PTB23006U PHILIPS | Alldatasheet
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 12
Technical content
Preliminary specification Supersedes data of December 1994
1997 Feb 19
Microwave power transistor
1997 Feb 19 2
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U
FEATURES
- Very high power gain
- Diffused emitter ballasting resistors improve ruggedness
- Interdigitated emitter-base structure
- Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
- Multicell geometry improves power sharing and reduces thermal resistance
- Internal input prematching network.
APPLICATIONS
Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. QUICK REFERENCE DATA Microwave performance up to T mb =2 5°C in a common-base class C narrowband amplifier. MODE OF OPERATION f (GHz) VCC (V) PL (W) G p (dB) ηC (%) Zi; ZL (Ω ) Class C (CW) 2 28 >5 >9 >40 see Figs 5 and 6 PINNING - SOT440A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange Fig.1 Simplified outline and symbol. handbook, 4 columns e c b MAM131 Top view WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19 3
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Up to 0.2 mm from ceramic. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCES collector-emitter voltage R BE =0 − 40 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3V IC collector current − 0.75 A Ptot total power dissipation T mb =7 5°C − 11 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature t ≤ 10 s; note 1 − 235 °C Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 MLC461 150 T ( C)o mb P tot (W)
1997 Feb 19 4
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U THERMAL CHARACTERISTICS Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb =2 5°C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to Tmb =2 5°C in a common-base class C test circuit. SYMBOL PARAMETER CONDITIONS MAX. UNIT R th j-mb thermal resistance from junction to mounting base Tj=7 5°C 8.5 K/W R th mb-h thermal resistance from mounting base to heatsink note 1 0.7 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICES collector cut-off current I E = 0; VCE =3 0V − 300 µA V(BR)CBO collector-base breakdown voltage IC = 3 mA; IE =0 4 0 − V V(BR)CES collector-emitter breakdown voltage IC = 3 mA; RBE =0 4 0 − V V(BR)EBO emitter-base breakdown voltage IC = 1.5 mA 3 − V hFE DC current gain I C = 450 mA; VCE = 3 V 15 150 MODE OF OPERATION f (GHz) VCE (V) PL (W) G p (dB) ηC (%) Zi; ZL (Ω ) class C (CW) 2 28 >5 typ. 5.8 typ. 10.5 >40 typ. 45 see Figs 5 and 6
1997 Feb 19 5
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U Fig.3 Prematching test circuit. Dimensions in mm. Substrate: PTFE fibreglass. Thickness: 0.8 mm. Permittivity:ε r = 2.54. handbook, full pagewidth MLC718 30 30 40 40 10 5 5 210 4 2.24 1.4 5.5 2.24 1.75.25 3.5 handbook, full pagewidth MLC719 VCC input output
1997 Feb 19 6
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U List of components(see Fig.3) COMPONENT DESCRIPTION VALUE ORDERING INFORMATION C1 feedthrough bypass capacitor Erie1250-003 C2 DC blocking chip capacitor 100 pF C3 tuning capacitor 0.5 to 5 pF Tekelec 5855 L1, L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm Fig.4 Load power as a function of input power. handbook, halfpage 100 PL (W) 200 400 MGA244 300 Pi (mW)
1997 Feb 19 7
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j MCD615 0.5 10.2 10 52
2.3 GHz
Fig.5 Input impedance as a function of frequency. VCC = 28 V; Zo =5 0Ω ; PL = 2.3 W. handbook, full pagewidth 0.2 0.5 0.2 0.5 + j – j 100.5 10.2 5 2 Fig.6 Optimum load impedance as a function of frequency. VCC = 28 V; Zo =5 0Ω ; PL = 2.3 W.
1997 Feb 19 8
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U PACKAGE OUTLINE Fig.7 SOT440A. handbook, full pagewidth MBC888 O 0.25 M (1)3.4 3.2 2.9 2.0 7.1 14.2 5.1 5.5 max 4.5 min 4.5 min 0.25 M1.0 0.1 3.45 2.90 20.5 max seating plane 1.7 max 4.5 max Dimensions in mm. Torque on nut: max. 0.4 Nm. Recommended screw: M2.5. (1) Flatness of this area ensures full thermal contact with bolt head.
1997 Feb 19 9
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.
1997 Feb 19 10
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U NOTES
1997 Feb 19 11
Philips Semiconductors Preliminary specification Microwave power transistor PTB23006U NOTES
Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 19 Document order number: 9397 750 01779