PTGH5065S1 PANJIT | Alldatasheet

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 Superior high speed switching IGBT  Low saturation voltage 1.65V at TVJ 25 oC  Co-packed with low Qrr and soft recovery diode  Maximum junction temperature TVJ 175 oC  Easy paralleling usage due to positive coefficient VCEsat  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-247-3L molded plastic  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 6.241 grams Application  UPS  PV Inverter  EV Charger  Welding machine  Home appliance Maximum Ratings PARAMETER SYMBOL LIMIT UNITS Collector-Emitter Voltage VCE 650 V Gate-Emitter Voltage VGE ± 20 V DC Collector Current @ TC = 25oC DC Collector Current @ TC = 100oC IC A Pulsed Collector Current, tP limited by TVJmax ICpulse 150 A Turn-off safe operating area VCC ≤ 400 V, VCE,peak < 650 V, VGE = 0/15 V, RGoff ≥ 10 Ω, TVJ ≤ 175 °C - 150 A Diode Forward Current @ TC = 25oC Diode Forward Current @ TC = 100oC IF A VCE VCEsat IC 650 V 50 A 1.65 V G C E EOFF 0.47 mJ

April 30,2024 PTGH5065S1-REV.00 Page 2 Typical Ratings Thermal Resistance PARAMETER SYMBOL LIMIT UNITS Pulsed Diode Current, tP limited by TVJmax IFpulse 150 A Power Dissipation @ TC = 25oC Power Dissipation @ TC = 100oC Ptotal 294 147 W Operating Junction Temperature Range TVJ -40 to +175 oC Storage Temperature Range TSTG -55 to +150 oC Soldering Temperature,1/8” from case for 5 seconds TSLD 260 oC PARAMETER SYMBOL TYP. UNITS Non−Repetitive Forward Surge Current (Half−Sine Pulse, tp = 8.3 ms, TC = 25°C) (Half−Sine Pulse, tp = 8.3 ms, TC = 150°C) IFM 350 295 A Internal emitter inductance measured 5mm(0.197 in.) from case LE 13 nH PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNITS Thermal Resistance Junction to Case, for IGBT RθJC - - 0.51 oC/W Thermal Resistance Junction to Case, for Diode RθJC - - 0.69 oC/W Thermal Resistance Junction to Ambient RθJA - - 40 oC/W

April 30,2024 PTGH5065S1-REV.00 Page 3 Electrical Characteristics (TVJ = 25 o C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Characteristic Collector-Emitter Breakdown Voltage V(BR)CES VGE = 0V, IC = 0.5mA 650 - - V Collector-Emitter Saturation Voltage VCEsat VGE = 15V, IC = 50A TVJ = 25 oC TVJ = 125 oC TVJ = 175 oC 1.65 1.85 2.00 2.25 V Gate-Emitter Threshold Voltage VGE(th) IC = 50mA, VCE = VGE 3.0 4.5 6.0 V Collector-Emitter Cut Off Current ICES VGE = 0V, VCE = 650V - - 100 μA Gate-Emitter Leakage Current IGES VGE = 20V, VCE = 0V - - 200 nA Transconductance gfs VCE = 20V, IC = 50A - 31 - S Dynamic Characteristic Input Capacitance Cies VCE = 25V, VGE = 0V f = 1MHz - 2276 - pF Output Capacitance Coes - 112 - Reverse Transfer Capacitance Cres - 16 - Gate Charge QG VCE = 520V, IC = 50A VGE = 15V - 74 - nC Switching Characteristic, Inductive Load Turn-On Delay Time td(on) TVJ = 25 oC VCC = 400V, IC = 25A VGE = 0 / 15V RG = 10Ω - 17 - ns Rise Time tr - 15 - ns Turn-Off Delay Time td(off) - 101 - ns Fall Time tf - 17 - ns Turn-On Energy Eon - 0.5 - mJ Turn-Off Energy Eoff - 0.11 - mJ Total Switching Energy Ets - 0.62 - mJ Turn-On Delay Time td(on) TVJ = 25 oC VCC = 400V, IC = 50A VGE = 0 / 15V RG = 10Ω - 19 - ns Rise Time tr - 36 - ns Turn-Off Delay Time td(off) - 99 - ns Fall Time tf - 38 - ns Turn-On Energy Eon - 1.35 - mJ Turn-Off Energy Eoff - 0.47 - mJ Total Switching Energy Ets - 1.81 - mJ

April 30,2024 PTGH5065S1-REV.00 Page 4 Turn-On Delay Time td(on) TVJ = 175oC VCC = 400V, IC = 25A VGE = 0 / 15V RG = 10Ω - 16 - ns Rise Time tr - 15 - ns Turn-Off Delay Time td(off) - 128 - ns Fall Time tf - 13 - ns Turn-On Energy Eon - 0.72 - mJ Turn-Off Energy Eoff - 0.19 - mJ Total Switching Energy Ets - 0.91 - mJ Turn-On Delay Time td(on) TVJ = 175oC VCC = 400V, IC = 50A VGE = 0 / 15V RG = 10Ω - 18 - ns Rise Time tr - 36 - ns Turn-Off Delay Time td(off) - 114 - ns Fall Time tf - 40 - ns Turn-On Energy Eon - 1.70 - mJ Turn-Off Energy Eoff - 0.55 - mJ Total Switching Energy Ets - 2.25 - mJ Diode Characteristic Diode Froward Voltage VF VGE = 0V, IF = 25A TVJ = 25 oC TVJ = 125 oC TVJ = 175 oC 1.62 1.35 1.21 V Reverse Recovery Time trr IF = 25 A, VR = 400 V, di/dt = 1000 A/μs, TVJ = 25 oC - 60 - ns Reverse Recovery Charge Qrr - 504 - nC Reverse Recovery Current Irrm - 15 - A Reverse Recovery Energy Erec - 58 - μJ Diode peak rate of fall of reverse recovery current dirr/dt - 395 - A/μs Reverse Recovery Time trr IF = 25 A, VR = 400 V, di/dt = 1000 A/μs, TVJ = 175 oC - 84 - ns Reverse Recovery Charge Qrr - 957 - nC Reverse Recovery Current Irrm - 20 - A Reverse Recovery Energy Erec - 144 - μJ Diode peak rate of fall of reverse recovery current dirr/dt - 432 - A/μs

April 30,2024 PTGH5065S1-REV.00 Page 5 Fig.2 Typical Output Characteristic (TVJ = 175oC) Fig.1 Typical Output Characteristic (TVJ = 25oC) Fig.4 VCEsat vs. TVJ Fig.3 Typical Transfer Characteristic (VCE = 20V) Fig.5 Typical Capacitance Fig.6 Typical Gate Charge 120 150 0 1 2 3 4 5 IC, Collector Current (A) VCE, Collector Emitter Voltage (V) VGE = 20 V 18 V 15 V 12 V 10 V 8 V 7 V 6 V 5 V 120 150 0 1 2 3 4 5 IC, Collector Current (A) VCE, Collector Emitter Voltage (V) VGE = 20 V 18 V 15 V 12 V 10 V 8 V 7 V 6 V 5 V 120 3 4 5 6 7 8 9 10 IC, Collector Current (A) VGE, Gate Emitter Voltage (V) TVJ = 25 ℃ TVJ = 175 ℃ 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 100 125 150 175 VCEsat, Collector Emitter Voltage (V) TVJ, Junction Temperature (℃) IC = 25A IC = 50A IC = 100A 100 1000 10000 0 5 10 15 20 25 Capacitance (pF) VCE, Collector Emitter Voltage (V) Ciss Coss Crss f = 1 MHz VGE = 0 V 0 10 20 30 40 50 60 70 80 VGE, Gate Emitter Voltage (V) QG, Gate Charge (nC) Qg(nC) IC = 50 A VCE = 520 V VCE = 130 V

April 30,2024 PTGH5065S1-REV.00 Page 6 Fig.8 Typical Switching Energy Loss vs. IC Fig.7 Typical Switching Time vs. IC Fig.10 Typical Switching Energy Loss vs. RG Fig.9 Typical Switching Time vs. RG Fig.11 Typical Switching Time vs. TVJ Fig.12 Typical Switching Energy Loss vs. TVJ 0 25 50 75 100 125 150 E, Switch Energy Loss (mJ) IC, Collector Current (A) Eoff Eon Ets TVJ = 175oC VCE = 400V VGE = 0/15V RG = 10Ω 100 1000 0 25 50 75 100 125 150 t, Switch Time (ns) IC, Collector Current (A) td(off) td(on) tr tf TVJ = 175oC VCE = 400V VGE = 0/15V RG = 10Ω 0.0 2.0 4.0 6.0 0 10 20 30 40 50 60 70 80 E, Switch Energy Loss (mJ) RG, Gate Resistor (Ω) Eoff Eon Ets TVJ = 175oC VCE = 400V VGE = 0/15V IC = 50A 100 1000 0 10 20 30 40 50 60 70 80 t, Switch Time (ns) RG, Gate Resistor (Ω) td(off) td(on) tf tr TVJ = 175oC VCE = 400V VGE = 0/15V IC = 50A 0.0 1.0 2.0 3.0 4.0 25 50 75 100 125 150 175 E, Switch Energy Loss (mJ) TVJ, Junction Temperature (oC) Eoff Eon Ets VCE = 400V VGE = 0/15V IC = 50A RG = 10Ω 100 1000 25 50 75 100 125 150 175 t, Switch Time (ns) TVJ, Junction Temperature (oC) td(off) td(on) tf tr VCE = 400V VGE = 0/15V IC = 50A RG = 10Ω

April 30,2024 PTGH5065S1-REV.00 Page 7 Fig.14 SOA Characteristic Fig.13 Typical Switching Energy Loss vs. VCE Fig.16 Diode Thermal Impedance Fig.15 IGBT Thermal Impedance Fig.17 Typical Diode Forward Characteristic Fig.18 Diode Forward Voltage vs. TVJ 200 250 300 350 400 450 500 E, Switch Energy Loss (mJ) VCE, Collector Emitter Voltage (V) Eoff Eon Ets TVJ = 175oC VGE = 0/15V IC = 50A RG = 10Ω 100 0 0.5 1 1.5 2 IF, Forward Current (A) VF, Forward Voltage (V) TVJ = 175 ℃ TVJ = 25 ℃ 0.7 0.9 1.1 0 25 50 75 100 125 150 175 200 Normalized VF-Forward Voltage (V) TVJ, Junction Temperature (oC) IF= 25, 50, 100 A 0.0001 0.001 0.01 0.1 ZthJC, Transient Thermal Resistance (K/W) tp, Pulse Width (s) D = 0.8 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.0001 0.001 0.01 0.1 ZthJC, Transient Thermal Resistance (K/W) tp, Pulse Width (s) D = 0.8 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 100 1 10 100 1000 IC, Collector Current (A) VCE, Collector Emitter Voltage (V) tp = 1μs 10μs 50μs 100μs 200μs 500μs DC Notes : 1.TC=25oC 2.TVJ=175oC 3.Single Pulse

April 30,2024 PTGH5065S1-REV.00 Page 8 Fig.20 Typical Reverse Recovery Time vs diF/dt Fig.19 Typical Diode Current Slope vs. RG Fig.22 Typical Reverse Recovery Current vs diF/dt Fig.21 Typical Reverse Recovery Charge vs diF/dt Fig.23 dIrr/dt vs. diF/dt Fig.24 Typical reverse energy losses vs. diF/dt 100 120 140 160 180 200 0 200 400 600 800 1000 1200 Trr, Reverse Recovery Time (ns) diF/dt, Diode Current Slope (A/μs) TVJ = 175 ℃ TVJ = 25 ℃ VR = 400V IF = 25A 200 400 600 800 1000 1200 0 40 80 120 160 200 240 diF/dt (A/us) RG, Gate Resistance(Ω) TVJ = 175oC TVJ = 25oC VR = 400V IF = 25A 0 200 400 600 800 1000 1200 Irr, Reverse Recovery Current (A) diF/dt, Diode Current Slope (A/μs) TVJ = 175oC TVJ = 25oC VR = 400V IF = 25A 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 Qrr, Reverse Recovery Charge (nC) diF/dt, Diode Current Slope (A/μs) VR = 400V IF = 25A TVJ = 175oC TVJ = 25oC 100 120 140 160 0 200 400 600 800 1000 1200 Erec (mJ) diF/dt, Diode Current Slope (A/μs) TVJ = 175oC TVJ = 25oC VR = 400V IF = 25A 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 dIrr/dt (A/us) diF/dt, Diode Current Slope (A/μs) TVJ = 175oC TVJ = 25oC VR = 400V IF = 25A

April 30,2024 PTGH5065S1-REV.00 Page 9 Fig.25 Gate-Emitter Threshold Voltage vs. TVJ 0.4 0.6 0.8 1.0 1.2 1.4 0 25 50 75 100 125 150 175 200 Normalized VGE(th)-Threshold Voltage (V) TVJ, Junction Temperature (oC) IC = 50 mA

April 30,2024 PTGH5065S1-REV.00 Page 10 Product and Packing Information Packaging Information Part No. Package Type Packing Type Marking PTGH5065S1 TO-247-3L 30pcs / Tube TGH5065S1 TO-247-3L Dimension Unit: inch(mm)

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