PTF080101 INFINEON | Alldatasheet

Document overview

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Technical content

Features

  • Broadband internal matching
  • Typical EDGE performance - Average output power = 4.0 W - Gain = 19 dB - Efficiency = 31%
  • Typical CW performance - Output power at P–1dB = 13 W - Gain = 18 dB - Efficiency = 55%
  • Integrated ESD protection: Human Body Model, Class 1 (minimum)
  • Excellent thermal stability
  • Low HCI drift
  • Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Description

The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metalliza- tion ensures excellent device lifetime and reliability. PTF080101S Package 32259 RF Characteristics at TCASE = 25°C unless otherwise indicated EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture ) VDD = 28 V, IDQ = 150 mA, POUT = 4.0 W, f = 959.8 MHz Characteristic Symbol Min Typ Max Units Error Vector Magnitude EVM (RMS) — 1.3 — % Modulation Spectrum @ 400 kHz ACPR — –61 — dBc Modulation Spectrum @ 600 kHz ACPR — –75 — dBc Gain Gps — 19 — dB Drain Efficiency ηD — 31 — % Two–Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 150 mA, POUT = 10 W PEP, f = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Units Gain Gps — 19 — dB Drain Efficiency ηD — 37 — % Intermodulation Distortion IMD — –32 — dBc

Developmental Data Sheet 2 2004-03-08 Advance Information PTF080101 DC Characteristics at TCASE = 25°C unless otherwise indicated Characteristic Conditions Symbol Min Typ Max Units Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On–State Resistance VGS = 10 V, I DS = 0.1 A RDS(on) — 0.83 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 150 mA VGS — 3.2 — V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain–Source Voltage VDSS 65 V Gate–Source Voltage VGS –0.5 to +12 V Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 58 W Above 25°C derate by 0.333 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C), ws1 W CW) RθJC 3.0 °C/W

Developmental Data Sheet 3 2004-03-08 Advance Information PTF080101

Ordering Information

Type Package Outline Package Description Marking PTF080101S 32259 Thermally enhanced, surface mount PTF080101S Package Outline Specifications Package 32259 Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products 2X 3.30 [.130] 1.02 [0.040] 0.51 [0.020] 2X 0.20±0.03 [.008±.001] 4X R0.25 [R.010] MAX. CL LC 0°-7° DRAFT ANGLE D G S 10.16±0.25 [.400±.010] 6.86 [.270] 2X 1.65±0.51 [.065±.020] 2X 1.27 [.050] 2X 3.30 [.130] 4X 0.51 [.020] 4X 0.25 MAX [.010] 6.35 [.250] SQ 6.86 [.270] 6.48 [.255] SQ 0.74±0.05 [.028±.002] 1.78 [.070] 2.99 ±0.38 [1.14 ±.010] H-32259-2-1-2307 LEAD COPLANARITY BOTTOM OF LEAD TO BOTTOM OF PACKAGE .000±.002 (TYP) 60° X 6.60 [60° X .260]

GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2004-03-08 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

81669 München, Germany

© Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non–infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life–support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life–support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International PTF080101 Confidential Revision History: 2004-03-08 Developmental Data Sheet Previous Version: none Page Subjects (major changes since last revision)