PTF210301 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal matching
  • Typical two–carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc
  • Typical CW performance - Output power at P–1dB = 36 W - Gain = 15 dB - Efficiency = 53%
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

30 W (CW) output power

RF Characteristics at TCASE = 25°C unless otherwise indicated WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture ) VDD = 28 V, IDQ = 380 mA, POUT = 36.5 dBm f1 = 2140 MHz, f2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Units Intermodulation Distortion IMD — –44 — dBc Gain Gps — 16 — dB Drain Efficiency hD — 20 — % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 380 mA, P OUT = 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps 14.5 16 — dB Drain Efficiency ηD 15 18 — % Intermodulation Distortion IMD — –47 –42 dBc LDMOS RF Power Field Effect Transistor

30 W, 2110–2170 MHz

Two–Carrier WCDMA Drive–Up f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,

10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA

-55 -50 -45 -40 -35 -30 -25 30 32 34 36 38 40 Average Output Power (dBm) IM3 (dBc), ACPR (dBc) Drain Efficiency (%) ACPR Efficiency IM3 ESD: Electrostatic discharge sensitive device — observe handling precautions!

DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.26 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 380 mA VGS 2.5 3.2 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PTF210301A PD 116 W Above 25°C derate by 0.67 W/°C Total Device Dissipation PTF210301E PD 145 W Above 25°C derate by 0.83 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance PTF210301A RθJC 1.5 °C/W (TCASE = 70°C, 30 W CW) PTF210301E RθJC 1.2 °C/W Broadband Performance VDD = 28 V, IDQ = 380 mA, P OUT = 39.5 dBm 2070 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) Gain (dB), Efficiency (%) -25 -20 -15 -10 Input Return Loss (dB)Gain Efficiency Return Loss Power Sweep, CW Conditions VDD = 28 V, IDQ = 380 mA, f = 2170 MHz 0 10 20 30 40 Output Power (W) Gain (dB) Drain Efficiency (%) Gain Efficiency Typical Performance (data taken in a production test fixture)

Single–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 380 mA, f = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% Clipping, P/A R = 8.7 dB, 3.84 MHz BW -60 -55 -50 -45 -40 -35 28 32 36 40 Average Output Power (dBm) Adjacent Channel Power Ratio (dB) Drain Efficiency (%)ACPR Low Efficiency ACPR Up Two–Tone Drive–Up at Optimum I DQ VDD = 28 V, IDQ = 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 32 36 40 44 48 Output Power, PEP (dBm) Drain Efficiency (%) IM5 Efficiency IM7 IM3 Intermodulation Distortion (dBc) Intermodulation Distortion Products vs. Tone Spacing VDD = 28V IDQ = 380 mA, f = 2140 MHz, Output Power = 44.75 dBm PEP -60 -55 -50 -45 -40 -35 -30 -25 -5 5 15 25 35 Tone Spacing (MHz) Intermodulation Distortion (dBc) 3rd Order 5th 7th -60 -55 -50 -45 -40 -35 -30 -25 32 34 36 38 40 42 44 46 Output Power, PEP (dBm) 3rd Order IMD (dBc) Intermodulation Distortion vs. Output Power VDD = 28 V, f = 2140 MHz, Tone Spacing = 1 MHz 300 mA 380 mA 420 mA 455 mA 345 mA Typical Performance (cont.)

Broadband Circuit Impedance Data IM3, Drain Efficiency and Gain vs. Supply Voltage -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 Supply Voltage (V) 3rd Order Intermodulation Distortion (dBc) Gain (dB), Drain Efficiency (%) Gain Efficiency IM3 Up IDQ = 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz, Output Power (PEP) = 44.75 dBm 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 20 60 100 Case Temperature (°C) Normalized Bias Voltage 0.20 0.77 1.33 1.90 2.47 3.03 Gate-Source Voltage vs. Case Temperature Voltage normalized to typical gate voltage. Typical Performance (cont.) Z Source Z Load G S D Frequency Z Source Ω Z Load Ω MHz R jX R jX 0.1 0.3 0.5 0.2 0.4 0.1 0.1 0.2 O <--- W AVELENGTHS TOW ARD LOAD - 0.0

2210 MHz

2070 MHz

2070 MHzZ Load

Z0 = 50 Ω Series show current.

Test Circit Schematic for f = 2170 MHz Test Circuit ERS210301-1 DUT PTF210301 LDMOS Transistor Microstrip Electrical Characteristics at 2170 MHz Dimensions: W x L (mm.) Dimensions: W xL (in.)

Test Circuit (cont.) Component Description Manufacturer P/N or Comment C1, C9 10 µF, 35 V Capacitor Digi-Key PC56106 C2, C7, C10 Capacitor, 0.1 µF, 50 V Digi-Key PCC103BCT-ND C3, C6 Capacitor, 11 pF ATC 100A 110 C4, C11 Capacitor, 33 pF ATC 100A 330 C5 Capacitor, 2.1 pF ATC 100A 2R1 C8 Capacitor, 100 µF, 50 V Digi-Key P5182-ND C12 Capacitor, 0.8 pF ATC 100A 0R8 L1 Ferrite, 6 mm Philips 53/3/4.6-452 R1, R2 Chip Resistor, 100 Ω , 1/8 W 1206 Digi-Key 101ECT-ND Reference Circuit1 (not to scale)

1 Gerber Files for this circuit available on request

210301_2 for datasheet_1.DWG

Ordering Information

Type Package Outline Package Description Marking PTF210301A 20265 Standard ceramic, flange PTF210301A PTF210301E 30265 Thermally enhanced, flange PTF210301E Package Outline Specifications Package 20265, Package 30265 Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products 20.31 [.800] 10.16±0.25 [.400±.010] 2X 2.59±0.38 [.107 ±.015] FLANGE 9.78 [.385] 2x 7.11 [.280] 7.11 [.280] 15.23 [.600] 4x 1.52 [.060] CL CL (45° X 2.03 [.080]) S D G 2X R1.60 [.063] LID 10.16±0.25 [.400±.010] 0.0381 [.0015] -A- 3.48±0.38 [.137±.015] 1.02 [.040] 0.51 [.020] SPH 1.57 [.062] 15.60±0.51 [.614±.020] ERA-H-30265-2-1-2303 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate.

Revision History: 2003-12-22 Data Sheet Previous Version: 2003-11-06, Data Sheet Page Subjects (major changes since last revision) Combine PTF210301E and PTF210301A onto this Data Sheet.

7 Update Package Outline

Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München, Germany

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