin output cycle tCRFcyc 250 — ns Figure 2.60 CLKOUT_RF pin high pulse width t CRFH 100 — ns CLKOUT_RF pin low pulse width tCRFL 100 — ns CLKOUT_RF pin output rise time tCRFr —5 ns CLKOUT_RF pin output fall time tCRFf —5 ns tCRFf tCRFH tCRFcyc tCRFr tCRFL CLKOUT_RF pin output Test conditions: VOH = VCC_RF × 0.8 , VOL = VCC_RF × 0.2 Note. The voltage for VCC_RF pin when CLKOUT_RF is to be used is between 3.0 V and 3.6 V. vOH vOL

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2.4 USB Characteristics

Figure 2.61 USB0_DP and USB0_DM Output Timing Table 2.47 USB Characteristics (USB0_D P and USB0_DM Pin Characteristics) Conditions: 3.0 V ≤ VCC = VCC_USB = AVCC = VCC_RF = AVCC_RF < 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Max. Unit Test Conditions Input characteristics Input high level voltage VIH 2.0 — V Input low level voltage VIL —0 .8 V Differential input sensitivity V DI 0.2 — V | USB0_DP – USB0_DM | Differential common mode range V CM 0.8 2.5 V Output characteristics Output high level voltage V OH 2.8 VCC_USB V I OH = –200 µA Output low level voltage V OL 0.0 0.3 V I OL = 2 mA Cross-over voltage VCRS 1.3 2.0 V Figure 2.61, Figure 2.62Rise time FS t r 42 0 n s LS 75 300 Fall time FS t f 42 0 n s LS 75 300 Rise/fall time ratio FS t r/tf 90 111.11 % t r/tf LS 80 125 Output resistance ZDRV 28 44 Ω (Adjusting the resistance by external elements is not necessary.) VBUS characteristics VBUS input voltage V IH VCC × 0.8 — V VIL —V CC × 0.2 V Pull-up, pull-down Pull-down resistor RPD 14.25 24.80 k Ω Pull-up resistor RPUI 0.9 1.575 k Ω During idle state RPUA 1.425 3.09 k Ω During reception Battery Charging Specification Ver 1.2 D+ sink current I DP_SINK 25 175 µA D- sink current IDM_SINK 25 175 µA DCD source current IDP_SRC 71 3 µ A Data detection voltage V DAT_REF 0.25 0.4 V D+ source current VDP_SRC 0.5 0.7 V Output current = 250 µA D- source current VDM_SRC 0.5 0.7 V Output current = 250 µA USB0_DP, USB0_DM tftr 90% 10%10% 90%VCRS

R01DS0342EJ0110 Rev.1.10 Page 80 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.62 Test Circuit Observation point 50 pF 50 pF USB0_DP USB0_DM Full-speed (FS) Observation point 1.5 k 200 pF to 600 pF USB0_DP USB0_DM 200 pF to 600 pF 3.6 V Observation pointLow-speed (LS)

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2.5 A/D Conversion Characteristics

Figure 2.63 VREFH0 Voltage Range vs. AVCC0 Note: The characteristics apply when no pin functions other than A/D converter input are used. Absolute accuracy includes quantization errors. Offset error, full-scale error, DNL differential non-linearity error, and INL integral non-linearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time a nd the comparison time. As the test conditions, the number of sampling states is indicated. Table 2.48 A/D Conversion Characteristics (1) Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0, reference voltage = VREFH0 selected, VSS = AVSS0 = VREFL0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Min. Typ. Max. Unit Test Conditions Frequency 1 — 54 MHz Resolution — — 12 Bit Conversion time*1 (Operation at PCLKD = 54 MHz) Permissible signal source impedance (Max.) = 0.3 kΩ 0.83 — — µs High-precision channel The ADCSR.ADHSC bit is 0 The ADSSTRn register is 0Dh 1.33 — — Normal-precision channel The ADCSR.ADHSC bit is 0 The ADSSTRn register is 28h Analog input capacitance Cs — — 15 pF Pin capacitance included Figure 2.64 Analog input resistance Rs — — 2.5 k Ω Figure 2.64 Analog input voltage range Ain 0 — VREFH0 V Offset error — ±0.5 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Full-scale error — ±0.75 ±4.5 LSB High-precision channel ±6.0 LSB Other than above Quantization error — ±0.5 — LSB Absolute accuracy — ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential non-linearity error — ±1.0 — LSB INL integral non-linearity error — ±1.0 ±3.0 LSB VREFH0 3.0 2.0 1.0 1.0 2.0 3.0 A/D Conversion Characteristics (1) A/D Conversion Characteristics (2) ADCSR.ADHSC=0 3.6 2.7 2.4 2.4 2.7 3.6 AVCC0 VREFH0 3.0 2.0 1.0 1.0 2.0 3.0 A/D Conversion Characteristics (3) A/D Conversion Characteristics (4) ADCSR.ADHSC=1 3.6 2.7 2.4 2.4 2.7 3.6 AVCC0 A/D Conversion Characteristics (5) 1.8 1.8

R01DS0342EJ0110 Rev.1.10 Page 82 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than A/D converter input are used. Absolute accuracy includes quantization errors. Offset error, full-scale error, DNL differential non-linearity error, and INL integral non-linearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time a nd the comparison time. As the test conditions, the number of sampling states is indicated. Table 2.49 A/D Conversion Characteristics (2) Conditions: 2.4 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, 2.4 V ≤ VREFH0 ≤ AVCC0, reference voltage = VREFH0 selected, VSS = AVSS0 = VREFL0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Min. Typ. Max. Unit Test Conditions Frequency 1 — 32 MHz Resolution — — 12 Bit Conversion time*1 (Operation at PCLKD = 32 MHz) Permissible signal source impedance (Max.) = 1.3 kΩ 1.41 — — µs High-precision channel The ADCSR.ADHSC bit is 0 The ADSSTRn register is 0Dh 2.25 — — Normal-precision channel The ADCSR.ADHSC bit is 0 The ADSSTRn register is 28h Analog input capacitance Cs — — 15 pF Pin capacitance included Figure 2.64 Analog input resistance Rs — — 2.5 k Ω Figure 2.64 Offset error — ±0.5 ±4.5 LSB Full-scale error — ±0.75 ±4.5 LSB Quantization error — ±0.5 — LSB Absolute accuracy — ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential non-linearity error — ±1.0 — LSB INL integral non-linearity error — ±1.0 ±4.5 LSB

R01DS0342EJ0110 Rev.1.10 Page 83 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than A/D converter input are used. Absolute accuracy includes quantization errors. Offset error, full-scale error, DNL differential non-linearity error, and INL integral non-linearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time a nd the comparison time. As the test conditions, the number of sampling states is indicated. Table 2.50 A/D Conversion Characteristics (3) Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, 2.7 V ≤ VREFH0 ≤ AVCC0, reference voltage = VREFH0 selected, VSS = AVSS0 = VREFL0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Min. Typ. Max. Unit Test Conditions Frequency 1 — 27 MHz Resolution — — 12 Bit Conversion time*1 (Operation at PCLKD = 27 MHz) Permissible signal source impedance (Max.) = 1.1 kΩ 2 — — µs High-precision channel The ADCSR.ADHSC bit is 1 The ADSSTRn.SST[7:0] bits are 0Dh 3 — — Normal-precision channel The ADCSR.ADHSC bit is 1 The ADSSTRn.SST[7:0] bits are 28h Analog input capacitance Cs — — 15 pF Pin capacitance included Figure 2.64 Analog input resistance Rs — — 2.5 k Ω Figure 2.64 Offset error — ±0.5 ±4.5 LSB Full-scale error — ±0.75 ±4.5 LSB Quantization error — ±0.5 — LSB Absolute accuracy — ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential non-linearity error — ±1.0 — LSB INL integral non-linearity error — ±1.0 ±3.0 LSB

R01DS0342EJ0110 Rev.1.10 Page 84 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note: The characteristics apply when no pin functions other than A/D converter input are used. Absolute accuracy includes quantization errors. Offset error, full-scale error, DNL differential non-linearity error, and INL integral non-linearity error do not include quantization errors. Note 1. The conversion time is the sum of the sampling time a nd the comparison time. As the test conditions, the number of sampling states is indicated. Table 2.51 A/D Conversion Characteristics (4) Conditions: 2.4 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, 2.4 V ≤ VREFH0 ≤ AVCC0, VSS = AVSS0 = VSS_USB = 0 V, reference voltage = VREFH0 selected, T a = –40 to +85°C Item Min. Typ. Max. Unit Test Conditions Frequency 1 — 16 MHz Resolution — — 12 Bit Conversion time*1 (Operation at PCLKD = 16 MHz) Permissible signal source impedance (Max.) = 2.2 kΩ 3.38 — — µs High-precision channel The ADCSR.ADHSC bit is 1 The ADSSTRn register is 0Dh 5.06 — — Normal-precision channel The ADCSR.ADHSC bit is 1 The ADSSTRn register is 28h Analog input capacitance Cs — — 15 pF Pin capacitance included Figure 2.64 Analog input resistance Rs — — 2.5 k Ω Figure 2.64 Offset error — ±0.5 ±4.5 LSB Full-scale error — ±0.75 ±4.5 LSB Quantization error — ±0.5 — LSB Absolute accuracy — ±1.25 ±5.0 LSB High-precision channel ±8.0 LSB Other than above DNL differential non-linearity error — ±1.0 — LSB INL integral non-linearity error — ±1.0 ±3.0 LSB

R01DS0342EJ0110 Rev.1.10 Page 86 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.65 Illustration of A/D Converter Characteristic Terms Absolute accuracy Absolute accuracy is the difference between output code based on the theoretical A/D conversion characteristics and the actual A/D conversion result. When measuring absolute accuracy, the voltage at the midpoint of the width of analog input voltage (1-LSB width), that can meet the expectation of outputting an equal code based on the theoretical A/D conversion characteristics, is used as an analog input voltage. For example, if 12-bit resolution is used and if reference input voltages. If analog input voltage is 6 mV , absolute accuracy = ±5 LSB means that the actual A/D conversion result is in the range of 003h to 00Dh, although an output code, 008h, can be expected from the theoretical A/D conversion characteristics. Integral non-linearity error (INL) The integral non-linearity error is the maximum deviation between the ideal line when the measured offset and full-scale errors are zeroed, and the actual output code. Integral nonlinearity error (INL) Actual A/D conversion characteristic Ideal A/D conversion characteristic Analog input voltage Offset error Absolute accuracy Differential nonlinearity error (DNL) Full-scale error FFFh 000h Ideal line of actual A/D conversion characteristic 1-LSB width for ideal A/D conversion characteristic Differential nonlinearity error (DNL) 1-LSB width for ideal A/D conversion characteristic VREFH0 (full-scale) A/D converter output code

R01DS0342EJ0110 Rev.1.10 Page 87 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Differential non-linearity error (DNL) The differential non-linearity error is the difference between 1-LSB width based on the ideal A/D conversion characteristics and the width of the actual output code. Offset error An offset error is the difference between a transition point of the ideal first output code and the actual first output code. Full-scale error A full-scale error is the difference between a transition point of the ideal last output code and the actual last output code.

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2.6 D/A Conversion Characteristics

Table 2.54 D/A Conversion Characteristics (1) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C, Reference voltage = AVCC0 or AVSS0 selected Item Min. Typ. Max. Unit Test Conditions Resolution — — 12 Bit Resistive load 30 — — kΩ Capacitive load — — 50 pF Output voltage range 0.35 — AVCC0 - 0.47 V DNL differential non-linearity error — ±0.5 ±2.0 LSB INL integral non-linearity error — ±2.0 ±8.0 LSB Offset error — — ±30 mV Full-scale error — — ±30 mV Output resistance — 5 — Ω Conversion time — — 30 µs Table 2.55 D/A Conversion Characteristics (2) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C, Reference voltage = internal reference voltage selected Item Min. Typ. Max. Unit Test Conditions Resolution — — 12 Bit Internal reference voltage (Vbgr) 1.36 1.43 1.50 V Resistive load 30 — — kΩ Capacitive load — — 50 pF Output voltage range 0.35 — Vbgr V DNL differential non-linearity error — ±2.0 ±16.0 LSB INL integral non-linearity error — ±8.0 ±16.0 LSB Offset error — — 30 mV Output resistance — 5 — Ω Conversion time — — 30 µs

R01DS0342EJ0110 Rev.1.10 Page 89 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.66 Illustration of D/A Converter Characteristic Terms Integral non-linearity error (INL) The integral non-linearity error is the maximum deviation between the ideal line when the measured offset and full-scale errors are zeroed, and the actual output code. Differential non-linearity error (DNL) The differential non-linearity error is the difference between 1-LSB width based on the ideal D/A conversion characteristics and the width of the actually output code. Offset error An offset error is the difference between a transition point of the ideal first output code and the actual first output code. Full-scale error A full-scale error is the difference between a transition point of the ideal last output code and the actual last output code. 000h D/A converter input code FFFh Output analog voltage Upper output limit Lower output limit Offset error Ideal output voltage 1-LSB width for ideal D/A conversion characteristic Differential nonlinearity error (DNL) Actual D/A conversion characteristic Integral nonlinearity error (INL) Full-scale error Gain error Offset error Ideal output voltage Note 1. Ideal D/A conversion output voltage that is adjusted so that offset and full scale errors are zeroed.

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2.7 Temperature Sensor Characteristics

2.8 Comparator Characteristics

Table 2.56 Temperature Sensor Characteristics Conditions: 2.0 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Relative accuracy — — ±1.5 — °C 2.4 V or above — ±2.0 — Below 2.4 V Temperature slope — — –3.65 — mV/°C Output voltage (25°C) — — 1.05 — V VCC = 3.3 V Temperature sensor start time tSTART —— 5 µ s Sampling time — 5 — — µs Table 2.57 Comparator Characteristics Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions CVREFB2, CVREFB3 input reference voltage VREF 0 — VCC - 1.4 V CMPB2, CMPB3 input voltage VI –0.3 — VCC + 0.3 V Offset Comparator high-speed mode —— — 5 0 m V Comparator high-speed mode Window function enabled —— — 6 0 m V Comparator low-speed mode —— — 4 0 m V Comparator output delay time Comparator high-speed mode Td — — 1.2 µs VCC = 3 V, input slew rate ≥ 50 mV/µs Comparator high-speed mode Window function enabled Tdw — — 2.0 µs Comparator low-speed mode Td — — 5.0 µs High-side reference voltage (comparator high-speed mode, window function enabled) VRFH — 0.76 VCC — V Low-side reference voltage (comparator high-speed mode, window function enabled) VRFL — 0.24 VCC — V Operation stabilization wait time Tcmp 100 — — µs

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2.9 CTSU Characteristics

2.10 Characteristics of Power-On Rese t Circuit and Voltage Detection Circuit

Note: These characteristics apply when noise is not superimposed on the power supply. Note 1. n in the symbol Vdet0_n denotes the value of the OFS1.VDSEL[1:0] bits. Note 2. n in the symbol Vdet1_n denotes the value of the LVDLVLR.LVD1LVL[3:0] bits. Table 2.58 CTSU Characteristics Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions External capacitance connected to TSCAP pin C tscap 91 0 1 1 n F TS pin capacitive load C base — — 50 pF Permissible output high current IOH — — –24 mA When the mutual capacitance method is applied Table 2.59 Characteristics of Power-On Rese t Circuit and Voltage Detection Circuit (1) Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Voltage detection level Power-on reset (POR) V Voltage detection circuit (LVD0)*1 Vdet0_1 2.70 2.82 3.00 V Figure 2.71 At falling edge VCCVdet0_2 2.37 2.51 2.67 Vdet0_3 1.80 1.90 1.99 Voltage detection circuit (LVD1)* Vdet1_4 2.99 3.10 3.29 V Figure 2.72 At falling edge VCCVdet1_5 2.89 3.00 3.19 Vdet1_6 2.79 2.90 3.09 Vdet1_7 2.68 2.79 2.98 Vdet1_8 2.57 2.68 2.87 Vdet1_9 2.47 2.58 2.67 Vdet1_A 2.37 2.48 2.57 Vdet1_B 2.10 2.20 2.30 Vdet1_C 1.86 1.96 2.06 Vdet1_D 1.80 1.86 1.96

R01DS0342EJ0110 Rev.1.10 Page 93 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note: These characteristics apply when noise is not superimposed on the power supply. Note 1. When OFS1.(LVDAS, FASTSTUP) = 11b. Note 2. When OFS1.(LVDAS, FASTSTUP) ≠ 11b. Note 3. The minimum VCC down time indicates the time when VCC is below the minimum value of voltage detection levels VPOR, Vdet0, and Vdet1 for the POR/LVD. Figure 2.69 Voltage Detection Reset Timing Table 2.60 Characteristics of Power-On Rese t Circuit and Voltage Detection Circuit (2) Conditions: 1.8 V ≤ VCC0 = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Wait time after power-on reset cancellation At normal startup*1 tPOR — 9.1 — ms Figure 2.70 During fast startup time*2 tPOR —1 . 6— Wait time after voltage monitoring 0 reset cancellation Power-on voltage monitoring 0 reset disabled* tLVD0 — 568 — µs Figure 2.71 Power-on voltage monitoring 0 reset enabled*2 — 100 — Wait time after voltage monitoring 1 reset cancellation t LVD1 — 100 — µs Figure 2.72 Response delay time t det — — 350 µs Figure 2.69 Minimum VCC down time*3 tVOFF 350 — — µs Figure 2.69, VCC = 1.0 V or above Power-on reset enable time t W(POR) 1 — — ms Figure 2.70, VCC = below 1.0 V LVD operation stabilization time (after LVD is enabled) Td(E-A) — — 300 µs Figure 2.72 Hysteresis width (power-on rest (POR)) V PORH —1 1 0—m V Hysteresis width (voltage detection circuit: LVD1) V LVH — 70 — mV When Vdet1_4 is selected — 60 — When Vdet1_5 to Vdet1_9 is selected — 50 — When Vdet1_A or Vdet1_B is selected — 40 — When Vdet1_C or Vdet1_D is selected Internal reset signal (active-low) VCC tVOFF tPORtdet VPOR tdet 1.0V VPORH

R01DS0342EJ0110 Rev.1.10 Page 95 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Figure 2.72 Voltage Detection Circuit Timing (V det1)

2.11 Oscillation Stop Detection Timing

Figure 2.73 Oscillation Stop Detection Timing Table 2.61 Oscillation Stop Detection Timing Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VREFL0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Detection time tdr — — 1 ms Figure 2.73 tVOFF Vdet1VCC tdettdet tLVD1 Td(E-A) LVD1E LVD1 Comparator output LVD1CMPE LVD1MON Internal reset signal (active-low) When LVD1RN = L When LVD1RN = H VLVH tLVD1 tdr Main clock OSTDSR.OSTDF Low-speed clock ICLK tdr Main clock OSTDSR.OSTDF ICLKWhen the main clock is selected When the PLL clock is selected PLL clock Low-speed clock

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2.12 Battery Backup Function Characteristics

Note: The VCC-off period for starting power supply switching indicate s the period in which VCC is below the minimum value of the voltage level for switching to battery backup (VDETBATT). Figure 2.74 Battery Backup Function Characteristics Table 2.62 Battery Backup Function Characteristics Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, 1.8 V ≤ VBATT ≤ 3.6 V, VSS = AVSS0 = VREFL0 = VSS_USB = VSS_RF = 0 V, Ta = –40 to +85°C Item Symbol Min. Typ. Max. Unit Test Conditions Voltage level for switching to battery backup (falling) V DETBATT 1.99 2.09 2.19 V Figure 2.74 Hysteresis width V VBATTH —1 0 0—m V VCC-off period for starting power supply switching t VOFFBATT — — 350 µs Allowable voltage change rising/falling gradient dt/dVCC 1.0 — — ms/V Figure 2.7 Level for detection of voltage drop on the VBATT pin (falling) VBTLVDLVL[1:0] = 10b V DETBATLVD 2.11 2.20 2.29 V Figure 2.74 VBTLVDLVL[1:0] = 11b 1.87 2.00 2.13 V Hysteresis width for detection of voltage drop on the VBATT pin V BATLVDH —5 0— m V VCC VBATT Backup power supply area VCC supplied VCC suppliedVBATT supplied VDETBATT VCC voltage guaranteed range VBATT voltage guaranteed range tVOFFBATT VCC Cannot Be raised VVBATTH VDETBATLVD VBATLVDH

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2.13 ROM (Flash Memory for Code Storage) Characteristics

Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/ erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 4-byte programming is performed 256 times for different addresses in a 1-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is prohibited). Note 2. Characteristic when using the flash memory programmer and the self-programming library provided from Renesas Electronics. Note 3. This result is obtained from reliability testing. Note: The time until each operation of the flash memory is start ed after instructions are executed by software is not included. Note: The lower-limit frequency of FCLK is 1 MHz during programmi ng or erasing of the flash memory. When using FCLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note: The frequency accuracy of FCLK must be within ±3.5%. Table 2.63 ROM (Flash Memory for Code Storage) Characteristics (1) Item Symbol Min. Typ. Max. Unit Test Conditions Reprogramming/erasure cycle*1 NPEC 1000 — — Times Data hold time After 1000 times of N PEC tDRP 20*2, *3 — — Year T a = +85°C Table 2.64 ROM (Flash Memory for Code Storage) Characteristics (2) High-Speed Operating Mode Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = 0 V Temperature range for the programming/erasure operation: Ta = –40 to +85°C Item Symbol FCLK = 1 MHz FCLK = 32 MHz Unit Programming time 8-byte tP8 — 112 967 — 52.3 491 µs Erasure time 2-Kbyte t E2K — 8.75 278 — 5.50 215 ms 512-Kbyte (when block erase command is used) t E512K — 928 19218 — 72.0 1679 ms 512-Kbyte (when all- block erase command is used) t EA512K — 923 19013 — 66.7 1469 ms Blank check time 8-byte t BC8 — — 55.0 — — 16.1 µs 2-Kbyte t BC2K — — 1840 — — 136 ms Erase operation forced stop time t SED — — 18.0 — — 10.7 µs Start-up area switching setting time t SAS — 12.3 566.5 — 6.2 434 ms Access window time t AWS — 12.3 566.5 — 6.2 434 ms ROM mode transition wait time 1 t DIS 2.0 — — 2.0 — — µs ROM mode transition wait time 2 t MS 5.0 — — 5.0 — — µs

R01DS0342EJ0110 Rev.1.10 Page 98 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics Note: The time until each operation of the flash memory is start ed after instructions are executed by software is not included. Note: The lower-limit frequency of FCLK is 1 MHz during programmi ng or erasing of the flash memory. When using FCLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note: The frequency accuracy of FCLK must be within ±3.5%. Table 2.65 ROM (Flash Memory for Code Storage) Characteristics (3) Middle-Speed Operating Mode Conditions: 1.8 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB= VSS_RF = 0 V Temperature range for the programming/erasure operation: Ta = –40 to +85°C Item Symbol FCLK = 1 MHz FCLK = 8 MHz Unit Programming time 8-byte tP8 — 152 1367 — 97.9 936 µs Erasure time 2-Kbyte t E2K — 8.8 279.7 — 5.9 221 ms 512-Kbyte (when block erase command is used) t E512K — 928 19221 — 191 4108 ms 512-Kbyte (when all- block erase command is used) t EA512K — 923 19015 — 185 3901 ms Blank check time 8-byte t BC8 — — 85.0 — — 50.88 µs 2-Kbyte t BC2K — — 1870 — — 402 µs Erase operation forced stop time t SED — — 28.0 — — 21.3 µs Start-up area switching setting time t SAS — 13.0 573.3 — 7.7 451 ms Access window time t AWS — 13.0 573.3 — 7.7 451 ms ROM mode transition wait time 1 t DIS 2.0 — — 2.0 — — µs ROM mode transition wait time 2 t MS 3.0 — — 3.0 — — µs

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2.14 E2 DataFlash Characteristics (Flash Memory for Data Storage)

Note 1. The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000), erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1000 times for different addresses in a 1-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is prohibited). Note 2. Characteristic when the flash memory programmer is used and the self-programming library is provided from Renesas Electronics. Note 3. These results are obtai ned from reliability testing. Note: The time until each operation of the flash memory is start ed after instructions are executed by software is not included. Note: The lower-limit frequency of FCLK is 1 MHz during programmi ng or erasing of the flash memory. When using FCLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note: The frequency accuracy of FCLK must be within ±3.5%. Note: The time until each operation of the flash memory is start ed after instructions are executed by software is not included. Note: The lower-limit frequency of FCLK is 1 MHz during programmi ng or erasing of the flash memory. When using FCLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note: The frequency accuracy of FCLK must be within ±3.5%. Table 2.66 E2 DataFlash Characteristics (1) Item Symbol Min. Typ. Max. Unit Test Conditions Reprogramming/erasure cycle*1 NDPEC 100000 1000000 — Times Data hold time After 10000 times of N DPEC tDDRP 20*2, *3 — — Year T a = +85°C After 100000 times of NDPEC 5*2, *3 — — Year After 1000000 times of NDPEC —1 * 2, *3 — Year T a = +25°C Table 2.67 E2 DataFlash Characteristics (2): high-speed operating mode Conditions: 2.7 V ≤ VCC = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V Temperature range for the programming/erasure operation: Ta = –40 to +85°C Item Symbol FCLK = 1 MHz FCLK = 32 MHz Unit Programming time 1 byte tDP1 — 95.0 797 — 40.8 376 µs Erasure time 1 Kbyte t DE1K — 19.5 498 — 6.2 230 ms 8 Kbyte t DE8K — 119.8 2556 — 12.9 368 ms Blank check time 1 byte t DBC1 — — 55.00 — — 16.1 µs 1 Kbyte t DBC1K — — 0.72 — — 0.50 ms Erase operation forced stop time t DSED — — 16.0 — — 10.7 µs DataFlash STOP recovery time t DSTOP 5.0 — — 5.0 — — µs Table 2.68 E2 DataFlash Characteristics (3): middle-speed operating mode Conditions: 1.8 V ≤ VCC0 = VCC_USB = AVCC0 = VCC_RF = AVCC_RF ≤ 3.6 V, VSS = AVSS0 = VSS_USB = VSS_RF = 0 V Temperature range for the programming/erasure operation: Ta = –40 to +85°C Item Symbol FCLK = 1 MHz FCLK = 8 MHz Unit Programming time 1 byte tDP1 — 135 1197 — 86.5 823 µs Erasure time 1 Kbyte t DE1K — 19.6 501 — 8.0 265 ms 8 Kbyte t DE8K — 120 2558 — 27.7 669 ms Blank check time 1 byte t DBC1 — — 85.0 — — 50.9 µs 1 Kbyte t DBC1K — — 0.72 — — 1.45 ms Erase operation forced stop time t DSED — — 28.0 — — 21.3 µs DataFlash STOP recovery time t DSTOP 0.72 — — 0.72 — — µs

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2.15 BLE Characteristics

2.15.1 Transmission Characteristics

Note: The characteristics are based on pi ns and functions other than those for the BLE interface not being in use. Note 1. This does not take frequency errors due to manufacturing irregularities, drift with temperature, or deterioration of the crystal over time into account.

2.15.2 Reception Characteristics (2 Mbps)

Note: The characteristics are based on pi ns and functions other than those for the BLE interface not being in use. Note 1. PER ≤ 30.8%, and a 37-byte payload Note 2. Allowable range of difference between the center frequen cy for the RF input signals and the carrier frequency generated within the chip Table 2.69 Transmission Characteristics Conditions: VCC = VCC_RF = AVCC_RF = 3.3 V, VSS = VSS_RF = 0 V, T a = +25°C Item Symbol Min. Typ. Max. Unit Test Conditions Range of frequency RFCF 2402 — 2480 MHz Data rate RF DATA_2M — 2 — Mbps RFDATA_1M — 1 — Mbps RFDATA_500k — 500 — kbps RFDATA_125k — 125 — kbps Maximum transmitted output power RF POWER — 0 2 dBm 0 dBm output mode — 4 6 dBm 4 dBm output mode Output frequency error 85-pin BGA, 56-pin QFN RF TXFERR –10 — 10 ppm * 1 83-pin LGA RFMTXFERR –50 — 50 ppm T a: –40 to +85°C Table 2.70 Reception Characteristics Conditions: VCC = VCC_RF = AVCC_RF = 3.3 V, VSS = VSS_RF = 0 V, T a = +25°C Item Symbol Min. Typ. Max. Unit Test Conditions Input frequency RFRXFIN_2M 2402 — 2480 MHz Maximum input level RF LEVL_2M –10 4 — dBm * 1 Receiver sensitivity RFSTY_2M — –92 — dBm * 1 Secondary emission strength RF RXSP_2M — –72 –57 dBm 30 MHz to 1 GHz — –54 –47 dBm 1 GHz to 12 GHz Co-channel rejection ratio RF CCR_2M — –8 — dB Prf = –67 dBm* 1 Adjacent channel rejection ratio RFADCR_2M — 2 — dB Prf = –67 dBm* 1 ±2 MHz —3 5— d B ± 4 M H z —3 9— d B ± 6 M H z Blocking RF BLK_2M — –1 — dBm Prf = –67 dBm* 1 30 MHz to 2000 MHz — –25 — dBm 2000 MHz to 2399 MHz — –21 — dBm 2484 MHz to 3000 MHz — –10 — dBm > 3000 MHz Allowable frequency deviation* RFRXFER_2M –120 — 120 ppm * 1 RSSI accuracy RFRSSIS_2M — ±4 — dB –70 dBm ≤ Prf ≤ –10 dBm

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2.15.3 Reception Characteristics (1 Mbps)

Note: The characteristics are based on pi ns and functions other than those for the BLE interface not being in use. Note 1. PER ≤ 30.8%, and a 37-byte payload Note 2. Allowable range of difference between the center frequen cy for the RF input signals and the carrier frequency generated within the chip

2.15.4 Reception Characteristics (500 kbps)

Note: The characteristics are based on pi ns and functions other than those for the BLE interface not being in use. Note 1. PER ≤ 30.8%, and a 37-byte payload Note 2. Allowable range of difference between the center frequen cy for the RF input signals and the carrier frequency generated within the chip Table 2.71 Reception Characteristics Conditions: VCC = VCC_RF = AVCC_RF = 3.3 V, VSS = VSS_RF = 0 V, T a = +25°C Item Symbol Min. Typ. Max. Unit Test Conditions Input frequency RFRXFIN_1M 2402 — 2480 MHz Maximum input level RFLEVL_1M –10 4 — dBm * 1 Receiver sensitivity RFSTY_1M —– 9 5— d B m * 1 Secondary emission strength RF RXSP_1M — –72 –57 dBm 30MHz to 1GHz — –54 –47 dBm 1GHz to 12GHz Co-channel rejection ratio RF CCR_1M — –7 — dB Prf = –67dBm* 1 Adjacent channel rejection ratio RF ADCR_1M — –1 — dB Prf = –67dBm* 1 ±1MHz —3 4—d B ± 2 M H z —3 5—d B ± 3 M H z Blocking RFBLK_1M — 0 — dBm Prf = –67dBm* 1 30MHz to 2000MHz — –24 — dBm 2000MHz to 2399MHz — –20 — dBm 2484MHz to 3000MHz — –4 — dBm > 3000MHz Allowable frequency deviation*2 RFRXFER_1M –120 — 120 ppm * 1 RSSI accuracy RFRSSIS_1M — ±4 — dB –70dBm ≤ Prf ≤ –10dBm Table 2.72 Reception Characteristics Conditions: VCC = VCC_RF = AVCC_RF = 3.3 V, VSS = VSS_RF = 0 V, T a = +25°C Item Symbol Min. Typ. Max. Unit Test Conditions Input frequency RFRXFIN_500k 2402 — 2480 MHz Maximum input level RFLEVL_500k –10 4 — dBm * 1 Receiver sensitivity RFSTY_500k — –100 — dBm * 1 Secondary emission strength RF RXSP_500k — –72 –57 dBm 30MHz to 1GHz — –54 –47 dBm 1GHz to 12GHz Co-channel rejection ratio RF CCR_500k — –4 — dB Prf = –72dBm* 1 Adjacent channel rejection ratio RF ADCR_500k — 6 — dB Prf = –72dBm* 1 ±1MHz —3 6—d B ± 2 M H z —4 2—d B ± 3 M H z Blocking RFBLK_500k — 0 — dBm Prf = –72dBm* 1 30MHz to 2000MHz — –23 — dBm 2000MHz to 2399MHz — –20 — dBm 2484MHz to 3000MHz — –7 — dBm > 3000MHz Allowable frequency deviation*2 RFRXFER_500k –120 — 120 ppm * 1 RSSI accuracy RFRSSIS_500k — ±4 — dB –70dBm ≤ Prf ≤ –10dBm

R01DS0342EJ0110 Rev.1.10 Page 102 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics

2.15.5 Reception Characteristics (125 kbps)

Note: The characteristics are based on pi ns and functions other than those for the BLE interface not being in use. Note 1. PER ≤ 30.8%, and a 37-byte payload Note 2. Allowable range of difference between the center frequen cy for the RF input signals and the carrier frequency generated within the chip Table 2.73 Reception Characteristics Conditions: VCC = VCC_RF = AVCC_RF = 3.3 V, VSS = VSS_RF = 0 V, T a = +25°C Item Symbol Min. Typ. Max. Unit Test Conditions Input frequency RFRXFIN_125k 2402 — 2480 MHz Maximum input level RF LEVL_125k –10 4 — dBm * 1 Receiver sensitivity RFSTY_125k — –105 — dBm * 1 Secondary emission strength RF RXSP_125k — –72 –57 dBm 30 MHz to 1 GHz — –54 –47 dBm 1 GHz to 12 GHz Co-channel rejection ratio RF CCR_125k — –2 — dB Prf = –79 dBm* 1 Adjacent channel rejection ratio RF ADCR_125k — 12 — dB Prf = –79 dBm* 1 ±1 MHz —3 9— d B ± 2 M H z —4 5— d B ± 3 M H z Blocking RF BLK_125k — 0 — dBm Prf = –79 dBm* 1 30 MHz to 2000 MHz — –23 — dBm 2000 MHz to 2399 MHz — –20 — dBm 2484 MHz to 3000 MHz — –1 — dBm > 3000MHz Allowable frequency deviation*

2 RFRXFER_125k –120 — 120 ppm * 1

RSSI accuracy RFRSSIS_125k — ±4 — dB –70 dBm ≤ Prf ≤ –10 dBm

R01DS0342EJ0110 Rev.1.10 Page 103 of 109 Mar 30, 2021 RX23W Group 2. Electrical Characteristics

2.16 Usage Notes

2.16.1 Connecting VCL Capacitor and Bypass Capacitors

This MCU integrates an internal voltage-down circuit, which is used for lowering the power supply voltage in the internal MCU automatically to the optimum level. A 4.7-µF capacitor needs to be connected between this internal voltage-down power supply (VCL pin) and the VSS pin. Place an external capacitor close to the pins. Do not apply the power supply voltage to the VCL pin. Insert a multilayer ceramic capacitor as a bypass capacitor between each pair of the power supply pins. Implement a bypass capacitor as closer to the MCU power supply pins as possible. We recommend capacitors with a value of 2.2 µF for that connected to the VCC_RF pin and 0.1 µF for the others. For the capacitors related to crystal oscillation, see section 9, Clock Generation Circuit in the User’s Manual: Hardware. For the capacitors related to analog modules, also see section 44, 12-Bit A/D Converter (S12ADE) in the User’s Manual: Hardware. For notes on designing the printed circuit board, see the descriptions of the application note, the Hardware Design Guide (R01AN1411EJ). The latest version can be downloaded from the Renesas Electronics website.

R01DS0342EJ0110 Rev.1.10 Page 104 of 109 Mar 30, 2021 RX23W Group Appendix 1. Package Dimensions Appendix 1. Package Dimensions Information on the latest version of the package dimensions or mountings has been displayed in “Packages” on Renesas Electronics Corporation website. Figure A 85-Pin BGA (PTBG0085KB-A)

R01DS0342EJ0110 Rev.1.10 Page 105 of 109 Mar 30, 2021 RX23W Group Appendix 1. Package Dimensions Figure B 83-Pin LGA (PTLG0083KA-A) TOP VIEW SIDE VIEW BOTTOM VIEW 㻠㼤 SIDE VIEW D E A B aaa(4X) C 0.265 0.265 E1 e INDEX AREA Top Surface Sputter Side Wall Sputter 1.540e 1.250 L 1.170 b 㻠㼤 㻣㻠㼤 eee C A B fff C A C ddd C ccc C 1.000 1.000 11 12 13 14 15 16 17 18 19 20 21 40 39 38 37 36 35 34 33 32 48 49 50 51 52 53 54 55 56 72 71 70 69 68 67 66 65 64 73 74 75 80 81 Reference Symbol Dimension in Millimeters Min. Nom. Max. D 䠉 9.500 䠉 E 䠉 6.100 䠉 D1 䠉 4.000 䠉 E1 䠉 4.000 䠉 A 䠉䠉 1.009 b 䠉 0.250 䠉 b1 䠉 0.570 䠉 b2 䠉 0.660 䠉 L 䠉 0.410 䠉 L1 䠉 0.410 䠉 L2 䠉 0.590 䠉 e 䠉 0.500 䠉 aaa 䠉䠉 0.150 ccc 䠉䠉 0.200 ddd 䠉䠉 0.120 eee 䠉䠉 0.150 fff 䠉䠉 0.080 P-TFLGA83-6.1x9.5-0.50 PTLG0083KA-A 0.12

R01DS0342EJ0110 Rev.1.10 Page 106 of 109 Mar 30, 2021 RX23W Group Appendix 1. Package Dimensions Figure C 56-Pin QFN (PVQN0056LA-A)

R01DS0342EJ0110 Rev.1.10 Page 107 of 109 Mar 30, 2021 RX23W Group REVISION HISTORY Classifications - Items with Technical Update document number: Changes according to the corresponding issued Technical Update - Items without Technical Update document number: Minor changes that do not require Technical Update to be issued REVISION HISTORY RX23W Group Datasheet Rev. Date Description ClassificationPage Summary

1.00 Aug 06, 2019 — First edition, issued

1.10 Mar 30, 2021 Features

1 83-pin LGA specifications, added 1. Overview All 83-pin LGA spec ifications, added 2. Electrical Characteristics 49 Table 2.24 Clock Timing Note 6, changed TN-RX*-A0245A/E 58 to 78 2.3.5 Timing of On-Chi p Peripheral Modules, Layout changed Appendix 1. Package

105 Figure B 83-Pin HWQFN (PTLG0083KA-A), added

REVISION HISTORY

General Precautions in the Handling of Microprocessing Unit and Microcontroller Unit Products The following usage notes are applicable to all Microprocessing unit and Microcontroller unit products from Renesas. For detailed usage notes on the products covered by this document, refer to the relevant sections of the document as well as any technical updates that have been issued for the products. 1. Precaution against Electrostatic Discharge (ESD) A strong electrical field, when exposed to a CMOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop the generation of static electricity as much as possible, and quickly dissipate it when it occurs. Environmental control must be adequate. When it is dry, a humidifier should be used. This is recommended to avoid using insulators that can easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors must be grounded. The operator must also be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions must be taken for printed circuit boards with mounted semiconductor devices. 2. Processing at power-on The state of the product is undefined at the time when power is supplied. The states of internal circuits in the LSI are indeterminate and the states of register settings and pins are undefined at the time when power is supplied. In a finished product where the reset signal is a pplied to the external reset pin, the states of pins are not guaranteed from the time when power is supplied until the reset process is completed. In a similar way, the states of pins in a product that is reset by an on-chip power-on reset function are not guaranteed from the time when power is supplied until the power reaches the level at which resetting is specified. 3. Input of signal during power-off state Do not input signals or an I/O pull-up power supply while the device is powered off. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Follow the guideline for input signal during power-off state as described in your product documentation. 4. Handling of unused pins Handle unused pins in accordance with the directions given under handling of unused pins in the manual. The input pins of CMOS products are generally in the high-impedance state. In operation with an unused pin in the open-circuit state, extra electromagnetic noise is induced in the vicinity of the LSI, an associated shoot-through current flows internally, and malfunctions occur due to the false recognition of the pin state as an input signal become possible. 5. Clock signals After applying a reset, only release the reset line after the operating clock signal becomes stable. When switching the clock signal during program execution, wait until the target clock signal is stabilized. When the clock signal is generated with an external resonator or from an external oscillator during a reset, ensure that the reset line is only released after full stabilization of the clock signal. Additionally, when switching to a clock signal produced with an external resonator or by an external oscillator while program execution is in progress, wait until the target clock signal is stable. 6. Voltage application waveform at input pin Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (Max.) and VIH (Min.) due to noise, for example, the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (Max.) and VIH (Min.). 7. Prohibition of access to reserved addresses Access to reserved addresses is prohibited. The reserved addresses are provided for possible future expansion of functions. Do not access these addresses as the correct operation of the LSI is not guaranteed. 8. Differences between products Before changing from one product to another, for example to a product with a different part number, confirm that the change will not lead to problems. The characteristics of a microprocessing unit or microcontroller unit products in the same group but having a different part number might differ in terms of internal memory capacity, layout pattern, and other factors, which can affect the ranges of electrical characteristics, such as characteristic values, operating margins, immunity to noise, and amount of radiated noise. When changing to a product with a different part number, implement a system- evaluation test for the given product.

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