PTF240101S INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Features
- Pb-free and RoHS-compliant
- Typical CDMA2000 performance - Average output power = 2.0 W - Gain = 16 dB - Efficiency = 18% - ACPR = –55 dBc
- Typical CW performance - Output power at P–1dB = 15 W - Efficiency = 45%
- Integrated ESD protection: Human Body Model Class 1 (minimum)
- Excellent thermal stability
- Low HCI drift
- Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
Data Sheet 2 of 12 Rev. 05, 2007-04-12 RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) (cont.) VDD = 28 V, IDQ = 160 mA, ƒ = 2680 MHz, tone spacing = 7 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 14 15 — dB Efficiency at 1 W avg. η D 9 10 — % Intermodulation Distortion at 1 W avg. IMD — –42 –40 dBc Compression at 10 W avg. Pcomp — 0.3 1.0 dB Input Return Loss at 2.4 GHz IRL –10 –12 — dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 0.83 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 58 W Above 25°C derate by 0.333 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 10 W CW) Rθ JC 3.0 °C/W
Ordering Information
Type Package Outline Package Description Marking PTF240101S H-32259-2 Thermally-enhanced, surface mount PTF240101S
Data Sheet 3 of 12 Rev. 05, 2007-04-12 Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 180 mA, ƒ = 2680 MHz 28 33 38 43 Output Power (dBm) Gain (dB) Drain Efficiency (%) Efficiency Gain Broadband Performance VDD = 28 V, IDQ = 180 mA, POUT = 10 W 2600 2620 2640 2660 2680 2700 Frequency (MHz) Gain (dB), Efficiency (%) -25 -20 -15 -10 Return Loss (dB) Gain Return Loss Efficiency Typical Performance, CDMA2000 Operation (measurements taken in broadband test fixture) Gain vs. Output Power VDD = 28 V, ƒ = 2680 MHz 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 26 29 32 35 38 41 44 Output Power (dBm) Power Gain (dB) IDQ = 180 mA IDQ = 220 mA IDQ = 100 mA IS-95 CDMA Performance VDD = 28 V, I DQ = 180 mA, ƒ = 2680 MHz 29 31 33 35 37 39 41 Output Power (dBm), Avg. Drain Efficiency (%) -70 -65 -60 -55 -50 -45 -40 -35 -30 Adj. Ch. Power Ratio (dBc) Efficiency Adj Alt–1
Data Sheet 4 of 12 Rev. 05, 2007-04-12 0.1 0.2 0.1 0.3 0.2 - W AVELENGT <--- W AVELENGTHS TOW ARD LOAD - 0.0
2700 MHz
2400 MHz
G S D Z0 = 50 Ω Frequency Z Source W Z Load W MHz R jX R jX Typical Performance (cont.) Gate-Source Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 -20 0 20 40 60 80 100 Case Temperature (ºC) Normalized Bias Voltage 0.05 0.28 0.51 0.74 0.97 1.2 Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 180 mA, ƒ 1 = 2679 MHz, ƒ 2 = 2680 MHz -80 -70 -60 -50 -40 -30 -20 33 35 37 39 41 43 Output Power, PEP (dBm) IMD (dBc) 3rd Order 7th Order 5th Order Broadband Circuit Impedance Data
Data Sheet 5 of 12 Rev. 05, 2007-04-12Data Sheet 5 of 12 Rev. 05, 2007-04-12 CDMA2000 Reference Circuit Reference Circuit Schematic for ƒ = 2650 MHz 240101s_sch R32K V 2K V 0.001µF C20.001µF BCP56 1.3KV R1 1.2K V LM7805 0.001µF VDD QQ1 10V 4.7pF 10pF 0.5pF 1.4pF l1 l2 4.7pF C10 C11 0.6pF 5.1K 10 µF 35V 0.1µF 5.1K V DUT l 8l6 l 9 l11 4.7pF 0.4pF 0.5pF C15 C14 l12 C16 l13 4.7pF C12 10V l10 C13 100µF 50V VDD RF_IN RF_OUT Circuit Assembly Information DUT PTF240101S LDMOS Transistor Circuit Board 0.76 mm [0.030"] thick, εr = 4.5 Rogers TMM4, 2 oz. Copper Microstrip Electrical Characteristics at 2650 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)
Data Sheet 6 of 12 Rev. 05, 2007-04-12Data Sheet 6 of 12 Rev. 05, 2007-04-12 240101s_assy RF_IN RF_OUT LM10 35V+ VDD +VDD Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C6 Ceramic capacitor, 10 pF ATC 100B 100 C7, C10, C12, C16 Ceramic capacitor, 4.7 pF ATC 100B 4R7 C8 Ceramic capacitor, 1.4 pF ATC 100B 1R4 C9, C14 Ceramic capacitor, 0.5 pF ATC 100B 0R5 C11 Ceramic capacitor, 0.6 pF ATC 100A 0R6 C13 Tantalum capacitor, 100 µF, 50 V Digi-Key P5571-ND C15 Ceramic capacitor, 0.4 pF ATC 100B 0R4 Q1 Transistor Infineon BCP56 QQ1 Voltage Regulator National Semiconductor LM7805 R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND R3 Chip resistor, 2 k-ohms Digi-Key P2KECT-ND R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND R5, R8 Chip resistor, 10 ohms Digi-Key P10ECT-ND R6, R7 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND CDMA2000 Reference Circuit (cont.) Reference circuit assembly diagram (not to scale)* *Gerber files for this circuit are available upon request.
Data Sheet 7 of 12 Rev. 05, 2007-04-12Data Sheet 7 of 12 Rev. 05, 2007-04-12 RF Characteristics, WiMAX Operation WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 160 mA, POUT = 1 W, ƒ = 2400 MHz, 3.5 MHz bandwidth, 4 MHz sampling rate, 64 QAM 2/3 Characteristic Symbol Min Typ Max Unit Error Vector Magnitude EVM — –41 — dBc Gain Gps — 15.5 — dB Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 160 mA, POUT = 1 W avg., ƒ = 2300, 2400, 2500 MHz, tone spacing = 7 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 14.0 15.5 — dB Intermodulation Distortion IMD — –43 –40 dBc Drain Efficiency η D 9 10 — % Input Return Loss at 2.4 GHz IRL — –14 –10 dB Typical WiMAX Performance (measurements taken in broadband test fixture) WiMAX Performance VDD = 28 V, IDQ = 160 mA, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -43 -40 -37 -34 -31 -28 -25 20 22 24 26 28 30 Output Power (dBm) Error Vector Magnitude (dBc) 2.3Ghz 2.4Ghz 2.5Ghz WiMAX Performance VDD = 28 V, IDQ = 160 mA, ƒ = 2400 MHz, (modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz) -50 -45 -40 -35 -30 -25 20 22 24 26 28 30 Output Power (dBm) EVM (dB) t = +85 °C t = +25 °C t = –33 °C
Data Sheet 8 of 12 Rev. 05, 2007-04-12 Typical WiMAX Performance (cont.) See next page for WiMAX circuit information Gain vs. Output Power VDD = 24 V, ƒ = 2400 MHz 13.5 14.0 14.5 15.0 15.5 16.0 16.5 25 30 35 40 45 Output Power (dBm) Power Gain (dB) IDQ = 160 mA IDQ = 140 mA IDQ = 230 mA Two-tone Broadband Performance VDD = 28 V, IDQ = 160 mA, POUT = 1 W avg. (application circuit ACW1 covers 2.3 – 2.5 GHz) 2300 2350 2400 2450 2500 Frequency (MHz) Gain (dB), Efficiency (%) -50 -40 -30 -20 -10 Input Return Loss (dB) Gain Efficiency Return Loss IMD
Data Sheet 9 of 12 Rev. 05, 2007-04-12Data Sheet 9 of 12 Rev. 05, 2007-04-12 Circuit Assembly Information DUT PTF240101S LDMOS Transistor Circuit Board 0.76 mm [0.030"] thick, εr = 4.5 Rogers TMM4, 2 oz. Copper Microstrip Electrical Characteristics at 2500 MHz 1 Dimensions: L x W (mm) Dimensions: L x W (in.)
1 Electrical Characteristics are rounded
RF_IN RF_OUT 240101s_wimax_bd 2kV 0.001µF 0.001µF BCP56 1.3kV 1.2kV LM7805 0.001µF VDD QQ1 R42kV 6.8pF 8.2pF VDD l8 l9 l11 DUT C10 C12 C13 100µF 50V 1µF 0.6pF l1 l2 6.8pF l3 l4 5.1kV 10 µF 35V 0.1µF 8.2pF 1µF C11 l10l6 5.1kV 10V WiMAX reference circuit schematic ƒ = 2500 MHz WiMAX Reference Circuit
Data Sheet 10 of 12 Rev. 05, 2007-04-12Data Sheet 10 of 12 Rev. 05, 2007-04-12 Reference circuit assembly diagram (not to scale)* WiMAX Reference Circuit (cont.) *Gerber files for this circuit are available upon request. 240101s_wimax_assy RF_OUT LM RF_IN VDD VDD Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C6, C11 Ceramic capacitor, 0.01 µF Digi-Key PCC103BCT-ND C7, C10 Ceramic capacitor, 8.2 pF ATC 100B 8R2 C8 Ceramic capacitor, 0.6 pF ATC 100B 0R6 C9, C13 Ceramic capacitor, 6.8 pF ATC 100B 6R8 C12 Tantalum capacitor, 100 µF, 50 V Digi-Key P5571-ND C15 Ceramic capacitor, 0.4 pF ATC 100B 0R4 Q1 Transistor Infineon BCP56 QQ1 Voltage Regulator National Semiconductor LM7805 R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND R3 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND R4 Chip resistor, 2k ohms Digi-Key P2KECT-ND R5, R6 Chip resistor, 5.1k ohms Digi-Key P5.1KECT-ND R7 Chip resistor, 10 ohms Digi-Key P10ECT-ND
Data Sheet 11 of 12 Rev. 05, 2007-04-12Data Sheet 11 of 12 Rev. 05, 2007-04-12 Package Outline Specifications Package H-32259-2 Diagram Notes—unless otherwise specified: 2. All tolerances ± 0.127 [.005]. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 2.54 micron [100 microinch] (min). Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products CL CL CL H-32259-2-1-2307 2X 3.30 [.130] 1.02 [0.040] 0.51 [0.020] 2X 0.20±0.03 [.008±.001] 4X R0.25 [R.010] MAX. 0°-7° DRAFT ANGLE D S 10.16±0.25 [.400±.010] 6.86 [.270] 2X 1.65±0.51 [.065±.020] 2X 1.27 [.050] 2X 3.30 [.130] 4X 0.51 [.020] 4X 0.25 MAX [.010] 6.86 [.270] 6.48 [.255] SQ 0.74±0.05 [.028±.002] LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE .000±.002 (TYP) 1.78 [.070] 0.20±0.025 [.008±.001] 0.38 [.015] 6.35 [.250]SQ 7.37 [.290] REF 60° 2.88±.25 [.114±.01] G
Data Sheet 12 of 12 Rev. 05, 2007-04-12 GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2007-04-12 Published by Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2005. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTF240101S Confidential, Limited Internal Distribution Revision History: 2007-04-12 Data Sheet Previous Version: 2006-12-15, Data Sheet Page Subjects (major changes since last revision) 9, 10 Update and correct circuit diagrams and information We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International