PTF210101M INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Typical WCDMA performance - Average output power = 2.0 W - Gain = 15 dB - Efficiency = 20% - ACPR = –45 dB
  • Typical CW performance - Output Power at P–1dB = 10 W - Gain = 14 dB - Efficiency = 50%
  • Integrated ESD protection: Human Body Model Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

  • Pb-free and RoHS compliant

Data Sheet 2 of 8 Rev. 02.1, 2009-02-18 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 0.83 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 150 °C Total Device Dissipation PD 19 W Above 25°C derate by 0.15 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 10 W DC ) Rθ JC 6.5 °C/W

Ordering Information

Type Package Outline Package Description Marking PTF210101M PG-RFP-10 Molded plastic, SMD 0211 *See Infineon distributor for future availability.

Data Sheet 3 of 8 Rev. 02.1, 2009-02-18 Typical Performance (data taken in production test fixture) Power Sweep, CW Conditions VDD = 28 V, IDQ = 180 mA, ƒ = 2170 MHz 15 20 25 30 35 40 45 Output Power (dBm) Gain (dB) Drain Efficiency (%) Gain Efficiency Two-Tone Drive-up VDD = 28 V, IDQ = 180 mA, ƒ 1 = 2169, ƒ 2 = 2170 MHz -80 -70 -60 -50 -40 -30 -20 26 28 30 32 34 36 38 40 42 Output Power, PEP (dBm) Intermodulation Distortion (dBc) IM5 IM7 IM3 Two-Tone Power Sweep VDD = 28 V, IDQ = 180 mA, ƒ 1 = 2169, ƒ 2 = 2170 MHz 26 28 30 32 34 36 38 40 42 Output Power, PEP (dBm) Gain (dB) Efficiency (%) Gain Efficiency Broadband Performance VDD = 28 V, IDQ = 180 mA, POUT = 41 dBm 2100 2120 2140 2160 2180 Frequency (MHz) Gain (dB), Efficiency (%) -16 -15 -14 -13 -12 -11 -10 Input Return Loss (dB) Gain Efficiency Return Loss

Data Sheet 4 of 8 Rev. 02.1, 2009-02-18 Typical Performance (cont.) Z Source Z Load G S D Broadband Circuit Impedance Frequency Z Source W Z Load W MHz R jX R jX Voltage Sweep IDQ = 180 mA, ƒ = 2110 MHz 20 22 24 26 28 30 32 34 Supply Voltage (V) Output Power (dBm) Gate-Source Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 -20 0 20 40 60 80 100 Case Temperature (ºC) Normalized Bias Voltage 0.05 A 0.28 A 0.51 A 0.74 A 0.97 A 1.20 A

Data Sheet 5 of 8 Rev. 02.1, 2009-02-18 210101m_sch R3 R4 0.001µF 0.001µF BCP56 1.3K V 1.2K V LM7805 0.001µF QQ1 10µF 35V 0.1µF 10 µF 35V C4 R7 10pF 10V 1K V l8 220V 10pF10pF 1.2pF l1 l10 l13 DUT RF_IN C16 RF_OUT C10 1.4pF l2 l3 l4 l5 l6 C11 2.4pF 10pF 0.1µF 10µF 50V 1µF VDD l11 C12 C13 C14 C15 l12 2KV220V 10V VDD Reference Circuit Reference circuit schematic for ƒ = 2170 MHz Circuit Assembly Information DUT PTF210101M LDMOS Transistor PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers 4350 1 oz. copper Microstrip Electrical Characteristics at 2170 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) 1Electrical characteristics are rounded.

Data Sheet 6 of 8 Rev. 02.1, 2009-02-18 QQ1C3 C1 C2R2 C8 C9 C10 C11 C16 C13 C14C12R6 R7 210101M_C_02 210101m_assy RF_IN RF_OUT LM10 35V+ VDD 35V+ Q1 C15 Reference Circuit (cont.) Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND C4, C6 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND C5, C13 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND C7, C9, C12, C16 Ceramic capacitor, 10 pF ATC 100B 100 C8 Ceramic capacitor, 1.2 pF ATC 100B 1R2 C10 Ceramic capacitor, 1.4 pF ATC 100B 1R4 C11 Ceramic capacitor, 2.4 pF ATC 100B 2R4 C14 Capacitor, 1.0 µF ATC 920C105 C15 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400 Q1 Transistor Infineon Technologies BCP56 QQ1 Voltage regulator National Semiconductor LM7805 R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND R3, R8 Chip Resistor 220 ohms Digi-Key P221ECT-ND R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND R5, R6 Chip Resistor 10 ohms Digi-Key P10ECT-ND R7 Chip Resistor 1 k-ohms Digi-Key P1KECT-ND *Gerber Files for this circuit available on request

Data Sheet 7 of 8 Rev. 02.1, 2009-02-18 Diagram Notes—unless otherwise specified: 1. All tolerances ± 0.127 [.005] unless specified otherwise. 2. Dimensions are mm 3. Lead thickness: 0.09 4. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain Package Outline Specifications Package PG-RFP-10 (TSSOP-10 Outline) Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products M PG-RFP-10 0.85 ±0.1 0.09 3 ±0.1 0.42 0.125 6° MAX. H 0.1 A 4.9

0.25 A B C

0.08 M 0.22 ±0.05 0.15 MAX. 1.1 MAX. A C 0.5 10 6 3 ±0.1 B Index marking A B C +0.15 –0.10 +0.08 –0.05

Data Sheet 8 of 8 Rev. 02.1, 2009-02-18 PTF210101M Confidential—Limited Distribution Revision History: 2009-02-18 Data Sheet Previous version: 2005-12-05, Data Sheet Page Subjects (major changes since last revision)

6 Fixed typing error

1 Revise package information and photo

We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-02-18 Published by Infineon Technologies AG

81726 Munich, Germany

© 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com/rfpower ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.