PTF210451 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Internal matching for wideband performance
  • Typical two–carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 = –37 dBc
  • Typical CW performance - Output power at P–1dB = 50 W - Linear gain = 14 dB - Efficiency = 53%
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI Drift
  • Capable of handling 10:1 VSWR @ 28 V,

45 W (CW) output power

RF Performance at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Units Intermodulation Distortion IMD — –37 — dBc Gain Gps — 14 — dB Drain Efficiency ηD — 27 — % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps 13 14 — dB Drain Efficiency ηD 35 38 — % Intermodulation Distortion IMD — –32 –30 dBc PTF210451 ESD: Electrostatic discharge sensitive device — observe handling precautions!

DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, ID = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.2 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 500 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 175 W Above 25°C derate by 1.0 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 45 W CW) RθJC 1.0 °C/W Typical Performance (data taken in production test fixture) Broadband Performance VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm 2070 2105 2140 2175 2210 Frequency (MHz) Gain (dB), Efficiency (%) -30 -25 -20 -15 -10 Input Return Loss (dB)Input Retrun Loss Gain Efficiency Power Sweep, CW Conditions VDD = 28 V, IDQ = 500 mA, f = 2170 MHz 34 36 38 40 42 44 46 48 Output Power (dBm) Gain (dB) Drain Efficiency (%) Efficiency Gain

Typical Performance (cont.) Intermodulation Distortion vs. Output Power for selected currents VDD = 28 V, f = 2140 MHz, tone spacing = 1 MHz -60 -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 48 Output Power, PEP (dBm) IMD (dBc) 0.40 A 0.60 A 0.45 A 0.55 A0.50 A Intermodulation Distortion Products vs. Tone Spacing VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, POUT = 45 W PEP -60 -55 -50 -45 -40 -35 -30 -25 0 10 20 30 40 Tone Spacing (MHz) IMD (dBc) 3rd Order 7th Order 5th Order Two–Tone Drive–Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, tone spacing = 1MHz -65 -60 -55 -50 -45 -40 -35 -30 -25 34 36 38 40 42 44 46 48 Peak Output Power (dBm) IMD (dBc) Drain Efficiency (%) Efficiency IM3 IM7 IM5 Single–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 500 mA, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW -60 -55 -50 -45 -40 -35 30 32 34 36 38 40 42 Avgerage Output Power (dBm) ACPR (dB) Drain Efficiency (%) Efficiency ACPR Low ACPR Up

0.1 0.3 0.2 0.1 0.1 0.3 0.2 - W AVELENGTHS TOW ARD GENER <--- W AVELENGTHS TOW ARD LOAD - 0.0

2210 MHz

2070 MHz

G S D Broadband Circuit Impedance Data Frequency Z Source Ω Z Load Ω MHz R jX R jX 2070 5.72 -9.36 4.94 -0.87 2110 5.17 -8.97 4.90 -0.69 2140 4.88 -8.52 4.96 -0.60 2170 4.59 -8.16 4.96 -0.49 2210 4.08 -7.79 4.88 -0.39 Z0 = 50 Ω IM3, Gain & Drain Efficiency vs. Supply Voltage IDQ = 500 mA, f = 2140 MHz, POUT = 44.75 dBm (PEP), Tone Spacing = 1 MHz -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 Supply Voltage (V) Gain Efficiency IM3 Up 3rd Order IMD (dBc) Gain (dB), Drain Efficiency (%) Typical Performance (cont.) Bias Voltage vs. Case Temperature Voltage normalized to typical gate voltage. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 5 30 55 80 105 Case Temperature (ºC) Normalized Bias Voltage 4.50 A 3.75 A 3.00 A 2.25 A 1.50 A 0.75 A Series show current.

Test Circuit Schematic for 2170 MHz Circuit Assembly Information DUT PTF210451E LDMOS Transistor Microstrip Electrical Characteristics at 2170 MHz Dimensions: L x W (mm.) Dimensions: L x W (in.) 210451E SCHEMATIC DWG FOR DATA SHEET.dwg

Test Circuit (cont.) Reference Circuit1 (not to scale) Component Description Manufacturer P/N or Comment C1 Capacitor, 10 µF, 35 V, Tantalum TE, SMD Digi-Key PCS6106TR-ND C2, C8 Capacitor, 0.01 µF ATC X08J103AFB ATC 200B103MW C3, C7 Capacitor, 1 µF ATC X24L105BVC C4, C6 Capacitor, 7.5 pF ATC 100B 7R5 C5, C9 Capacitor, 10 pF ATC 100A 100 L1 Ferrite Bead Elne Magnetic #BDS31314.6-452 R1, R2 Resistor, 3.3K ohm, 1/4 W Digi-Key P3.3K ECT-ND R3 Resistor, 10 ohm, 1/4 W Digi-Key P10 ECT-ND

1 Gerber files for this circuit available on request

210451E ASSEMBLY DWG FOR DATA SHEET.dwg

Ordering Information

Type Package Outline Package Description Marking PTF210451E 30265 Thermally enhanced, flange PTF210451E Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate. Package Outline Specifications Package 30265 20.31 [.800] 10.16±0.25 [.400±.010] 2X 2.59±0.38 [.107 ±.015] FLANGE 9.78 [.385] 2x 7.11 [.280] 7.11 [.280] 15.23 [.600] 4x 1.52 [.060] CL CL (45° X 2.03 [.080]) S D G 2X R1.60 [.063] LID 10.16±0.25 [.400±.010] 0.0381 [.0015] -A- 3.48±0.38 [.137±.015] 1.02 [.040] 0.51 [.020] SPH 1.57 [.062] 15.60±0.51 [.614±.020] 30265-2303-mec Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products

Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München, Germany

© Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International PTF210451 Revision History: 2003-12-22 Data Sheet Previous Version: none Page Subjects (major changes since last revision)